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Monday, August 11 • 14:00 - 16:00
Spintronics & Spin Phenomena I

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Invited: Olaf van 't Erve

A Graphene Solution to Conductivity Mismatch: Spin Injection from Ferromagnetic Metal / Graphene Tunnel Contacts into Silicon

Electrical transport in graphene, a single sheet of carbon atoms in a hexagonal lattice, has quickly become one of the most studied topics in materials science and condensed matter physics. While these efforts have focused on graphene's extraordinary in-plane charge carrier mobility and conductivity, the out-of-plane charge and spin transport of this material have largely been ignored. To explore the out of plane transport properties, we will use two examples. First we show how a single layer of graphene can be used as an atomically-thin tunnel barrier in a magnetic tunnel junction preserving the spin polarization of the electrons while providing thickness control. We have measured out-of-plane transport through a single layer of graphene by fabricating metal-graphene-metal junctions using two ferromagnetic metals, in an MTJ structure. We observe spin-polarized electron tunneling clearly measureable even above room temperature. Secondly, we demonstrate the use of graphene as a tunnel barrier for spin injection into a Silicon channel. Here the graphene provides a low resistance tunnel barrier, impervious to metal diffusion into Silicon while preserving its spin polarizing properties, unattainable by more conventional oxide barriers. These results demonstrate the unique out of plane transport properties of graphene and enable realization of semiconductor spintronic devices such as spin-based transistors, logic and memory.

Oral: Tomonori Arakawa
Observation of Spin Shot Noise
Co-authors: Junichi Shiogai, Mariusz Ciorga, Martin Utz, Dieter Schuh, Makoto Kohda, Junsaku Nitta, Dominique Bougeard, Dieter Weiss, Teruo Ono, Kensuke Kobayashi

Oral: Felix Hernandez
Resonant Optical Reorientation & Amplification of the Current-Induced Spin Polarization in a Two-Dimensional Electron System
Co-authors: Leonardo Nunes, Gennady Gusev, Askhat Bakarov

Oral: Andrzej Skierkowski
Doping Induced Rashba Spin Splitting in Graphene & BN
Co-authors: Mikolaj Sadek, Jacek Majewski

Oral: Caio Lewenkopf
Spin Relaxation by Local Magnetic Moments in Disordered Graphene Sheets
Co-authors: Vladimir Miranda

Oral: Andrei Kudriavtcev
Spin Interference in Edge Channels of Silicon Nanosandwiches
Co-authors: Nikolay Bagraev, Leonid Klyachkin, Anna Malyarenko, Vladimir Mashkov

Oral: Yuki Wakabayashi
Properties of Group-IV Based Ferromagnetic Semiconductor GeFe: Growth Temperature Dependence, Location of Fe Atoms, & its Relevance to the Magnetic Properties
Co-authors: Yoshisuke Ban, Shinobu Ohya, Masaaki Tanaka  

Session Chairs

Andrew Sachrajda

National Research Council Canada


Olaf van 't Erve

Research Scientist, Naval Research Laboratory
Olaf M.J. van ‘t Erve received his B.S., M.S., and his Ph.D. degree in electrical engineering, in 1995, 1998 and 2002 respectively, from hogeschool Enschede and the University of Twente, the Netherlands. He started his career in spintronic devices with his Ph.D. research that focused on spin-polarized hot-electron transport through metals. Since then he has done his spintronic research at the Naval Research Laboratory in Washington DC, USA... Read More →

Monday August 11, 2014 14:00 - 16:00
Room 18CD

Attendees (19)