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Friday, August 15 • 11:00 - 13:00
Wide Band Gap IV

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Oral: A.R. Goni
Dependence on Pressure of the Refractive Indices of Wurtzite ZnO, GaN & AlN
Co-authors: F. Käss, J.S. Reparaz, M.I. Alonso, M. Garriga, G. Callsen, M. R. Wagner, A. Hoffmann, Z. Sitar

Oral: David Mora-Fonz
Why Are Polar Surfaces of ZnO Stable?
Co-author: Richard Catlow

Oral: Shantanu Saha
Photoluminescence Study of Zn0.85Mg0.15O Thin Films Implanted with Phosphorus Ions Using Plasma Immersion Ion Implantation
Co-authors: Saurabh Nagar, Subhananda Chakrabarti

Oral: Gwenole Jacopin
Exciton Drift under Uniform Strain Gradient in Bent ZnO Microwires
Co-authors: Xuewen Fu, Mehran Shahmohammadi, Ren Liu, Malik Benameur, Jean-Daniel Ganière, Ji Feng, Wanlin Guo, Zhimin Liao, Benoît Deveaud, Dapeng Yu

Invited: Matthew McCluskey
Acceptor Mysteries in Zinc Oxide 
Co-authors: Caleb Corolewski, Marianne Tarun, Samuel Teklemichael 

Zinc oxide (ZnO) is a semiconductor that emits bright UV light, with little wasted heat. This intrinsic feature makes it a promising material for energy-efficient white lighting, nano-lasers, and other optical applications. For devices to be competitive, however, it is necessary to develop reliable p-type doping. Although substitutional nitrogen has been considered as a potential p-type dopant for ZnO, recent theoretical and experimental work suggests that nitrogen is a deep acceptor and will not lead to p-type conductivity. This talk will highlight some experiments on acceptor doping of ZnO. In nitrogen-doped samples, a red photoluminescence (PL) band is correlated with the presence of deep nitrogen acceptors. PL excitation (PLE) measurements show an absorption threshold of 2.26 eV, in good agreement with theory. The results of these studies seem to rule out group-V elements as shallow acceptors in ZnO, contradicting numerous reports in the literature. It is possible that surface and interface conduction could be responsible for some of those observations. Optical studies on ZnO nanocrystals show some intriguing leads. At liquid-helium temperatures, a series of sharp IR absorption peaks arise from an unknown acceptor impurity. The data are consistent with a hydrogenic acceptor 0.46 eV above the valence band edge. While this binding energy is still too deep for many practical applications, it represents a significant improvement over the ~1.3 eV binding energy for nitrogen acceptors.

Oral: Michael Reshchikov
Thermal Quenching of Photoluminescence in III-V & II-IV Semiconductors


Session Chairs

Su-Huai Wei

National Renewable Energy Laboratory


Matthew McCluskey

Westinghouse Professor & Chair of the Department of Physics & Astronomy, Washington State University
Matthew McCluskey is Westinghouse Professor and Chair of the Department of Physics and Astronomy, Washington State University (WSU). He received a Physics B.Sc. from MIT in 1991 and Ph.D. from the University of California, Berkeley in 1997. He was a postdoctoral researcher at the Xerox Palo Alto Research Center (PARC) from 1997 to 1998. Dr. McCluskey joined WSU as an assistant professor in 1998. His research interests include semiconductors... Read More →

Friday August 15, 2014 11:00 - 13:00
Room 17B

Attendees (8)