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Thursday, August 14 • 08:30 - 10:30
Wide Band Gap I

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8:30-8:45

Oral: Jonathan W. Anderson
Investigation of AlGaInN Microstructure
Co-authors: Francisco Ruiz, O. Laboutin, Y. Cao, Arturo Ponce, J.W. Johnson, Edwin L. Piner

8:45-9:00
Oral: Witold Bardyszewski
Theoretical Study of Excitonic g-factor in GaN/AlGaN & InGaN/GaN Quantum Wells
Co-author: Slawomir Lepkowski

9:00-9:15
Open

9:15-9:30
Oral: Sean King
Photoemission Investigation of the Electronic Structure of ScN Interfaces with 3C-SiC and 2H-GaN (0001)
Co-authors: Robert Davis, Robert Nemanich

9:30-10:00
Invited: Yong-Hoon Cho
Group III-Nitride Nanostructures for Solid State Lighting & Quantum Photonics
Co-authors: N/A 

Low-dimensional semiconductor quantum structures have been actively investigated due to their unique electronic and optical properties. In particular, much attention has been paid to group III-nitride semiconductor nanostructures due to their wide range of bandgap energy and versatile optoelectronic applications. We present various types of group III-nitride nanostructures and their applications for solid state lighting and quantum photonics. First, GaN-based nanopyramid structures were fabricated and electrically driven light emitting diodes were demonstrated [1]. Second, GaN-based nanorod structures were directly grown on Si substrates by metal-organic chemical vapor deposition without using any catalysts [2]. InGaN/GaN quantum well layers deposited on the GaN nanorods showed intriguing optical properties depending on the facets of the structures. Third, tapered GaN nanostructures were fabricated using chemical vapor phase etching method [3]. By growing InGaN/GaN quantum structures on the etched nanostructures, we could obtain ultrafast and high efficiency single photon generation [4]. Single quantum dots formed in these types of nanostructures overcome many limitations in conventional self-assembled quantum dots and can be utilized as high efficiency quantum emitters for quantum information technologies.

[1] Advanced Materials 23, 5364 (2011).
[2] Crystal Growth & Design 12, 3838 (2012).
[3] Crystal Growth & Design 12, 1292 (2012).
[4] Scientific Reports 3, 2150 (2013).

10:00-10:15
Oral: Tsukasa Nakamura
Compensation Mechanism of DX-like Center in Neutron Transmutation Doped-GaN
Co-authors: Kazuma Kamioka, Kazuo Kuriyama, Kazumasa Kushida, Q Xu, Masataka Hasegawa

10:15-10:30
Oral: Alexey S. Pavluchenko
High Power AlInGaN Based LEDs with Reduced Efficiency Droop
Co-authors: Dmitry A. Zakheim, Irina P. Smirnova, Lev K. Markov, Mikhail V. Kukushkin, Dmitry A. Bauman

Session Chairs
JW

Jörg Weber

Professor & Chair of Semiconductor Physics, TU Dresden
Prof. Jörg Weber is Chair of Semiconductor Physics at TU Dresden since December 1999. He is engaged in the study of impurities and defects in various semiconductors. His present area of specialization is the study of hydrogen in various hosts and its importance in device technology. | | Prof. Jörg Weber was dean and vice rector, coeditor of several special issues of "Applied Physics", and chaired and co-chaired several meeting... Read More →

Speakers
YC

Yong-Hoon Cho

Lead, KAIST Center for LED Research, Korea Advanced Institute of Science & Technology
Dr. Yong-Hoon Cho received his Ph.D. degree in solid state physics from Department of Physics, Seoul National University (Korea) in 1997. He worked on growth, fabrication, and various structural, electrical, and oprical characterizations of III-V semconductor thin films and quantum device structures. In April 1997, he was a postdoctoral researcher at Center for Laser and Photonics Research, Oklahoma State University, OK (USA) and worked on the... Read More →


Thursday August 14, 2014 08:30 - 10:30
Room 17B

Attendees (8)