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Oral: Jonathan W. Anderson
Investigation of AlGaInN Microstructure
Co-authors: Francisco Ruiz, O. Laboutin, Y. Cao, Arturo Ponce, J.W. Johnson, Edwin L. Piner
Oral: Witold Bardyszewski
Theoretical Study of Excitonic g-factor in GaN/AlGaN & InGaN/GaN Quantum Wells
Co-author: Slawomir Lepkowski
Oral: Sean King
Photoemission Investigation of the Electronic Structure of ScN Interfaces with 3C-SiC and 2H-GaN (0001)
Co-authors: Robert Davis, Robert Nemanich
Invited: Yong-Hoon Cho
Group III-Nitride Nanostructures for Solid State Lighting & Quantum Photonics
Low-dimensional semiconductor quantum structures have been actively investigated due to their unique electronic and optical properties. In particular, much attention has been paid to group III-nitride semiconductor nanostructures due to their wide range of bandgap energy and versatile optoelectronic applications. We present various types of group III-nitride nanostructures and their applications for solid state lighting and quantum photonics. First, GaN-based nanopyramid structures were fabricated and electrically driven light emitting diodes were demonstrated . Second, GaN-based nanorod structures were directly grown on Si substrates by metal-organic chemical vapor deposition without using any catalysts . InGaN/GaN quantum well layers deposited on the GaN nanorods showed intriguing optical properties depending on the facets of the structures. Third, tapered GaN nanostructures were fabricated using chemical vapor phase etching method . By growing InGaN/GaN quantum structures on the etched nanostructures, we could obtain ultrafast and high efficiency single photon generation . Single quantum dots formed in these types of nanostructures overcome many limitations in conventional self-assembled quantum dots and can be utilized as high efficiency quantum emitters for quantum information technologies.
 Advanced Materials 23, 5364 (2011).
 Crystal Growth & Design 12, 3838 (2012).
 Crystal Growth & Design 12, 1292 (2012).
 Scientific Reports 3, 2150 (2013).10:00-10:15Oral: Tsukasa NakamuraCompensation Mechanism of DX-like Center in Neutron Transmutation Doped-GaN
Co-authors: Kazuma Kamioka, Kazuo Kuriyama, Kazumasa Kushida, Q Xu, Masataka Hasegawa10:15-10:30Oral: Alexey S. PavluchenkoHigh Power AlInGaN Based LEDs with Reduced Efficiency Droop
Co-authors: Dmitry A. Zakheim, Irina P. Smirnova, Lev K. Markov, Mikhail V. Kukushkin, Dmitry A. Bauman