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Tuesday, August 12 • 14:30 - 16:30
Electron Devices & Applications III

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Invited: Chiara Marchiori
Ultra Thin InGaAs-On-Insulator: Physics & Chemistry of MOSFETs Critical Interfaces

Power reduction is the driving force behind the development of advanced CMOS. High mobility channels such as InGaAs and SiGe are the leading option, because devices and circuits can then work at lower drive voltage. For both n- and p-FET, the transistor built out of very thin semiconducting “high-m” channels on silicon enables fully depleted operation. Multiple oxide/semiconductor interfaces are therefore of technological relevance. The dielectric/channel interface at the gate, as well as the interface between the InGaAs channel and a buried oxide layer will determine the nFET transistor characteristics. We present here an in-depth characterization of both interfaces, extracted from InGaAs-On-Insulator structures fabricated using direct wafer bonding. Device characteristics obtained from self-aligned MOSFETs or from Y–MOS structures can be used to characterize the front resp. back interface. Physical characterization such as X-ray photoelectron spectroscopy measurements allow to extract fundamental properties of the dielectric/InGaAs interface such as reactivity, band offsets, induced band bending and Fermi level position in the semiconductor. These results will be put in perspective with the technological requirements for CMOS technology based on hybrid III-V/SiGe channels.

Oral: Giacomo Miceli
Hybrid Functional Study of Interfacial Defects at the GaAs/Al2O3 Interface
Co-author: Alfredo Pasquarello

Oral: Jim Webb
High Resolution Scanning Probe Microscopy Measurements of Semiconductor Nanowire Devices during Operation
Co-authors: Olof Persson, Kimberley Dick, Claes Thelander, Rainer Timm, Anders Mikkelsen

Oral: Qiang Li
Suspended Gate-All-Around InAs Nanowire Field-Effect Transistors
Co-authors: Shaoyun Huang, Jingyun Wang, Dong Pan, Jianghua Zhao, H.Q. Xu

Oral: Damon Carrad
Electron-Beam Patterning of Polymer Electrolyte Films to Make Multiple Nanoscale Gates for Nanowire Transistors
Co-authors: Adam M. Burke, Roman W. Lyttleton, Hannah J. Joyce, Hark Hoe Tan, Chennupati Jagadish, Kristian Storm, Sofia Fahlvik-Svensson, Heiner Linke, Lars Samuelson, Adam Micolich

Oral: Olafur Jonasson
Current Oscillations in a DC-Biased Resonant Tunneling Diode at Room Temperature
Co-authors: Irena Knezevic 


Session Chairs

John Robertson

University of Cambridge
Research interests include: Carbon Nanotubes, graphene, chemical vapour deposition, electronic applications (experimental and calculation). Modelling of CVD mechanisms. Carbon interconnects, carbon conductors, carbon for supercapacitors. High dielectric constant (K) oxides for complementary metal oxide semiconductor transistors. High K oxides on high mobility substrates such as InGaAs, Ge (modelling). Transparent conducting oxides, amorphous... Read More →


Chiara Marchiori

Research Scientist & Scientific Project Lead, IBM Zurich Research Laboratory
Dr. Chiara Marchiori currently supports Matthias Kaiserswerth, director of IBM Research-Zurich, as his technical assistant. In parallel she conducts scientific research, writes and coordinates governmental and joint projects in the Advanced Functional Materials group. | | At IBM Research-Zurich, she leads the development of gate stacks suited for metal-oxide-semiconductor field-effect transistors based on high-mobility channels (III-V compound... Read More →

Tuesday August 12, 2014 14:30 - 16:30
Room 19B

Attendees (9)