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Tuesday, August 12 • 08:30 - 10:30
Electron Devices & Applications I

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Invited: Dennis M. Newns
The Piezoelectronic Transistor: Progress & Expectations

Despite the Mooreís Law decrease in CMOS transistor scale, computer clock speeds are now power limited due to freezing of voltage scaling. We describe a new digital switch, the PiezoElectronic Transistor (PET) [1], aimed at circumventing the speed and power limitations of the CMOS transistor. In PET operation an electrical input is transduced into an acoustic pulse by a piezoelectric (PE) actuator, which, in turn, drives a pressure driven insulator-to-metal transition in a piezoresistive (PR) channel, switching on the device. Theory and simulation, based on bulk material properties, predictthat PETs can operate at about one-tenth the present voltage of CMOS technology, and 100 times less power, while running at multi-GHz clock speeds. CMOS-like computer architectures, such as a simulated adder, can be fully implemented. Thus PET technology offers greener or higher compute power options for switching logic at scales from handheld to supercomputer. Materials development for PE and PR thin films and a successful fabrication scheme, are key. We describe progress in developing two generations of PET devices as steps towards realizing this agenda.

[1] D.M. Newns, B.G. Elmegreen, X.-H. Liu, G.J. Martyna, Adv. Mat.. 24 3672 (2012); D.M. Newns, B.G. Elmegreen, X.-H. Liu, G.J. Martyna, J. Appl. Phys.111, 084509 (2012).

Oral: Dax M. Crum

Novel Quantum-Corrected Semi-Classical Ensemble Monte Carlo Simulator for Nano-Scale III-V In0.47Ga0.53As Tri-Gate FinFETs
Co-authors: Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee

Oral: Svetlana Vitusevich

Switching of Scattering Mechanism by Gate Coupling Effect
Co-authors: Sergii Pud, Jing Li, Mykhaylo Petrychuk, Andreas Offenhaeusser

Oral: Stanko Tomic

Optimisation of Biexciton Binding Energy in CdSe/CdTe Core/Shell QD's for MEG
Co-authors: Jacek Miloszewski, Tom Walsh, David Binks

Oral: Fernando Gonzalez-Zalba

The Sisyphus Impedance at the Zero Dimensional Limit
Co-authors: Sylvain Barraud, Andreas C. Betz

Oral: Samson Mil’shtein

SiGe HBT with Quantum Well Base
Co-authors: John Palma, Toshihiko Oka


Session Chairs

Dennis M. Newns

IBM Research Center
Dr. Newns received his Ph.D. degree in physical chemistry from Imperial College, London, in 1967. He subsequently held research positions at the University of Chicago and Cambridge University, and then held academic positions at Imperial College until joining the research staff of IBM in 1986. Dr. Newns’ research interests, primarily in condensed matter, include surface science, the Kondo effect and heavy Fermion systems, high-temperature... Read More →

Tuesday August 12, 2014 08:30 - 10:30
Room 19B

Attendees (13)