This event has ended. View the official site or create your own event → Check it out
This event has ended. Create your own
View analytic
Tuesday, August 12 • 11:00 - 13:00
Electron Devices & Applications II

Sign up or log in to save this to your schedule and see who's attending!

Click here to view Abstracts


Invited: John Robertson
Passivation of Interfacial Defects at III-V Semiconductor - Oxide Interfaces for MOSFETs

The III-V compound semiconductors such as GaAs, InAs and GaSb are needed as high mobility channel materials for use in metal-oxide-semiconductor field-effect-transistors (MOSFETs). However III-V based MOSFETs have long been hindered by our inability to properly passivate their surfaces so that the Fermi-level could be moved freely across their whole band gap. This requires a good understanding of the defects at the dielectric:semiconductor interface. We first calculate which defect species give rise to gap states. These are the As-As dimmer bonds, and the As and Ga dangling bonds. The more general underlying reason for the presence of interfacial defects then found to be the polar bonding of III-Vs, which leads to the Fermi level tending to enter the bands, due to the difficulty of valence satisfaction. An electron counting rule leads to complex surface reconstructions. A satisfactory oxide must break these complex reconstructions, stopping the formation of As-As bonds. It must act as a diffusion barrier to stop preferential oxidation of Ga, leading to As injection into the substrate forming As antisite defects. We calculate the chemical trends of various intrinsic interfacial defects of the InAs, InP and GaSb (100) and (110) interfaces compared to GaAs using ab-initio methods. The results are consistent with the experimentally observed interface defects found by Takagi et al. We finally describe how nitridation of the semiconductor- oxide interface reduces the density of gap states.

Co-authors: Yuzheng Guo

Oral: Stanko Tomic

In-Plane Coupling Effect on Efficiency of InAs/GaAs Quantum Dots Arrays for Intermediate Band Solar Cell

Co-authors: Tomah Sogabe, Yoshitaka Okada

Oral: Su-Huai Wei
Theoretical Investigation of Grain Boundary in Polycrystalline Solar Cell Absorbers
Co-authors: Ji-Sang Park, Wan-Jian Yin, Yanfa Yan


Oral: Stuart Solin
Detection of Captavidin Binding with an Extraordinary Electro conductance (EEC) sensor
Co-authors: Lauren Tran, Fletcher Werner

Oral: Morten Willatzen
Extraordinary Electro-Acoustic Gain in Semiconductors in the THz Regime 
Co-authors: Johan Christensen



John Robertson

University of Cambridge
Research interests include: Carbon Nanotubes, graphene, chemical vapour deposition, electronic applications (experimental and calculation). Modelling of CVD mechanisms. Carbon interconnects, carbon conductors, carbon for supercapacitors. High dielectric constant (K) oxides for complementary metal oxide semiconductor transistors. High K oxides on high mobility substrates such as InGaAs, Ge (modelling). Transparent conducting oxides, amorphous... Read More →

Tuesday August 12, 2014 11:00 - 13:00
Room 19B

Attendees (15)