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Wednesday, August 13 • 10:20 - 12:20
Narrow-Gap Semiconductor I

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Invited: Lars-Erik Wernersson
Narrow Gap Semiconductors: From Nanotechnology to RF-Circuits on Si
Co-authors: N/A

The family of narrow gap semiconductors have a unique set of materials properties including large electron or hole mobility, narrow band gaps, and intriguing band alignments that we may use for high performance electron devices, long wavelength optoelectronic devices, or sophisticated quantum devices. The lack of suitable substrates is, however, a limiting factor. Nanotechnology offers unprecedented possibilities for material integration as the requirement of lattice matching is relaxed. In this presentation we will demonstrate how we have explored the MOVPE growth of narrow bandgap nanowires and implemented a number of devices. The introduction of Antimon changes the growth characteristics significantly and affects the nanowire diameter and crystal structure. A wide range of materials combinations have been realized and the unique electrostatic control in the nanowire geometry has been used to implement a number of advanced transistor architectures on a Si platform. Highlights: -Nanowire growth of InSb, GaSb, and their alloys using stems of InAs and GaAs, respectively. -Realization of InAs/GaSb broken gap Tunnel Field-Effect Transistors in axial and radial configuration with record on-state performance. -Implementation of CMOS inverters in individual nanowires consisting of InAs and GaSb segments. -Operation of InAs-based RF-mixers on Si substrates. -Demonstration of long wavelength photoconduction in InAsSb nanowires.


Jose Menendez
Group-IV Semiconductors with Sn: Band Gap Studies & Structural Properties
Co-authors: James Gallagher, Liying Jiang, Chi Xu, John Kouvetakis

Oral: Bela Kvirkvelia
Electrical Properties & Crystal Perfection of the n-type Si-rich SiGe Alloys Bulk Single-Crystals
Co-authors: Elza Khutsishvili, Leonti Gabrichidze, Bela Kvirkvelia, Gulnara Urushadze, George Kekelidze, Nodar Kekelidze

Oral: Christopher Broderick
Theory of the Electronic Structure of the Dilute Bismide Alloy GaBiAs
Co-authors: Muhammad Usman, Eoin O'Reilly

Oral: Dmitry Khokhlov
Terahertz Probing of Local Electron States in Doped Lead Telluride-Based Semiconductors 
Co-authors: Svetlana Egorova, Vladimir Chernichkin, Ludmila Ryabova, Andrey Nicorici, Sergey Danilov 


Session Chairs

William Rice

Los Alamos National Laboratory


Lars-Erik Wernersson

Professor & Nanoelectronics Research Group Director, Lund University
Lars-Erik Wernersson is directing a research group in Nanoelectronics in Lund working with applications of nanotechnology in IT. He has activities both related to nanoscience at the Physics Department and to hardware implementation at the Electrical- and Information Technology Department. He has been scientific coordinator and co-PI in several major research programs at either department, for instance Quantum Materials (SSF), Nano-Science for... Read More →

Wednesday August 13, 2014 10:20 - 12:20
Room 19A

Attendees (9)