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Sunday, August 10
 

10:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts



Sunday August 10, 2014 10:00 - 18:00
Ballroom D – Outside

14:00

Plenary I
14:00-14:40
Plenary: Marvin L. Cohen
Semiconductors: A Pillar of Pure & Applied Science

I have the privilege of giving you an overview of the central role semiconductor research has played in basic and applied science. I will focus mainly on the former with some general comments about applications such as the transistor, integrated circuits, solar devices and lasers that have come from basic research. There are also many links to other branches of physics and more generally other areas of science and fields like electrical engineering, computer science, material science, medical science, and chemistry that have led to applications that have made significant contributions to our everyday life. However, others will speak more about these.

I will focus mainly on how semiconductor studies have influenced the intellectual and conceptual aspects of some areas of physics. Studies of the electronic structure of semiconductors resulted in this area becoming a large part of the theoretical foundation of modern condensed matter physics and materials science. Studies of correlation effects in semiconductors led to the quantum Hall effects, fractional charges, new superconductors, topological insulators, Mott systems, and a number of other areas of research that have become among the most active in physics Some of these studies have influenced other areas of physics and chemistry. Semiconductor research has been highly recognized. Starting with the transistor, there have been eight Nobel Prizes in Physics awarded for research in this field.

14:40-15:20
Plenary: Bob Doering
History of Semiconductor Electronics 

The history of semiconductor electronics is a very rich subject. This presentation will address it via highlighting a selection of major inventions and their implementations, focusing on transistor technology. This history goes back at least to the invention of the field-effect transistor in 1925. However, it was not until the demonstration of the point-contact transistor in 1947 and, especially the invention of the bipolar-junction transistor in 1951, that semiconductor electronics began to have a significant impact. Early transistors were germanium, which quickly gave way to more robust silicon devices in the early 1950s. Of course, the next great advance was the invention/demonstration of the integrated circuit in 1958. This allowed the exploitation of feature-size scaling to enable reliable electronic circuits with the well-known exponential trends of improvement in performance, energy-efficiency, and cost that we have now enjoyed for over 50 years. The last three decades of this era has been dominated by CMOS technology, which has carried the semiconductor electronics industry to an annual worldwide market of over $300B. Thus, we will review some of the major steps in the advancement of CMOS as it has, thus far, been scaled to gate lengths on the order of 20 nanometers in commercial products. 

15:20-16:00
Plenary: Thomas Theis
The Future of Digital Nanoelectronics

The Field Effect Transistor (FET)sparked the information technology revolution. Now, after decades of devoting resources to improving the FET, leading U.S. semiconductor companies are increasing their research investment in new devices and circuit architectures with the potential to take information technology beyond the inherent limits of the FET. Through NRI, and now STARnet, industry has partnered with NSF, NIST, and DARPA to promote university research on this new frontier. New materials and device concepts offer the potential to reduce energy consumption per logical operation by two to three orders of magnitude. Tunneling FETs (TFETs) based on III-V heterostructures are promising for very low power applications where switching speed is a secondary concern. They are already the subject of experiments at industrial labs. Newer TFET concepts, based on metal dichalcogenides and other two-dimensional materials, may ultimately switch faster than the FET. Nanomagnetic devices will switch more slowly, but offer the intriguing combination of memory and logic functions in one device. Despite the excitement and the growing research investment, the landscape of promising research opportunities outside the "FET box" is vast and cannot be fully explored with current funding. 

Session Chairs
KV

Klaus von Klitzing

Max Planck Institute for Solid State Research

Speakers
ML

Marvin L. Cohen

UC Berkeley & Lawrence Berkeley National Laboratory
Marvin L. Cohen is University Professor of Physics at the University of California at Berkeley and Senior Faculty Scientist at the Lawrence Berkeley National Laboratory. | | Cohen’s current and past research covers a broad spectrum of subjects in theoretical condensed matter physics. He is a recipient of the National Medal of Science, the APS Oliver E. Buckley Prize for Solid State Physics, the APS Julius Edgar Lilienfeld Prize, the... Read More →
BD

Bob Doering

Senior Fellow & Research Manager, Texas Instruments, Inc.
Dr. Doering is a Senior Fellow and Research Manager at Texas Instruments. He is also a member of TI’s Technical Advisory Board, Kilby Labs Review Board, External Development and Manufacturing Leadership Team, and Executive University Research Steering Team. His previous positions at TI include: Manager of CMOS and DRAM Process Development, Director of the Microelectronics Manufacturing Science and Technology (MMST) Program, Director of... Read More →
TT

Thomas Theis

Director, Nanoelectronics Research Initiative, IBM Thomas J. Watson Research Center
Dr. Thomas Theis is on assignment from the IBM Corporation to serve as the Director of the Nanoelectronics Research Initiative (NRI), and is based at the Thomas J. Watson Research Center in Yorktown Heights, New York. The NRI supports university-based research on future nanoscale logic devices to replace the CMOS transistor in the 2020 timeframe. | | Tom received a B.S. degree in physics from Rensselaer Polytechnic Institute in 1972, and M.S... Read More →


Sunday August 10, 2014 14:00 - 16:00
Ballroom D

17:30

Welcome Reception
Hilton Austin Hotel, 6th Floor, Salon FG.

Welcome to Austin and ICPS 2014. Join us for light hors d'oeuvres and beverages. Food/Water is complimentary. Open bar for alcohol, soft drinks, and bottled water.

 

Sunday August 10, 2014 17:30 - 19:00
Assorted
 
Monday, August 11
 

07:30

Complimentary Coffee & Tea
Complimentary coffee and tea served outside Ballroom D.  

Monday August 11, 2014 07:30 - 11:30
Ballroom D – Outside

08:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts




Monday August 11, 2014 08:00 - 16:00
Ballroom D – Outside

08:45

Opening Ceremony
Monday August 11, 2014 08:45 - 09:00
Ballroom D

09:00

Plenary II
9:00-9:40
Plenary: Steven G. Louie
Electron Excitations & Optical Response of van der Waals Layers: Graphene & Beyond Graphene

Experimental and theoretical studies of atomically thin quasi two-dimensional materials (typically related to some parent van der Waals layered crystals) and their nanostructures have revealed that these systems can exhibit highly unusual behaviors. In this talk, we discuss some theoretical studies of the electronic, transport and optical properties of such systems. We present results on graphene and graphene nanostructures as well as other quasi 2D systems such as monolayer or few-layer transition metal dichalcogenides (e.g., MoS2, MoSe2, WS2, and WSe2). Owing to their reduced dimensionality, these systems present opportunities for unusual manifestation of concepts/phenomena that may not be so prominent or have not been seen in bulk materials. Symmetry and many-body interaction effects often play a critical role in shaping qualitatively and quantitatively their properties. Several novel quantum phenomena are discussed, exploring their physical origin and comparing theoretical predictions with experimental data.

9:40-10:20
Plenary: Andre Geim
The Rise of van der Waals Heterostructures

Following the advent of graphene, many other one-atom or one-molecule thick crystals have been isolated. These 2D crystals have become one of the hottest topics in materials science and condensed matter physics. Moreover, isolated atomic planes can now be reassembled into designer structures made layer by layer in a precisely chosen sequence. The first but already remarkably complex heterostructures have recently been fabricated and investigated. I will briefly overview our own progress in making such heterostructures with clean and atomically sharp interfaces and then, to illustrate how rich in phenomena the research area is, focus on the electronic properties of lateral superlattices made by placing graphene on boron nitride.

10:20-11:00
Plenary: Franco Nori
Quantum Circuits as Artificial Atoms on a Chip: A Pedagogical Introduction

Recent technological advances have made it possible to implement atomic-physics and quantum-optics experiments on a chip using artificial atoms. These artificial atoms can be made from either semiconductor quantum dots and, more often, from superconducting circuits. Superconducting circuits based on Josephson junctions exhibit macroscopic quantum coherence and can behave like artificial atoms. Novel electronic devices are being explored with these type of superconducting (low-power-consumption) electronics. This talk presents a pedagogical (and, hopefully, entertaining) brief introduction to this rapidly advancing field. The references [1-13] provide a few overviews on various aspects of this subject and related topics.

[1] J.Q. You, F. Nori, Atomic Physics and Quantum Optics using Superconducting Circuits, Nature, 474, 589 (2011). (a nine-pages overview of this field). 
[2] J.Q. You, F. Nori, Superconducting circuits and quantum information, Physics Today 58 (11), 42-47 (2005). 
[3] I. Buluta, F. Nori, Quantum Simulators, Science 326, 108 (2009). 
[4] I. Buluta, S. Ashhab, F. Nori, Natural and artificial atoms for quantum computation, Reports on Progress in Physics 74, 104401 (2011). 
[5] F. Nori, Atomic physics with a circuit, Nature Physics 4, 589 (2008). 
[6] F. Nori, Quantum football, Science 325, 689 (2009). 
[7] S.N. Shevchenko, S. Ashhab, F. Nori, Landau-Zener-Stuckelberg interferometry, Physics Reports 492, 1 (2010). (about 50-50 split of review and original work) 
[8] P.D. Nation, J.R. Johansson, M.P. Blencowe, F. Nori, Stimulating uncertainty: Amplifying the quantum vacuum with superconducting circuits, Rev. Mod. Phys., 84, 1-24 (2012). 
[9] I. Georgescu, F. Nori, Quantum technologies: an old new story, Physics World 25, 16-17 (2012). This two-page summary is non-technical. 
[10] A.G. Kofman, S. Ashhab, F. Nori, Weak pre- and post-selected measurements, Physics Reports 520, 43-133 (2012) (about 20 pages review, plus 70 pages of original work). 
[11] Z.-L. Xiang, S. Ashhab, J.Q. You, F. Nori, Hybrid quantum circuits: Superconducting circuits interacting with other quantum systems, Rev. Mod. Phys. 85, 623 (2013). 
[12] C. Emary, N. Lambert, F. Nori, Leggett-Garg Inequalities, Reports on Progress in Physics 77, 016001 (2014). 
[13] I. Georgescu, S. Ashhab, F. Nori, Quantum Simulation, Rev. Mod. Phys. 86, 153 (2014). Also the cover image.

Session Chairs
JR

James R. Chelikowsky

The University of Texas at Austin

Speakers
AG

Andre Geim

Professor, The University of Manchester
Sir Andre Konstantin Geim, FRS is a Russian-born Dutch-British physicist working at the University of Manchester. Geim was awarded the 2010 Nobel Prize in Physics jointly with Konstantin Novoselov for his work on graphene. He is Regius Professor of Physics and Royal Society Research Professor at the Manchester Centre for Mesoscience and Nanotechnology.
SG

Steven G. Louie

Professor & Senior Faculty Scientist, UC Berkeley & Lawrence Berkeley National Laboratory
Steven G. Louie is Professor of Physics at the University of California at Berkeley and Senior Faculty Scientist at the Lawrence Berkeley National Laboratory. His research spans a broad spectrum of topics in theoretical condensed matter physics and nanoscience. Louie is a member of the National Academy of Sciences, the American Academy of Arts and Sciences, the Academia Sinica (Taiwan), and is a fellow of the American Physical Society (APS) and... Read More →
FN

Franco Nori

Chief Scientist & Group Director & Professor, RIKEN & University of Michigan
Professor Franco Nori’s research is in theoretical condensed matter physics and quantum information processing. He has also done research in computational physics, transport phenomena (e.g., of vortices or electrons), energy conversion and solar energy, as well as the dynamics of complex systems. His research work is interdisciplinary and also explores the interface between atomic physics, quantum optics, nano-science, and computing. His... Read More →


Monday August 11, 2014 09:00 - 11:00
Ballroom D

11:00

Break
Complimentary coffee and tea served outside of Ballroom D.

Monday August 11, 2014 11:00 - 11:30
Assorted

11:30

Carbon: Nanotubes & Graphene I

Click to view Abstracts

11:30-11:45
Oral: Annette S. Plaut

Self-Limiting van der Waals Molecular Beam Epitaxial Growth of Graphene on Hexagonal Boron Nitride
Co-authors: Ulrich Wurstbauer, Sheng Wang, Annette Plaut, Antonio L. Levy, Lara Fernandes dos Santos, Lei Wang, Loren N. Pfeiffer, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, James Hone, Aron Pinczuk, Jorge M. Garcia 

11:45-12:00
Oral: Ashley DaSilva
Electronic Structure & Interactions of Graphene on Boron Nitride
Co-authors: Jeil Jung, Shaffique Adam, Allan MacDonald

12:00-12:15
Oral: Mark Greenaway
Resonant Tunneling & Negative Differential Conductance in Graphene / hBN / Graphene Transistors: Effects of Crystalline Misorientation
Co-authors: Artem Mishchenko, Liam Britnell, Roman Gorbachev, Andre Geim, John Wallbank, Vladimir Falko, Mark Fromhold, Konstantin Novoselov, Laurence Eaves

12:15-12:30
Open


Session Chairs
GL

Guy Le Lay

Professor, Université d'Aix-Marseille
Prof. Guy Le Lay is Full Professor of Physics since 1981. He has reached the topmost level attainable in France in 2007 (Classe exceptionnelle 2). He has been for several years a member of the Comité National des Universités and was for five years President of the regional section of the French Physical Society. Prof. Le Lay is a recognized specialist of Nanoscience, as well as an expert in Synchrotron Radiation. During his... Read More →

Monday August 11, 2014 11:30 - 12:30
Room 17B

11:30

Quantum Hall Effects I
11:30-12:00
Invited: Sankar Das Sarma
Topological Qubit in Quantum Hall Systems: Materials Considerations


Possible non-Abelian fractional quantum Hall states, e.g. the 5/2 FQHE, can in principle be used to carry out topologically protected quantum computing operations without any need for quantum error corrections [1]. Although the specific details for creating such a topological qubit in semiconductor quantum Hall systems have been pointed out [2] some years ago, the experimental progress toward developing a topological qubit in the laboratory has been slow. I will discuss in this talk how materials considerations [3] involving the growth and fabrication of high-quality two-dimensional semiconductor systems may play an important role in the eventual realization of the topological quantum computation dream using FQHE qubits.

[1] C. Nayak, S. Simon, A. Stern, M. Freedman, and S. Das Sarma, Rev. Mod. Phys. 80, 1083 (2008).
[2] S. Das Sarma, M. Freedman, and C. Nayak, Phys. Rev. Lett. 94, 166802 (2005).
[3] S. Das Sarma and E. H. Hwang, arXiv 1403.4256 (2014).

12:00-12:30
Invited: Mohammad Hafezi
Topological Orders in Photonic Systems


Topological features – global properties which are not discernible locally – emerge in a variety of physical systems. Deeper understanding of the role of topology in physics has led to a new class of matter: topologically-ordered systems. The best known examples are quantum Hall effects, where insensitivity to local properties manifests itself as conductance through edge states that is insensitive to defects and disorder.

In this talk, I demonstrate how similar physics can be observed for photons; specifically, how various quantum Hall Hamiltonians can be simulated with photons. I report on the first observation of topological photonic edge states using Silicon-on-insulator technology and discuss their robustness. Furthermore, the addition of optical nonlinearity to the system leads to the possibility of implementing fractional quantum Hall states of photons and anyonic states. In particular, I discuss a scheme to engineer three-body interaction, which is absent in nature, to implement some of the fractional quantum Hall states, in the context of circuit-QED system. Finally, I describe schemes to prepare such many-body states in lossy photonic systems.

Session Chairs
JK

Junichiro Kono

Rice University

Speakers
MH

Mohammad Hafezi

Assistant Professor, University of Maryland Fellow, Joint Quantum Institute, University of Maryland
Mohammad Hafezi received his diplome d'ingenieur from Ecole Polytechnique (Paris) in 2003 and his Ph.D. from Physics Department at Harvard University in 2009. He moved to the Joint Quantum Institute (NIST/University of Maryland) as a research associate and since 2012 he is a research faculty. His research is at the interface of theoretical quantum optics and condensed matter physics with a focus on fundamental physics and applications in... Read More →
SD

Sankar Das Sarma

Richard E. Prange Chair in Physics, Fellow, Joint Quantum Institute, Director, Condensed Matter Theory Center, University of Maryland
Sankar Das Sarma is an India-born American theoretical condensed matter physicist, who has worked in the areas of strongly correlated materials, graphene, semiconductor physics, low-dimensional systems, topological matter, quantum Hall effect, nanoscience, spintronics, collective properties of ultra-cold atomic and molecular systems, optical lattice, many-body theory, Majorana fermion, and quantum computation. His broad research areas are... Read More →


Monday August 11, 2014 11:30 - 12:30
Room 17A

11:30

Topological Insulators I
11:30-12:00
Invited: Yoichi Ando
Topological Qubit in Quantum Hall Systems: Materials Considerations


In this talk, I will present our recent results on fabrications and characterizations of topological insulator devices. We make devices using both thin films and exfoliated single crystals, and in either case the topological-insulator part is sufficiently bulk-insulating to allow access to the Dirac point by gating. One of our targets is to detect the spin response of the topological surface state using devices consisting of a topological insulator and a ferromagnet. Our spin pumping experiments, performed in collaboration with Prof. Eiji Saitoh's group at Tohoku University, gave clear evidence for spin-electricity conversion which takes place as a result of the spin-momentum locking when a fixed spin polarization is pumped into the topological surface state. We have also been trying to fabricate devices to address the peculiar surface state of topological crystalline insulators, where the physics is richer than in ordinary topological insulators and various novel applications can be conceived. An example of this class of materials is SnTe, and so far we have successfully grown SnTe thin films to address the peculiar (111) surface state and observed quantum oscillations coming from the Dirac cones of two different geometries.

12:00-12:30
Invited: Connie Li
Direct Electrical Detection of Spin-Momentum Locking in the Topological Insulator Bi2Se3

Topological insulator (TI) is a new quantum state of matter characterized by an insulating bulk with metallic surface states populated by massless Dirac fermions. One of its most striking properties is that of spin-momentum locking -- the spin of the TI surface state lies in-plane, and is locked at right angle to the carrier momentum. An unpolarized charge current should thus create a net spin polarization whose amplitude and orientation are controlled by the charge current. This remarkable property has been anticipated by theory, but never accessed in a simple transport structure. Here we show that a bias current indeed produces a net surface state spin polarization via spin-momentum locking in molecular beam epitaxially grown Bi2Se3 films, and this polarization is directly manifested as a voltage on a ferromagnetic metal contact. This voltage is proportional to the projection of the TI spin polarization onto the contact magnetization, is determined by the direction and magnitude of the bias current, scales inversely with Bi2Se3 film thickness, and its sign is that expected from spin-momentum locking rather than a Rashba effect. Similar data are obtained for structures with two different ferromagnet/tunnel barrier contacts, demonstrating that these behaviors are independent of the details of the detector contact. These results demonstrate direct electrical access to the TI surface state spin system and enable utilization of its remarkable properties for future technological applications. 

Co-authors: Olaf van 't Erve, Jeremy Robinson, Ying Liu, Lian Li, Berry Jonker

Session Chairs
RM

Ramesh Mani

Georgia State University

Speakers
YA

Yoichi Ando

Professor, Institute of Scientific & Industrial Research, Osaka University
The research of Ando Laboratory focuses on growths of high-quality singe crystals and top-notch transport measurements of novel materials, such as topological insulators and topological superconductors. Our emphasis is on precise and systematic measurements of basic physical properties, which allows one to unveil the peculiar electronic states of novel materials. This is achieved by combining the expertise in solid-state physics and applied... Read More →
CL

Connie Li

Research Scientist, Naval Research Laboratory
Connie H. Li is a staff research scientist in the Magnetoelectronic Materials & Devices section in the Materials Science & Technology Divison at the Naval Research Laboratory (NRL), Washington, DC. She received her B.S. and Ph.D. in 1998 and 2002 from the University of California, Los Angeles (UCLA), working on compound semiconductor surface reactions at an atomic scale in metal organic vapor phase epitaxy (MOVPE), during which she was... Read More →


Monday August 11, 2014 11:30 - 12:30
Room 18AB

11:30

Quantum Information I
Click to view Abstracts

11:30-12:00
Invited: Sven Rogge
Addressing Single Dopant Atoms in a Semiconductor Vacuum


Dopant atoms in semiconductor nano devices have recently received attention due to the variability problems in CMOS and the new opportunities for quantum electronics. The latter is based on the fact that dopants act like hydrogen atoms in a semiconductor vacuum with long coherence times and are compatible with VLSI fabrication techniques. Controlled access to single dopants has been achieved in multiple labs and recently control over the electron and nuclear spin has been demonstrated. Optical control of single qubits is very attractive since it allows for high spectral resolution, is non-local, and allows for long distance coupling but was not available in silicon. Here, we present optical addressing and electrical detection of individual erbium dopants with exceptionally narrow line width. The hyperfine coupling is clearly resolved which paves the way to single shot readout of the nuclear spin. This hybrid approach is a first step towards an optical interface to dopants in silicon. Furthermore, spatially resolved single electron tunnelling experiments will be discussed that reveal the spectrum and wavefunction of single dopants and dopant molecules. Dopants studied down to 5 nm below a Si-vacuum interface reveal a peculiar nature of the semiconductor vacuum which is the spatially resolved valley quantum interference of a donor in silicon.

12:00-12:30
Invited: Mike L. W. Thewalt
Highly Enriched 28Si – A 'Semiconductor Vacuum' Host for Spin Qubits
 

Enriched 28Si is a prime candidate for semiconductor-based quantum information research, since the absence of nuclear spin leads to very long coherence times for impurity electron or nuclear spins. It also has another unique property - the almost complete elimination of inhomogeneous broadening for a wide variety of optical transitions, leading to improvements in spectral resolution of over an order of magnitude, and to linewidths which are almost lifetime-limited. Since the first observation of this effect in 2001 [1], there have been a number of new discoveries and applications which I will review. Among the most important is the ability to resolve donor hyperfine splittings in donor bound exciton absorption spectra, providing an optical means of manipulating and reading out donor electron and nuclear spins. These new optical methods have allowed NMR measurements on highly enriched 28Si very lightly doped with 31P, resulting in the observation of record nuclear qubit coherence times of 180 s for the neutral 31P donor at 1.3 K [2]. While neutral donors are inherently low temperature systems, the addition of optical charge control allowed us to observe a room temperature coherence time for the nuclear spin of ionized 31P donors of 39 minutes, orders of magnitude longer than the coherence time of any other solid state qubit [3].

[1] D. Karaskaij et al., Phys. Rev. Lett. 86, 6010 (2001).
[2] M. Steger et al., Science 336, 1280 (2012).
[3] K. Saeedi et al., Science 342, 830 (2013). 

12:30-12:45
Oral: Juha Muhonen
Single-Spin Quantum Coherence Beyond 30 Seconds in Silicon Nanostructure
Co-authors: Juan Pablo Dehollain, Arne Laucht, Fay Hudson, Takeharu Sekiguchi, Kohei Itoh, David Jamieson, Jeffrey McCallum, Andrew Dzurak, Andrea Morello 

Session Chairs
FN

Franco Nori

Chief Scientist & Group Director & Professor, RIKEN & University of Michigan
Professor Franco Nori’s research is in theoretical condensed matter physics and quantum information processing. He has also done research in computational physics, transport phenomena (e.g., of vortices or electrons), energy conversion and solar energy, as well as the dynamics of complex systems. His research work is interdisciplinary and also explores the interface between atomic physics, quantum optics, nano-science, and computing. His... Read More →

Speakers
SR

Sven Rogge

Professor, University of New South Wales
After completing his undergraduate studies at the Universität Karlsruhe in Germany, Sven moved to Stanford University (USA) joining the research group of Douglas D. Osheroff and in 1997 was awarded his PhD in physics. As a postdoctoral researcher at Delft University of Technology (Netherlands), his research focused on atomic-scale electronics with the twofold aim of realising quantum electronics in silicon and establishing atomistic-device... Read More →
ML

Mike L. W. Thewalt

Professor, Simon Fraser University
Michael L. W. Thewalt is a Canadian physicist. He received his BSc from McMaster University in 1972. His MSc and PhD were from the University of British Columbia in the mid-1970s. He teaches at Simon Fraser University and is known for researching semiconductors, especially isotopically enriched silicon.


Monday August 11, 2014 11:30 - 12:45
Room 18CD

12:30

Lunch On Your Own
There are many restaurants & amenities within just a few blocks of the Austin Convention Center.
View this map to see the nearby options

Monday August 11, 2014 12:30 - 14:00
Assorted

14:00

Complex Oxides I
Click to view Abstracts

14:00-14:30
Invited: Gertjan Koster

Crystal Symmetry & Properties of Low Dimensional Epitaxial Oxides; Interfaces & Superlattices

In complex oxide materials the occurrence of ferroelectric, ferromagnetic or other properties are for the most part determined by the detailed oxygen coordination of metal cations. More specifically, in the case of perovskite-type materials ABO3, where A and B are metal cations, by the BO6 octahedral orientations and rotations. At interfaces in epitaxial oxide hetero structures, for example magnetic junctions or capacitive structures, this oxygen sub-lattice is found to be different from its bulk counterpart.

I will discuss examples of oxygen sub-lattice engineering achieved by controlled thin film parameters such as digital thickness variation, polar discontinuous interfaces or the insertion of oxide buffer layers that influence the perovskite-type BO6 sub-lattice, in particular when using superlattice structures to enhance the effect in terms of measurability. The effects of such thin film parameters on the structure and properties of various model systems are subsequently studied by in situ characterization techniques, high resolution scanning transmission electron microscopy or other spectroscopic techniques (XAS, RIXS, PNR etc.). Often-encountered problems due to dead-layer effects, which normally hamper many ferromagnetic or ferroelectric functional devices, could be tackled this way. More importantly, besides improving the functionality of heterostructure devices one might expect to find surprising properties not found in the bulk.

Keywords: thin films, perovskites, transition metal oxides, crystal symmetry

14:30-14:45
Oral: Chungwei Lin
Electron Correlation in Oxygen Vacancy in SrTiO3
Co-authors: Alexander A. Demkov

14:45-15:00
Oral: Nicholas Plumb
Insights into the Electronic Structure of Surface & Interface Conducting States of SrTiO3(001)


15:00-15:15
Oral: William Rice
Persistent Optically Induced Magnetism in Oxygen-Deficient Strontium Titanate
Co-authors: Palak Ambwani, Michael Bombeck, Joseph Thompson, Gregory Haugstad, Chris Leighton, Scott Crooker

15:15-15:30
Oral: Alexandre Ramalho Silva
LaAlO3 & SrTiO3: Defects at the Surfaces & the Interface
Co-authors: Gustavo Dalpian

15:30-15:45
Oral: Ming Xie
Itinerant Electron Ferromagnetism at GdTiO3/SrTiO3/GdTiO3 Quantum Well Heterostructure
Co-authors: Allan MacDonald

15:45-16:00
Oral: Duane McCrory
Paramagnetic Defects in Variously Processed Strontium Titanate & Lanthanum Aluminate Thin Film Structures
Co-authors: Patrick Lenahan, Alexander Demkov, Andy O’Hara, Miri Choi, Agham Posadas

Session Chairs
JV

Jeroen van den Brink

Director of the Institute for Theoretical Solid State Physics, IFW Dresden
Jeroen van den Brink is a theoretical condensed matter physicist, director at the Leibniz Institute for Solid State and Materials Research, IFW Dresden and professor at the Dresden University of Technology in Germany. Van den Brink is known for contributions to the field of strongly correlated materials, in particular for proposals on magnetic and orbital ordering and mechanisms for multiferroicity. | | He obtained a PhD from the University of... Read More →

Speakers
GK

Gertjan Koster

Associate Professor, University of Twente
After finishing a master degree on Applied Physics Dr. Ir. G. (Gertjan) Koster performed his PhD on “Artificial layered complex oxides by pulsed laser deposition“, which he defended on September 9th, 1999 advised by prof. dr. H. Rogalla. In that same year he moved to California to join the Kapitulnik-Geballe-Beasley (KGB) group at the Geballe Laboratory for Advanced Materials, Stanford University, briefly as a visiting scholar... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 19A

14:00

Organic Semiconductors
Click to view Abstracts

14:00-14:15
Oral: Lixia Zhang
Magnetic Field Effect on Polaron Detrapping in Organic Semiconductor Devices
Co-authors: Ya Yi, Chi Mei Chow, Baikui Li, Hongtao He, Kok Wai Cheah, Jiannong Wang

14:15-14:30
Oral: Feilong Liu
Analytical Theory of Magneto-Electroluminescence in Organic Heterojunction Light-Emitting Devices
Co-authors: Scott Crooker, Paul Ruden, Darryl Smith

14:30-15:00
Invited: Clara Santato

Towards Electrolyte Gated Organic Light Emitting Transistors: Sub-1 V Polymer Transistors with High-Surface Area Carbon Gate Electrodes

Organic Thin Film Transistors (OTFTs) are key elements for low-cost flexible electronics. The replacement of conventional gate dielectrics (e.g. SiO2) with electrolytes as the gating medium is an effective approach to induce high charge carrier densities in the transistor channel upon application of relatively low electric biases, in the order of 1.5 - 4 V [1]. Further lowering of the operating voltage of electrolyte-gated transistors is possible by incorporating in the device structure low-cost, high-surface area carbon gate electrodes.

We report on electrolyte-gated transistors based on light-emitting thin films of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) as the organic semiconductor, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide [EMIm][TFSI] as the ionic liquid gating medium, and high-surface area carbon gate electrodes operating at voltages lower than 1 V [2].

Electrochemical impedance spectroscopy and cyclic voltammetry measurements show the electrochemical stability of the high-surface area carbon gate electrode during transistor operation. Such stability dispenses the use of reference electrodes, permits to monitor the electrical potential in the transistor channel, and ensures the compatibility of the applied voltages with the electrochemical stability window of the electrolyte. These results, together with the stability of the photoluminescence signal observed from the polymer film upon application of an electrical bias to the gate electrode, are encouraging findings en route towards electrolyte gated light-emitting transistors.

[1] a) S. H. Kim, K. Hong, Wei Xie, K. Hyung Lee, S. Zhang, T. P. Lodge, C. D. Frisbie 25, 1822-1846, 2013. b) G. Tarabella, F. M. Mohammadi, N. Coppedé, F. Barbero, S. Iannotta, C. Santato and F. Cicoira, Chemical Science, 4, 1395-1409, 2013.
[2] M. Lazzari, C. Arbizzani, F. Soavi, M. Mastragostino, Supercapacitors, Wiley, 2013.

Co-authors: Jonathan Sayago, Xiang Meng, Fabio Cicoira, Francesca Soavi

15:00-15:15
Oral: Stefan Engelbrecht
Hole Transport in Pentacene Thin Films Probed by Terahertz Spectroscopy
Co-authors: Markus Prinz, Thomas Arend, Roland Kersting

15:15-15:30
Oral: Scott Crooker
Magnetic Field Effects in Organic Semiconductor LEDs: Revealing Spin Interactions Between Carriers & Nuclei
Co-authors: Megan Kelley, Nick Martinez, Wanyi Nie, Aditya Mohite, Darryl Smith, Sergei Treitak, Feilong Liu, Paul Ruden

15:30-15:45
Oral: Alexandr Fonari
The Impact of Exact Exchange Energy in Describing the Charge-Transport Properties in Organic Charge-Transfer Semiconductors 
Co-authors: Christopher Sutton, Jean-Luc Bredas, Veaceslav Coropceanu

15:45-16:00
Oral: Kurt Hingerl
Spectroscopic Ellipsometry - An Insight in the Optical Properties of Pristine/Do 
Co-authors: Jacek Gasiorowski 

Session Chairs
NM

Noa Marom

Assistant Professor, Tulane University
Noa Marom received her Ph.D. in 2010 from the Weizmann Institute of Science in her home country of Israel. She was awarded the Shimon Reich Memorial Prize of Excellence for her thesis on describing the electronic structure of organic semiconductors from first principles. She then pursued postdoctoral research at the Institute for Computational Engineering and Sciences (ICES) at the University of Texas at Austin. In 2013 she joined the Physics and... Read More →

Speakers
CS

Clara Santato

École Polytechnique de Montréal
Clara Santato (Ph.D. in Chemistry, University of Geneva) is tenured professor at the Department of Engineering Physics of Ecole Polytechnique in Montreal (EPM). Prior to her appointment, she worked as permanent research scientist for the National Research Council of Italy. She has been visiting scientist at the National Renewable Energy Laboratory and at Purdue University. Her research background is in Organic Electronics (design, fabrication... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 19B

14:00

Quantum Hall Effects II
Click to view Abstracts

14:00-14:30
Invited: Jurgen Smet
Unconventional Even Denominator Fractional Quantum Hall Physics in ZnO Two-Dimensional Electron Systems

Until recently the study of even denominator fractional quantum Hall states (FQH) was the exclusive privilege of the III-V semiconductor community. In particular, the observation of FQH-states in the second Landau level at filling 5/2 and 7/2 in GaAs based 2D electron systems has unleashed a flood of theoretical as well as experimental effort due to their exotic properties. These ground states are in essence thought to be p-wave superconductors with zero energy Majorana modes as excitations. Here we report the observation of such physics outside of the realm of III-V heterostructures in the emergent ZnO 2D electron system. It not only exhibits a robust FQH-state at filling 7/2, but also at unconventional fillings. There is for instance an incipient 9/2 state in perpendicular field and a fully resolved 3/2 FQH-state emerges when tilting the sample. The latter is believed to also be a genuine single component incompressible ground state of paired composite fermions analogous to the 5/2 state in GaAs. Even though the ZnO quality can still not compete with GaAs, the use of ZnO for investigating even denominator FQH physics offers a powerful additional degree of freedom. Because the Zeeman splitting and the cyclotron energy are comparable, it is possible at a fixed filling to alter the orbital character of the partially filled level at the Fermi energy by tilting the sample. The orbital character of this uppermost level plays a crucial role for the development and stability of even denominator as well as other FQH-states. 

Co-authors: Joe Falson, Denis Maryenko, Benedikt Friess, Ding Zhang, Yusuke Kozuka, Atsushi Tsukazaki, Masashi Kawasaki

14:30-14:45
Oral: Xiao Li
Nematic Valley Ordering in SnTe in the Quantum Hall Regime
Co-authors: Fan Zhang, Qian Niu, Allan MacDonald

14:45-15:00
Oral: B. A. Piot

Resistive NMR in the Vicinity of the ν = 1 Quantum Hall State: Coexistence of Partially Polarized & Un-Polarized Electron Subsystems
Co-authors: W. Desrat, S. Kramer, D. K. Maude, Z. R. Wasilewski, M. Henini, R. Airey

15:00-15:15
Oral: Trevor David Rhone

Direct Probing of Local Density Fluctuations in Disordered Quantum Hall Systems Using NMR
Co-authors: Koji Muraki

15:15-15:30
Oral: Rebeca Ribeiro

Unusual Backscattering Between Quantum Hall Edge States in CVD Graphene
Co-authors: Zheng Han, Alessandro Cresti, Aron Cummings, Stephan Roche, Vincent Bouchiat, Sebastien Ducourtieux, Felicien Schopfer, Wilfrid Poirier

15:30-15:45
Oral: Shota Shirai

Filling Factor Dependence of AC-Electric-Field-Induced Nuclear Spin Resonance
Co-authors: Toru Tomimatsu, Katsushi Hashimoto, Ken Sato, Katsumi Nagase, Yoshiro Hirayama

15:45-16:00
Open 

Session Chairs
MH

Mohammad Hafezi

Assistant Professor, University of Maryland Fellow, Joint Quantum Institute, University of Maryland
Mohammad Hafezi received his diplome d'ingenieur from Ecole Polytechnique (Paris) in 2003 and his Ph.D. from Physics Department at Harvard University in 2009. He moved to the Joint Quantum Institute (NIST/University of Maryland) as a research associate and since 2012 he is a research faculty. His research is at the interface of theoretical quantum optics and condensed matter physics with a focus on fundamental physics and applications in... Read More →

Speakers
JS

Jurgen Smet

Max Planck Institute for Solid State Research
Jurgen Smet is heading the independent research group Solid State Nanophysics at the Max Planck Institute for Solid State Research. He graduated with a Master degree in Electrical Engineering from the Catholic University of Leuven in 1990. In 1994, he received his Ph. D. in Electrical Engineering and Computer Science from the Massachussets Institute of Technology, Cambridge U.S.A, with research on intrawell and interwell intersubband... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 16A

14:00

Quantum Optics, Nanophotonics I
Click to view Abstracts

14:00-14:15
Oral: Su-Hyun Gong
Strong Purcell Enhancement by Deterministic Plasmonic Nanofocusing in Single Quantum Dot

Co-authors: Je-Hyung Kim, Young-Ho Ko, Christophe Rodriguez, Jonghwa Shin, Yong-Hee Lee, Le Si Dang, Xiang Zhang, Yong-Hoon Cho

14:15-14:30
Oral: 
Kobi Cohen
Highly Directional Emission of Photons from Nanocrystal Quantum Dots Positioned on Circular Plasmonic Lens Antennas
Co-authors: Moshe Harats, Nitzan Livneh, Shira Yochelis, Yossi Paltiel, Ronen Rapaport

14:30-14:45
Oral: 
T. Sverre Theuerholz
Theory of Quantum Emission Statistics of Nanoplasmonic Hybrid Systems
Co-authors: Michael Gegg, Andreas Knorr, Marten Richter

14:45-15:00
Oral: 
Fabrice Laussy
Violation of Cauchy-Schwarz & Bell's Inequalities in the Light Emitted by a Quantum Dot
Co-authors: Carlos Sánchez-Muñoz, Elena del Valle, Carlos Tejedor

15:00-15:30
Invited: Bart de Nijs
Squeezing Light into Nanogaps: Plasmonics in the Sub-nm & Quantum Domains


Coupling between plasmonic nano-components generates strongly red-shifted resonances combined with intense local field amplification on the nanoscale. This allows directly seeing molecules as well as excitations in semiconductors. We have recently explored plasmonic coupling which can be tuned dynamically, through reliable bottom-up self-assembly. The crucial aspect of these systems is the extreme sensitivity to separation, and how quantum tunneling starts to be directly seen at room temperature in ambient conditions. We recently demonstrated how quantum plasmonics controls the very smallest space that light can be squeezed into. We also demonstrate the possibility to track few molecules using the extreme enhancements. We show how the new generation of 2D semiconductors can couple to such nano-scale gaps utilizes our nanoparticle on mirror geometry.

[1] Nature 491, 574 (2012); Revealing the quantum regime in tunnelling plasmonics.
[2] Nano Letters 10, 1787 (2010); Actively-Tuned Plasmons on Elastomeric Au NP Dimers.
[3] ACS Nano 5, 3878 (2011); Precise sub-nm plasmonic junctions within Au NP assemblies.
[4] Nano Lett 11, 5339 (2011); Surface-Enhanced CARS on Nanostructured Au Surfaces.
[5] Nano Lett 13, 5033 (2013); Controlling sub-nm plasmonic gaps using graphene.

Co-authors: Lindsey Ibbotson, David Leipold, Erich Runge, G. Vijaya Prakash, Jeremy Baumberg

15:30-15:45
Oral: 
Chris Phillips
Quantum Metamaterials & Strongly-Coupled Systems; New Physics from Semiconductor Nano-structures
Co-authors: Alex Bak, Francis Murphy, Hemmel Amrania, Vincenzo Giannini, Simone De Liberato, Stefan A. Maier

15:45-16:00
Oral: 
David Colas
Spacetime Rabi Oscillations
Co-authors: Fabrice Laussy

Session Chairs
LV

Luis Viña

Autónoma University

Speakers
BD

Bart de Nijs

University of Cambridge


Monday August 11, 2014 14:00 - 16:00
Room 18AB

14:00

Spintronics & Spin Phenomena I
Click to view Abstracts

14:00-14:30
Invited: Olaf van 't Erve

A Graphene Solution to Conductivity Mismatch: Spin Injection from Ferromagnetic Metal / Graphene Tunnel Contacts into Silicon

Electrical transport in graphene, a single sheet of carbon atoms in a hexagonal lattice, has quickly become one of the most studied topics in materials science and condensed matter physics. While these efforts have focused on graphene's extraordinary in-plane charge carrier mobility and conductivity, the out-of-plane charge and spin transport of this material have largely been ignored. To explore the out of plane transport properties, we will use two examples. First we show how a single layer of graphene can be used as an atomically-thin tunnel barrier in a magnetic tunnel junction preserving the spin polarization of the electrons while providing thickness control. We have measured out-of-plane transport through a single layer of graphene by fabricating metal-graphene-metal junctions using two ferromagnetic metals, in an MTJ structure. We observe spin-polarized electron tunneling clearly measureable even above room temperature. Secondly, we demonstrate the use of graphene as a tunnel barrier for spin injection into a Silicon channel. Here the graphene provides a low resistance tunnel barrier, impervious to metal diffusion into Silicon while preserving its spin polarizing properties, unattainable by more conventional oxide barriers. These results demonstrate the unique out of plane transport properties of graphene and enable realization of semiconductor spintronic devices such as spin-based transistors, logic and memory.

14:30-14:45
Oral: Tomonori Arakawa
Observation of Spin Shot Noise
Co-authors: Junichi Shiogai, Mariusz Ciorga, Martin Utz, Dieter Schuh, Makoto Kohda, Junsaku Nitta, Dominique Bougeard, Dieter Weiss, Teruo Ono, Kensuke Kobayashi

14:45-15:00
Oral: Felix Hernandez
Resonant Optical Reorientation & Amplification of the Current-Induced Spin Polarization in a Two-Dimensional Electron System
Co-authors: Leonardo Nunes, Gennady Gusev, Askhat Bakarov

15:00-15:15
Oral: Andrzej Skierkowski
Doping Induced Rashba Spin Splitting in Graphene & BN
Co-authors: Mikolaj Sadek, Jacek Majewski

15:15-15:30
Oral: Caio Lewenkopf
Spin Relaxation by Local Magnetic Moments in Disordered Graphene Sheets
Co-authors: Vladimir Miranda

15:30-15:45
Oral: Andrei Kudriavtcev
Spin Interference in Edge Channels of Silicon Nanosandwiches
Co-authors: Nikolay Bagraev, Leonid Klyachkin, Anna Malyarenko, Vladimir Mashkov

15:45-16:00
Oral: Yuki Wakabayashi
Properties of Group-IV Based Ferromagnetic Semiconductor GeFe: Growth Temperature Dependence, Location of Fe Atoms, & its Relevance to the Magnetic Properties
Co-authors: Yoshisuke Ban, Shinobu Ohya, Masaaki Tanaka  

Session Chairs
AS

Andrew Sachrajda

National Research Council Canada

Speakers
OV

Olaf van 't Erve

Research Scientist, Naval Research Laboratory
Olaf M.J. van ‘t Erve received his B.S., M.S., and his Ph.D. degree in electrical engineering, in 1995, 1998 and 2002 respectively, from hogeschool Enschede and the University of Twente, the Netherlands. He started his career in spintronic devices with his Ph.D. research that focused on spin-polarized hot-electron transport through metals. Since then he has done his spintronic research at the Naval Research Laboratory in Washington DC, USA... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 18CD

14:00

Transport in Heterostructures I
Click to view Abstracts

14:00-14:30
Invited: Gloria Platero

Superexchange Transport & Blockade in Triple Quantum Dots

Quantum mechanics allows for superpositions of indirectly coupled states even if the intermediate states are far in energy. This is done via superexchange: higher order transitions in which the energetically forbidden intermediate states are only virtually occupied. The recently achieved control and tunability of triple quantum dots open the possibility to investigate phenomena relying on quantum superpositions of distant states mediated by tunneling. We discuss recent experiments in triple dots where clear evidence of long range transport is found. Superexchange is responsible for the indirect spin-dependent coupling of the two outer dots, mediated by virtual transitions through the middle one. Long range electron transfer is manifested as sharp current resonances at the degeneracy points of states with left-right symmetric charge distributions [1,2]. The transitions can take two paths: two electrons in different dots tunnel simultaneously [1] or a single electron tunnels twice [2]. In this last case a delocalized electron between the left and right dot transfers the spin state from one end to the other. We also analyze a configuration where two paths with different virtual intermediate states are possible leading to quantum interference. Remarkably, we find conditions where destructive interference of these transitions cancels the transport, what we call superexchange blockade [3].

[1] M. Busl et al., Nature Nanotech. 8, (2013) 261
(2) R. Sánchez et al., Phys. Rev. Lett. 112, 176803 (2014)
(3) R. Sánchez et al., Phys. Rev. B 89, 161402(R) (2014)

14:30-14:45
Oral: Shinichi Amaha
LO-Phonon Assisted Coherent Tunneling in Vertically Coupled Double Quantum Dots
Co-authors: Rin Okuyama, Tsuyoshi Hatano, Mikio Eto, Seigo Tarucha

14:45-15:00
Oral: 
Jason C. H. Chen
Electron Transport in a Double Quantum Dot Induced by a Surface Acoustic Wave Cavity Mode
Co-authors: Reo Kosaka, Masayuki Hashisaka, Koji Muraki, Toshimasa Fujisawa

15:00-15:15
Oral: 
Natalia Stepina
Transport & Magnetotransport in One-Dimensional Tunnel Coupled Quantum Dot Chains
Co-authors: Zhanna Smagina, Vitalii Valkovskii, Anatolii Dvurechenskii

15:15-15:30
Oral: 
Bahram Ganjipour
Excited State Spectrum of a p-type GaSb/InAs Core/Shell Nanowire Quantum Dot
Co-authors: B. Mattias Borg, Lars-Erik Wernersson, Lars Samuelson, H. Q. Xu, Claes Thelander

15:30-15:45
Oral: 
Andrei Sergeev
Adaptable Quantum Dot Nanomaterials with Controllable Kinetics
Co-authors: Vladimir Mitin, Nizami Vagidov, Kimberly Sablon, John Little, Kitt Reinhardt

15:45-16:00
Oral: 
Michihisa Yamamoto
Transmission Phase through a Quantum Dot Near Crossover from Single-Level to Multi-Level Transport
Co-authors: Shintaro Takada, Christopher Bauerle, Andreas Wieck, Seigo Tarucha

Session Chairs
SR

Sven Rogge

Professor, University of New South Wales
After completing his undergraduate studies at the Universität Karlsruhe in Germany, Sven moved to Stanford University (USA) joining the research group of Douglas D. Osheroff and in 1997 was awarded his PhD in physics. As a postdoctoral researcher at Delft University of Technology (Netherlands), his research focused on atomic-scale electronics with the twofold aim of realising quantum electronics in silicon and establishing atomistic-device... Read More →

Speakers
GP

Gloria Platero

Instituto de Ciencia de Materiales de Madrid
Gloria Platero did her PhD at the Autonomous University of Madrid. She then spent two years at the Max Planck Institute for High Magnetic Fields in Grenoble (France) as a postdoctoral researcher. Afterwards she got a permanent position at the Solid State Institute of the Spanish research council (CSIC). At present, she is a Research Professor at the Material Science Institute of Madrid (CSIC). | | She is the head of the research group in Madrid... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 17A

14:00

Two Dimensional Systems Beyond Graphene I
Click here to view Abstracts

14:00-14:15
Oral: Marcos Verissimo-Alves
Group-IV Nanosheets with vacancies: A Tight-Binding Extended Huckel Study

Co-authors: Adriano de Souza Martins

14:15-14:45
Invited: Guy Le Lay

Silicene & Germanene, Graphene's Cousins

Silicene and germanene are novel allotropes of silicon and germanium and the counterparts of graphene [1]. They are predicted to be two-dimensional topological insulators, respectively up to about 10K and nearly room temperature. The mobilities of their charge carriers are expected to be very high, potentially exceeding those of graphene for the latter. After describing our realization of epitaxial single [2] and multilayer silicene on silver (111) substrates [3], I will present hints of the synthesis of epitaxial germanene, a novel germanium allotrope that does not exist in nature [4]. I will further review fundamental results on these novel two-dimensional materials, which might open the way to tantalizing applications.

[1] G. Brumfiel, Nature, 495, 153 (2013); Nature 485, 9 (2012).
[2] P. Vogt et al., Phys. Rev. Lett., 108, 155501 (2012).
[3] P. Vogt et al., Appl. Phys. Lett., 104, 021602 (2014).
[4] A. Resta et al., to be published.

14:45-15:00
Open


15:00-15:15
Oral: Nilanthy Balakrishnan

Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
Co-authors: G.W. Mudd, S. A. Svatek, T. Ren, A. Patanè, O. Makarovsky, L. Eaves, P. H. Beton, Z. D. Kovalyuk, G. V. Lashkarev, Z. R. Kudrynskyi  and A. I. Dmitriev

15:15-15:30
Oral: Yukihiro Harada

Two-Dimensional Electronic States of Epitaxial Nitrogen Atomic Sheet in GaAs Grown by Nitrogen Delta-Doping Technique
Co-authors: Takeshi Baba, Takashi Kita

15:30-15:45
Oral: Steven Koenig

Electric Field Effect in Ultrathin Black Phosphorus 

15:45-16:00
Open 

Session Chairs
MC

Mei-Yin Chou

Georgia Tech

Speakers
GL

Guy Le Lay

Professor, Université d'Aix-Marseille
Prof. Guy Le Lay is Full Professor of Physics since 1981. He has reached the topmost level attainable in France in 2007 (Classe exceptionnelle 2). He has been for several years a member of the Comité National des Universités and was for five years President of the regional section of the French Physical Society. Prof. Le Lay is a recognized specialist of Nanoscience, as well as an expert in Synchrotron Radiation. During his... Read More →


Monday August 11, 2014 14:00 - 16:00
Room 16B

14:00

Material Structure I
Click here to view Abstracts

14:00-14:15
Open


14:15-14:30
Oral: 
Steffen Bieker

Polytypism in ZnSe Nanowires Revealed by Photoluminescence Excitation Spectroscopy of Embedded Single (Zn,Cd)Se Quantum Dots

Co-authors: Rebekka Pfeuffer, Tobias Kiessling, Nadezda Tarakina, Claus Schumacher, Wolfgang Ossau, Laurens W. Molenkamp, Grzegorz Karczewski

14:30-15:00
Invited: Zhihong Chen

Optimizing Spin-Transfer Torque in Graphene Spin Devices

Graphene is an ideal channel material due to its long spin diffusion length, gate-tunable carrier density, and high carrier mobility. However, to further develop a graphene-based spin logic, spin transfer torque needs to be demonstrated in graphene devices to show that spin information can be communicated to the outputs. The first experimental measurement of spin transfer torque in graphene lateral non-local spin valve devices has been reported by us. Assisted by an external magnetic field, the magnetization reversal of the ferromagnetic receiving magnet is induced by pure spin diffusion currents from the input magnet. The magnetization switching is reversible between parallel and antiparallel configurations, depending on the applied charge current polarity. In this talk, I will show a new graphene spin device design to improve the spin absorption at the output magnet. The measured nonlocal spin valve signal has lower noise and its magnitude is comparable to a conventional graphene spin device. More importantly, the critical spin torque current density is greatly reduced.

15:00-15:15
Oral: Laurent Pedesseau

Hybrid Perovskites for Solar Cells: A Change of Paradigm Toward Conventional Semiconductors
Co-authors: Alain Roland, Claudine Katan, Jacky Even

15:15-15:30
Oral: 
Ruediger Schott

Focused Ion Beam Induced Growth of Single III-V Nanowires on Arbitrarily Arranged Sites

Co-authors: Sven Scholz, Dirk Reuter, Arne Ludwig, Andreas D. Wieck

15:30-15:45
Oral: Alejandro R. Goni

Strain Engineering in Micromachined Germanium Epitaxial Layers
Co-authors: Pablo O. Vaccaro, Daiki Sodeoka, Hideki Kuruma, Masahiro Yoshimoto, María Isabel Alonso, Miguel Garriga

15:45-16:00
Oral: 
Gintare Statkute

Semiconductor Epitaxy on the Metals
 

16:00-16:15
Oral: 
Marco Felici

Berry-Phase Translation Effect in Strain-Engineered Hydrogenated Dilute Nitrides: A Novel Approach to X-Ray Photonics
  
Co-authors: Giorgio Pettinari, Simone Birindelli, Michela Fratini, Antonio Polimeni, Luisa Barba, Annamaria Gerardino, Luca Businaro, Andrea Notargiacomo, Alessia Cedola, Gaetano Campi, Silvia Rubini, Faustino Martelli, Mario Capizzi 

Session Chairs
LW

Lars-Erik Wernersson

Professor & Nanoelectronics Research Group Director, Lund University
Lars-Erik Wernersson is directing a research group in Nanoelectronics in Lund working with applications of nanotechnology in IT. He has activities both related to nanoscience at the Physics Department and to hardware implementation at the Electrical- and Information Technology Department. He has been scientific coordinator and co-PI in several major research programs at either department, for instance Quantum Materials (SSF), Nano-Science for... Read More →

Speakers
ZC

Zhihong Chen

Associate Professor, Purdue University
Zhihong Chen received her B.S. degree in physics from Fudan University in 1998, and her Ph.D. degree in physics from the University of Florida in 2003. After two years of postdoctoral research at IBM T.J. Watson research center, she became a research staff member in the Physical Science Department. Her research focused on design and fabrication of high performance carbon based devices and circuits. In 2008, she was appointed as the manager of the... Read More →


Monday August 11, 2014 14:00 - 16:15
Room 17B

18:00

Speakers Dinner
By invitation only. Hilton Austin Hotel. 4th Floor, Room 406.

Contact: Jim Chelikowsky (jrc@utexas.edu).

Monday August 11, 2014 18:00 - 20:00
Assorted
 
Tuesday, August 12
 

07:30

Complimentary Coffee & Tea
Complimentary coffee and tea served outside Ballroom D. 

Tuesday August 12, 2014 07:30 - 09:30
Ballroom D – Outside

08:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts


Tuesday August 12, 2014 08:00 - 17:30
Ballroom D – Outside

08:30

Electron Devices & Applications I
Click here to view Abstracts

8:30-9:00
Invited: Dennis M. Newns
The Piezoelectronic Transistor: Progress & Expectations

Despite the Mooreís Law decrease in CMOS transistor scale, computer clock speeds are now power limited due to freezing of voltage scaling. We describe a new digital switch, the PiezoElectronic Transistor (PET) [1], aimed at circumventing the speed and power limitations of the CMOS transistor. In PET operation an electrical input is transduced into an acoustic pulse by a piezoelectric (PE) actuator, which, in turn, drives a pressure driven insulator-to-metal transition in a piezoresistive (PR) channel, switching on the device. Theory and simulation, based on bulk material properties, predictthat PETs can operate at about one-tenth the present voltage of CMOS technology, and 100 times less power, while running at multi-GHz clock speeds. CMOS-like computer architectures, such as a simulated adder, can be fully implemented. Thus PET technology offers greener or higher compute power options for switching logic at scales from handheld to supercomputer. Materials development for PE and PR thin films and a successful fabrication scheme, are key. We describe progress in developing two generations of PET devices as steps towards realizing this agenda.

[1] D.M. Newns, B.G. Elmegreen, X.-H. Liu, G.J. Martyna, Adv. Mat.. 24 3672 (2012); D.M. Newns, B.G. Elmegreen, X.-H. Liu, G.J. Martyna, J. Appl. Phys.111, 084509 (2012).

9:00-9:15
Oral: Dax M. Crum

Novel Quantum-Corrected Semi-Classical Ensemble Monte Carlo Simulator for Nano-Scale III-V In0.47Ga0.53As Tri-Gate FinFETs
Co-authors: Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee

9:15-9:30
Oral: Svetlana Vitusevich

Switching of Scattering Mechanism by Gate Coupling Effect
Co-authors: Sergii Pud, Jing Li, Mykhaylo Petrychuk, Andreas Offenhaeusser

9:30-9:45
Oral: Stanko Tomic

Optimisation of Biexciton Binding Energy in CdSe/CdTe Core/Shell QD's for MEG
Co-authors: Jacek Miloszewski, Tom Walsh, David Binks

9:45-10:00
Oral: Fernando Gonzalez-Zalba

The Sisyphus Impedance at the Zero Dimensional Limit
Co-authors: Sylvain Barraud, Andreas C. Betz

10:00-10:15
Oral: Samson Mil’shtein

SiGe HBT with Quantum Well Base
Co-authors: John Palma, Toshihiko Oka

10:15-10:30
Open 

Session Chairs
Speakers
DM

Dennis M. Newns

IBM Research Center
Dr. Newns received his Ph.D. degree in physical chemistry from Imperial College, London, in 1967. He subsequently held research positions at the University of Chicago and Cambridge University, and then held academic positions at Imperial College until joining the research staff of IBM in 1986. Dr. Newns’ research interests, primarily in condensed matter, include surface science, the Kondo effect and heavy Fermion systems, high-temperature... Read More →


Tuesday August 12, 2014 08:30 - 10:30
Room 19B

08:30

Material Structure II

Click here to view Abstracts

8:30-8:45

Oral: Hermann Detz
Atomistic Modeling of Bond Lengths in Ternary III-V Semiconductor Alloy
Co-authors: Gottfried Strasser

8:45-9:00
Oral: Naoki Matsushima
First Principles Study on X-Ray Photoelectron Spectroscopy Binding Energies of Nitrogen in Silicon Carbide
Co-authors: Jun Yamauchi

9:00-9:30
Invited: Yanfa Yan
Physics of Grain Boundaries in Polycrystalline Photovoltaic Semiconductors

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that the efficiencies of these polycrystalline solar cells can reach so high even these thin-films contain grain boundaries (GBs), which are considered to be nonradiative recombination centers for carriers. In the past decade, we have studied the physics of GBs in polycrystalline photovoltaic semiconductors including Si, CdTe, CuInSe2 (CIS), and Cu2ZnSnS4 (CZTS) using a combination of state-of-the-art density-functional theory (DFT) and advanced high-resolution electron microscopy. We have revealed that intrinsic GBs in CIS produce gap states, which act as nonradiative recombination centers. However, the segregation of CuIn and OSe at GBs can clean the gap states and lead to electrically benign GB behavior. Our results suggest that the defect segregation at GBs could be an important feature for high efficiency CIS-based photovoltaic solar cells and it provides a general guidance for engineering GBs in other chalcogenide polycrystalline, such as CZTS. In CdTe, electron microscopy shows that up to 20% Cl has doped into Te sites within a narrow range (1-2 nm) at the GBs. DFT calculations reveal that GB-localized high concentration Cl doping might invert the GBs to n-type, create p-n junctions along the GBs, therefore separate electron-hole carriers at GBs, and improve the cell efficiency.

9:30-9:45
Oral: Pavel Aseev
High In Content InGaN Layers on Si(111) for Near Infrared Applications
Co-authors: Paul Soto, Prveen Kumar, Victor Gomez, Naveed Alvi, Richard Notzel, Zarko Gacevic, Enrique Calleja

9:45-10:00
Oral: Patrick Sims

A New Class of III-V/Group-IV Semiconductor Alloys Based on Molecular Building Blocks with Bulk Crystal Stoichiometry
Co-authors: Liying Jiang, Toshiro Aoki, Andrew Chizmeshya, John Kouvetakis, Jose Menendez, Patrick Sims

10:00-10:15
Open

10:15-10:30
Oral: Yong-Hyun Kim
Detecting Defects with Thermoelectricity at the Atomic Scale
Co-authors: Eui-Sup Lee, Sanghee Cho, Ho-Ki Lyeo 


Session Chairs
JS

Jurgen Smet

Max Planck Institute for Solid State Research
Jurgen Smet is heading the independent research group Solid State Nanophysics at the Max Planck Institute for Solid State Research. He graduated with a Master degree in Electrical Engineering from the Catholic University of Leuven in 1990. In 1994, he received his Ph. D. in Electrical Engineering and Computer Science from the Massachussets Institute of Technology, Cambridge U.S.A, with research on intrawell and interwell intersubband... Read More →

Speakers
YY

Yanfa Yan

ORSP Endowed Chair, The University of Toledo
Dr. Yan’s Research Group is interested in understanding defect physics in inorganic solar cell materials using the combination of density-functional theory, materials synthesis, and electron microscopy characterization. His group is currently involved in exploring the viability of earth-abundant thin-film solar cells. Prof. Yan’s group is also interested in materials discovery and engineering for H2 production through solar water... Read More →


Tuesday August 12, 2014 08:30 - 10:30
Room 17B

08:30

Quantum Optics, Nanophotonics II
Click here to view Abstracts

8:30-8:45
Oral: Marco Felici
Single Photons on Demand from Novel Site-Controlled GaAsN/GaAsN:H Quantum Dots
Co-authors: Simone Birindelli, Johannes Wildmann, Giorgio Pettinari, Antonio Polimeni, Mario Capizzi, Annamaria Gerardino, Silvia Rubini, Faustino Martelli, Armando Rastelli, Rinaldo Trotta

8:45-9:00
Oral: Clement Jarlov
Effect of Dephasing on the Coupling of Quantum Dot Excitons & Optical Cavities
Co-Authors: Etienne Wodey, Alexey Lyasota, Milan Calic, Pascal Gallo, Alok Rudra, Benjamin Dwir, Elyahou Kapon

9:00-9:30

Invited: Julia Kabuss
Theory of an Optically Driven Quantum Dot Phonon Laser

Recent technological progress in the area of nanophononics and the design of high $Q$ phonon cavities [acoustic nanocavities, nanomechanical oscillators] constitutes the basis for new applications, such as phonon lasers. As an acoustic pendent to the optical lasers, the concept of stimulated emission can be generalized onto phononic systems. As a source of coherent and nonequilibrium phonons, we propose a optically pumped quantum-dot-acoustic cavity system, operated as a phonon laser. Next to a full quantum theory approach [J. Kabuss et al. Phys. Rev. Lett. 109, 054301 (2012)], where we study the statistical properties of the phonon emission, we further develop an effective semiclassical treatment [J. Kabuss et al., Phys. Rev. B, 88, 064305 (2013)]. Deriving analytical formulas for the statistics, phonon number and threshold properties we give an analysis of the operational limits and regimes of such a phonon source. Even though the equations exhibit new contributions, we find a strong resemblance to an incoherently pumped single atom laser exhibiting the typical self-quenching behavior. In contrast to the incoherently pumped atom case, however, a medium pure dephasing as present in the semiconductor case conveniently counteracts this feature.

Co-authors: Alexander Carmele, Andreas Knorr

9:30-9:45
Oral: Thorsten Reichert
Directed Emission from InGaAs Quantum Dots into Guided Photonic Crystal Waveguide Modes: Purcell Effect & Disorder
Co-authors: Stefan Lichtmannecker, Julia Wembacher, Max Bichler, Michael Kaniber, Jonathan J. Finley

9:45-10:00
Oral: Michele Montinaro
Quantum Dot Opto-Mechanics in a Fully Self-Assembled Nanowire
Co-authors: Gunter Wüst, Mathieu Munsch, Yannik Fontana, Eleonora Russo-Averchi, Daniel Rüffer, Martin Heiss, Anna Fontcuberta i Morral, Richard J. Warburton, Martino Poggio

10:00-10:15
Oral: Tomasz Jakubczyk
Inhibition & Enhancement of the Spontaneous Emission of Quantum Dots in Micropillar Cavities with Radial Bragg Reflectors
Co-authors: Helena Franke, Tomasz Smolenski, Maciej Sciesiek, Wojciech Pacuski, Andrzej Golnik, Rudiger Schmidt-Grund, Marius Grundmann, Carsten Kruse, Detlef Hommel, Piotr Kossacki

10:15-10:30
Oral: Mirco Kolarczik
Quantum Coherence Induces Pulse Shape Modification in a Semiconductor Optical Amplifier at Room Temperature
Co-authors: Nina Owschimikow, Julian Korn, Benjamin Lingnau, Yücel Kaptan, Dieter Bimberg, Eckehard Schöll, Kathy Lüdge, Ulrike Woggon 

Session Chairs
CP

Chris Phillips

Imperial College London

Speakers
JK

Julia Kabuss

Institute für Theoretische Physik, Technische Universität Berlin


Tuesday August 12, 2014 08:30 - 10:30
Room 18AB

08:30

Spintronics & Spin Phenomena II
Click here to view Abstracts

8:30-9:00
Invited: Hanan Dery

Spin Transport in 2D Membranes

Group theory is a powerful tool to investigate spin-dependent transport and optical properties. It allows one to identify important processes and to define the physics with a minimal set of material dependent parameters. In this talk, I will present our recent findings for the spin transport in 2D membranes including monolayer transition-metal dichalogonides, graphene [1,2], and silicene. I will focus on spin flips induced by flexural phonons and show that the spin relaxation is ultrafast for electrons in free-standing membranes while being mitigated in supported membranes. This behavior is universal in 2D membranes that respect mirror symmetry and it leads to a counterintuitive inverse relation between mobility and spin relaxation. The findings will be compared with the case of graphene.

[1] Y. Song and H. Dery, "Transport Theory of Monolayer Transition-Metal Dichalcogenides," Phys. Rev. Lett. 111, 026601 (2013).
[2] T. Cheiwchanchamnangij, W. R. L. Lambrecht, Yang Song, and Hanan Dery, "Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene,"Phys. Rev. B 88, 155404 (2013).

9:00-9:15
Oral: Sangyeop Lee

Doping-Controlled Interlayer Exchange Coupling in Ferromagnetic Semiconductor GaMnAs/GaAs Multilayers
Co-authors: Sunjae Chung, Taehee Yoo, Hakjoon Lee, Sanghoon Lee, Xinyu Liu, Jacek Furdyna

9:15-9:30
Oral: Jianhua Zhao

Ferromagnetic Interfacial Interaction & Magnetic Proximity Effect in Co2FeAl/(Ga,Mn)As Bilayers

9:30-9:45
Oral: Takafumi Akiho

Efficient Dynamic Nuclear Polarization Using Electrical Spin Injection from a Half-Metallic Spin Source
Co-authors: Yuya Ebina, Hong-xi Liu, Masafumi Yamamoto, Tetsuya Uemura

9:45-10:00
Oral: Christopher Morrison

Zero-Field Spin Splitting in a High Mobility Ge 2D Hole Gas
Co-authors: Maksym Myronov, Piotr Wi´sniewski, Stephen Rhead, David Leadley

10:00-10:15
Oral: Vanessa Sih

Electrical Orientation of Electron & Nuclear Spins in Semiconductors
Co-authors: B. M. Norman, C. J. Trowbridge, D. D. Awschalom

10:15-10:30
Open

Session Chairs
VS

Vanessa Sih

University of Michigan

Speakers
HD

Hanan Dery

Associate Professor of Electrical & Computer Engineering, University of Rochester
Hanan Dery, a specialist in the emerging field of spintronics, joined the Department of ECE in July, 2007. Previously, he was a Postdoctoral Associate in Lu Sham's group in the Department of Physics, University of California San Diego (UCSD). During this time, he worked on spintronics, seeking ways to integrate information based on electron spin into semiconductors. Dery earned his PhD in Electrical Engineering from Technion-Israel Institute of... Read More →


Tuesday August 12, 2014 08:30 - 10:30
Room 18CD

08:30

Transport in Heterostructures II
Click here to view Abstracts

8:30-9:00

Invited: Hermann Sellier
Wigner Crystallization in Quantum Point Contacts Revealed by Scanning Gate Microscopy

In addition to quantized conductance plateaus at multiples of 2e²/h, quantum point contacts in 2DEGs often show a shoulder at 0.7(2e²/h), which cannot be explained by single-particle theories. At very low temperature, this 0.7 anomaly shades off and a zero-bias anomaly emerges. Different theoretical models have been proposed but none is fully satisfactory. Here we present new experimental results using a scanning gate microscope to change in-situ the potential landscape with a sharp polarized tip. Approaching the tip towards the point contact produces an oscillatory splitting of the zero-bias anomaly correlated with large modulations of the 0.7 anomaly. These oscillations cannot be explained by interference effects, and are interpreted as the signature of a many-body localized state induced by strong Coulomb interactions at low electron density. This state is revealed by the Kondo screening from the leads, giving a conductance peak at zero (resp. finite) bias for an odd (resp. even) number of electrons that is tuned by the tip position. Our interpretation is supported by electrostatic simulations showing that the electron density in the contact meets the criterion for 1D Wigner crystallization below the first plateau. It points in the same direction as a recent experiment with six surface gates that gave indications for the presence of emergent localized states. Our result contributes to resolving a complex mesoscopic problem involving strongly interacting electrons in a non-uniform potential landscape.

Co-authors: Boris Brun, Frederico Martins, Sebastien Faniel, Benoit Hackens, Antonella Cavanna, Christian Ulysse, Abdelkarim Ouerghi, Ulf Gennser, Dominique Mailly, Guillaume Bachelier, Serge Huant, Vincent Bayot, Marc Sanquer

9:00-9:15
Oral: Aleksey Kozikov

Inducing & Controlling Aharonov-Bohm Oscillations with a Scanning Gate
Co-authors: Richard Steinacher, Clemens Roessler, Christian Reichl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

9:15-9:30
Oral: Yoshitaka Nishihara

Precise Shot Noise Measurement in a Clean Quantum Point Contact
Co-authors: Teruo Ono, Tomonori Arakawa, Takahiro Tanaka, Shota Norimoto, Kensuke Kobayashi, Thomas Ihn, Clemens Rössler, Klaus Ensslin

9:30-9:45
Oral: Chunlin Yu

Magnetic Field-Enhanced Cooper Pair Co-Tunneling in InSb Nanowire Josephson Quantum Devices
Co-authors: Mingtang Deng, Philippe Caroff, Kimberly Thelander, Hongqi Xu

9:45-10:00
Oral: Scott Dietrich

Dynamics of Quantal Heating of 2D Electrons in Crossed Electric & Quantizing Magnetic Fields
Co-authors: William Mayer, Sergey Vitkalov, Alexey Bykov

10:00-10:15
Oral: Lars Duggen

Bloch-Like Oscillations in Finite Quantum Structures
Co-authors: Morten Willatzen, Benny Lassen, Lok C. Lew Van Yoon

10:15-10:30
Oral: Dmitri Efetov

Andreev Spectroscopy in the Quantum Hall Regime in Bilayer Graphene
Co-authors: Clevin Handschin, Jean-Damian Pillet, Lei Wang, Cory Dean, Philip Kim
 

Session Chairs
SC

Scott Chambers

Materials Sciences Laboratory Fellow, Pacific Northwest National Laboratory
Dr. Chambers is the Technical Group Leader for the PNNL Oxide Epitaxy Group. He has focused on the preparation and properties of model surfaces and interfaces for his entire career. His interests have ranged from metals to conventional Group IV and Group III-V semiconductors to simple and complex oxides. His current interests focus on the effects of doping on the structure and functional properties of epitaxial oxide films of various kinds... Read More →

Speakers

Tuesday August 12, 2014 08:30 - 10:30
Room 17A

08:30

Two Dimensional Systems Beyond Graphene II
Click here to view Abstracts

8:30-8:45

Oral: Bart de Nijs
Exfoliation of Self-Assembled 2D Organic-Inorganic Perovskite Semiconductors
Co-authors: Wendy Niu, Anna Eiden, G. Vijaya Prakash, Jeremy Baumberg

8:45-9:00
Oral: Andor Kormanyos
Spin-Orbit Coupling, Quantum Dots, & Qubits in Monolayer Transition Metal Dichalcogenides 
Co-authors: Viktor Zolyomi, Neil D. Drummond, Guido Burkard

9:00-9:15
 
Oral: Yong-Sung Kim
DFT Study of Charged Defects & Dopants in Single-Layer MoS2 with Finite-Size Supercell Correction
Co-authors: Ji-Young Noh, Hanchul Kim

9:15-9:30
Oral: Gerd Plechinger
Single Layer MoS2: Valley Dynamics & Optics of 2D-Heterostructures
Co-authors: John Mann, Andrés Castellanos-Gomez, Herre van der Zant, Ludwig Bartels, Christian Schüller, Tobias Korn

9:30-9:45
Oral: Saptarshi Das
All 2D Thin Film Transistor on Flexible Substrate
Co-authors: Richard Gulotty, Sumant Anirudha, Andreas Roelofs

9:45-10:00
Oral: Kankan Cong
Magnetic Field, Temperature, & Laser Power Mapping of Superfluorescence from a 2D Electron-Hole System
Co-authors: Jihee Kim, G. Timothy Noe II, Stephen A. McGill, Yongrui Wang, Aleksander K. Wójcik, Alexey A. Belyanin, Junichiro Kono

10:00-10:15
Oral: Stefan Schwarz
Optics of Two-Dimensional Semiconducting Films in Tunable Photonic Microcavities
Co-authors: Scott Dufferwiel, Freddie Withers, Aurelien Trichet, Jason M. Smith, Dimitrii N. Borisenko, Nikolai N. Kolesnikov, Evgeny A. Chekhovich, Maurice S. Skolnick, Dmitry N. Krizhanovskii, Alexander I. Tartakovskii

10:15-10:30
Oral: Alexis Toulouse
Electronic & Optical Properties of Atomically Thin PbI2 Crystals
Co-authors: Benjamin Isaacoff, Guangsha Shi, Marie Matuchova, Emmanouil Kioupakis, Roberto Merlin

Session Chairs
YA

Yoichi Ando

Professor, Institute of Scientific & Industrial Research, Osaka University
The research of Ando Laboratory focuses on growths of high-quality singe crystals and top-notch transport measurements of novel materials, such as topological insulators and topological superconductors. Our emphasis is on precise and systematic measurements of basic physical properties, which allows one to unveil the peculiar electronic states of novel materials. This is achieved by combining the expertise in solid-state physics and applied... Read More →

Tuesday August 12, 2014 08:30 - 10:30
Room 16B

10:30

Break
Tuesday August 12, 2014 10:30 - 11:00
Assorted

11:00

Complex Oxides II
11:00-11:30
Open

11:30-12:00
Open


12:00-12:30

Invited: Jeroen van den Brink
Resonant Inelastic X-Ray Scattering on High Tc Cuprates & Magnetic Iridates

Resonant Inelastic X-ray Scattering (RIXS) provides direct access to el- ementary charge, spin and orbital excitations in complex oxides. As a tech- nique it has made tremendous progress with the advent high-brilliance syn- chrotron X-ray sources. From the theoretical perspective the fundamental question is to precisely which low-energy correlation functions RIXS is sen- sitive. Depending on the experimental RIXS setup, the measured charge dynamics can include charge-transfer, phonon, d-d and orbital excitations [1]. The focus of this talk will be on RIXS as a probe of spin dynamics and superconducting gap of high-Tc cuprates [2-4] and the combined magnetic and orbital modes in strongly spin-orbit coupled iridium-oxides [5-10].

[1] L. J. P. Ament, et al., Rev. Mod. Phys. 83, 705 (2011).
[2] L. Braicovich, et al., Phys. Rev. Lett. 104, 077002 (2010).
[3] M. P. M. Dean, et al., Nature Materials 11, 850 (2012).
[4] P. Marra" et al., Phys. Rev. Lett. 110, 117005 (2013).
[5] L. J. P. Ament,et al., Phys. Rev. B 84, 020403 (2011).
[6] V. M. Katukuri, et al., Phys. Rev. B 85, 220402 (2012).
[7] N. A. Bogdanov, et al., Phys. Rev. B 85, 235147 (2012).
[8] J. Kim, et al., Phys. Rev. Lett. 108, 177003 (2012).
[9] X. Liu, et al., Phys. Rev. Lett. 109, 157401 (2012).
[10] H. Gretarsson, et al., Phys. Rev. Lett. 110, 076402 (2013).

12:30-13:00
Invited: Sergei V. Kalinin
Session TBD 

Session Chairs
GK

Gertjan Koster

Associate Professor, University of Twente
After finishing a master degree on Applied Physics Dr. Ir. G. (Gertjan) Koster performed his PhD on “Artificial layered complex oxides by pulsed laser deposition“, which he defended on September 9th, 1999 advised by prof. dr. H. Rogalla. In that same year he moved to California to join the Kapitulnik-Geballe-Beasley (KGB) group at the Geballe Laboratory for Advanced Materials, Stanford University, briefly as a visiting scholar... Read More →

Speakers
JV

Jeroen van den Brink

Director of the Institute for Theoretical Solid State Physics, IFW Dresden
Jeroen van den Brink is a theoretical condensed matter physicist, director at the Leibniz Institute for Solid State and Materials Research, IFW Dresden and professor at the Dresden University of Technology in Germany. Van den Brink is known for contributions to the field of strongly correlated materials, in particular for proposals on magnetic and orbital ordering and mechanisms for multiferroicity. | | He obtained a PhD from the University of... Read More →
SV

Sergei V. Kalinin

Theme Leader for Electronic & Ionic Functionality, Oak Ridge National Laboratory
Sergei V. Kalinin is currently a senior research staff member at Oak Ridge National Laboratory and co-theme leader for scanning probe microscopy at the Center for Nanophase Materials Sciences at ORNL, following an Eugene P. Wigner fellow appointment at ORNL (2002–2004). He received his PhD degree in materials science at the University of Pennsylvania in 2002. He is also adjunct faculty at Pennsylvania State University and professor at the... Read More →


Tuesday August 12, 2014 11:00 - 13:00
Room 19A

11:00

Computational Methods I
Click here to view Abstracts

11:00-11:30

Invited: Atsushi Oshiyama
Large-Scale Real-Space Density-Functional Calculations: Moire-Induced Electron Localization in Graphene & Floating Electron States in SiC

Current architecture of supercomputers consists of a huge number of massively paralleled compute nodes. This situation demands us to make close and exciting collaboration among the fields of physical science, applied mathematics and computer science. Such collaboration we name COMPUTICS has been already started (http://computics-material.jp/index-e.html). I explain an example of such collaboration which allows us to perform electronic-structure calculations based on the density-functional theory (DFT) for tens-of-thousands atom systems. The scheme we have adopted is the real-space (RS) scheme in the density functional theory (DFT) combined with the pseudo-potential technique. Our code RSDFT highly optimized to the current architecture of the supercomputer was awarded ACM Gordon-Bell prize in peak performance in 2011.

After explaining the essence of RSDFT, I report on the two issues in semiconductor physics. First, our large-scale DFT calculations for twisted bilayer graphene (tBLG) reveal the existence of the critical twist angle above which the two graphene layers are essentially decoupled and below which the Dirac electrons are localized due to Moire pattern. Second, in SiC, our calculations clarify that the electron states of the conduction bands of covalent semiconductors are distributed mainly in the interstitial channels and that this floating nature leads to the experimentally observed band-gap variation and the anisotropic effective masses in various polytypes of SiC.

11:30-11:45
Open

11:45-12:00
Oral: Marco Bernardi
The First Picosecond after Sunlight Absorption in Si & GaAs from First-Principles Calculations
Co-authors: Derek Vigil-Fowler, Jeffrey B. Neaton, Steven G. Louie

12:00-12:15
Oral: Piotr Boguslawski
Gallium Vacancy & Mn & Fe Ions in GaN by GGA+U Calculations: How Big is +U Term?
Co-authors: Tomasz Zakrzewski, Oksana Volnianska

12:15-12:30
Oral: Wei Chen
Band Offsets of Lattice-Matched Semiconductor Heterojunctions through Hybrid Functionals & GW 
Co-authors: Karim Steiner, Alfredo Pasquarello 

12:30-12:45
Open

12:45-13:00
Open 

Session Chairs
JB

Jeffrey B. Neaton

Director of the Molecular Foundry & Senior Faculty Scientist, Lawrence Berkeley National Laboratory
Jeffrey B. Neaton received his Ph.D. in physics from Cornell University in 2000. After a postdoc at Rutgers University, and after having worked at Lawrence Berkeley National Laboratory as a postdoc and staff scientist at the Molecular Foundry, he joined the UC Berkeley faculty in 2014. He is currently Director of the Molecular Foundry, a Department of Energy Nanoscale Science Research Center at Lawrence Berkeley National Laboratory, where he is... Read More →

Speakers
AO

Atsushi Oshiyama

Professor, Department of Applied Physics, The University of Tokyo
Atsushi Oshiyama is a professor at Department of Applied Physics in The University of Tokyo. He has been working in the field of computational materials science and condensed matter physics (http://oshiyama.t.u-tokyo.ac.jp/index-e.html). He is interested in cross-disciplinary collaboration among materials scientists and computer scientists, and now heads a research project, Materials Design through Computics... Read More →


Tuesday August 12, 2014 11:00 - 13:00
Room 16A

11:00

Electron Devices & Applications II
Click here to view Abstracts

11:00-11:30

Invited: John Robertson
Passivation of Interfacial Defects at III-V Semiconductor - Oxide Interfaces for MOSFETs

The III-V compound semiconductors such as GaAs, InAs and GaSb are needed as high mobility channel materials for use in metal-oxide-semiconductor field-effect-transistors (MOSFETs). However III-V based MOSFETs have long been hindered by our inability to properly passivate their surfaces so that the Fermi-level could be moved freely across their whole band gap. This requires a good understanding of the defects at the dielectric:semiconductor interface. We first calculate which defect species give rise to gap states. These are the As-As dimmer bonds, and the As and Ga dangling bonds. The more general underlying reason for the presence of interfacial defects then found to be the polar bonding of III-Vs, which leads to the Fermi level tending to enter the bands, due to the difficulty of valence satisfaction. An electron counting rule leads to complex surface reconstructions. A satisfactory oxide must break these complex reconstructions, stopping the formation of As-As bonds. It must act as a diffusion barrier to stop preferential oxidation of Ga, leading to As injection into the substrate forming As antisite defects. We calculate the chemical trends of various intrinsic interfacial defects of the InAs, InP and GaSb (100) and (110) interfaces compared to GaAs using ab-initio methods. The results are consistent with the experimentally observed interface defects found by Takagi et al. We finally describe how nitridation of the semiconductor- oxide interface reduces the density of gap states.

Co-authors: Yuzheng Guo

11:30-11:45
Oral: Stanko Tomic

In-Plane Coupling Effect on Efficiency of InAs/GaAs Quantum Dots Arrays for Intermediate Band Solar Cell

Co-authors: Tomah Sogabe, Yoshitaka Okada

11:45-12:00
Oral: Su-Huai Wei
Theoretical Investigation of Grain Boundary in Polycrystalline Solar Cell Absorbers
Co-authors: Ji-Sang Park, Wan-Jian Yin, Yanfa Yan

12:00-12:15
Open

12:15-12:30
Oral: Stuart Solin
Detection of Captavidin Binding with an Extraordinary Electro conductance (EEC) sensor
Co-authors: Lauren Tran, Fletcher Werner

12:30-12:45
Oral: Morten Willatzen
Extraordinary Electro-Acoustic Gain in Semiconductors in the THz Regime 
Co-authors: Johan Christensen

12:45-13:00
Open 

Speakers
JR

John Robertson

University of Cambridge
Research interests include: Carbon Nanotubes, graphene, chemical vapour deposition, electronic applications (experimental and calculation). Modelling of CVD mechanisms. Carbon interconnects, carbon conductors, carbon for supercapacitors. High dielectric constant (K) oxides for complementary metal oxide semiconductor transistors. High K oxides on high mobility substrates such as InGaAs, Ge (modelling). Transparent conducting oxides, amorphous... Read More →


Tuesday August 12, 2014 11:00 - 13:00
Room 19B

11:00

Quantum Optics, Nanophotonics III

Click here to view Abstracts

11:00-11:15

Oral: Christof P. Dietrich
Bose-Einstein Condensation of Whispering Gallery Mode Exciton-Polaritons in ZnO Micro-Wire Resonators
Co-authors: Robert Johne, Tom Michalsky, Chris Sturm, Paul Eastham, Helena Franke, Marius Grundmann, Rüdiger Schmidt-Grund

11:15-11:30
Oral: Gregory Fuchs
A Single-Molecule Approach to ZnO Defect Studies: Single Photons & Single Defects
Co-authors: Nicholas Jungwirth, Yun-Yi Pai, Hung Shen Chang, Evan MacQuarrie

11:30-11:45
Oral: Kazuki Kaneko
Simultaneous Control of Position, Density, Preferential Orientation of Nitrogen-Vacancy Centers in CVD-Grown Diamond Thin Film on Micropatterned Substrate
Co-authors: Tomohiro Gomi, Koji Fujisawa, Hideyuki Watanabe, Hitoshi Umezawa, Shinichi Shikata, Kohei M. Itoh, Junko Ishi-Hayase

11:45-12:00
Oral: Konstantin Litvinenko
Phosphorus Atoms in Silicon for Quantum Information Applications & as Analogues of Free Hydrogen Atoms on High Magnetic Field White Dwarf Stars
Co-authors: Juerong Li, Ellis Bowyer, Ben Murdin, Carl Pidgeon, Hans Engelkamp, Sergeij Pavlov, H. Hubers

12:00-12:15
Oral: F. Liu
Phonon-Assisted Population Inversion of a Single Quantum Dot
Co-authors: J.H. Quilter, A.J. Brash, M. Glässl, A.J. Ramsay, A.M. Fox, M.S. Skolnick

12:15-12:30
Oral: Maxim Makhonin
On-Demand Coherent Single Photon Source in Waveguide Geometry for Quantum Optical Circuit Implementation
Co-authors: James Dixon, Rikki Coles, Ben Royal, Edmund Clarke, Mark Fox, Maurice Skolnick

12:30-12:45
Oral: Raphael Proux
Controlling the Indistinguishability of Photons from a Resonantly Excited Semiconductor Quantum Dot
Co-authors: Maria Maragkou, Emmanuel Baudin, Christophe Voisin, Philippe Roussignol, Carole Diederichs

12:45-13:00
Oral: Gunther Reithmaier
Ultra-Slow Exciton Relaxation in InGaAs Quantum Dots Probed Using an Integrated Superconducting Single Photon Detector
Co-authors: Fabian Flassig, Peter Hasch, Max Bichler, Michael Kaniber, Jonathan Finley 


Session Chairs
JK

Julia Kabuss

Institute für Theoretische Physik, Technische Universität Berlin

Tuesday August 12, 2014 11:00 - 13:00
Room 18AB

11:00

Spintronics & Spin Phenomena III

Click here to view Abstracts

11:00-11:15

Oral: Belita Koiller
Donor Pairs in Si: Hydrogen Molecule Analogues
Co-authors: Andre Saraiva, Maria Jose Calderon, Fernando Gonzalez-Zalba, Dominik Heiss, Andrew Ferguson

11:15-11:30
Oral: Nicholas Harmon
Exploring Amorphous Silicon for Spintronics
Co-authors: Michael E. Flatté

11:30-11:45
Oral: Michael Mutch
Spin Dependent Variable Range Hopping, Electrically Detected Magnetic Resonance, & Magnetoresistance Phenomena in Amorphous Inorganic Semiconductors & Dielectrics
Co-authors: Patrick Lenahan, Corey Cochrane, Sean King

11:45-12:00
Oral: Tobias Henn
Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs
Co-authors: Tobias Kiessling, Laurens W. Molenkamp, Dirk Reuter, Andreas D. Wieck, Wolfgang Ossau

12:00-12:15
Oral: Tobias Kiessling
The Significance of Hot Carrier Effects for Low Temperature Spin-Diffusion Studies in GaAs
Co-authors: Tobias Henn, Agnes Heckel, Michael Beck, Jan-Henrik Quast, Laurens Molenkamp, Dirk Reuter, Andreas Wieck, Wolfgang Ossau

12:15-12:30
Oral: Andrzej Suchocki
The Effect of High Hydrostatic Pressure on the Paramagnetic-Ferromagnetic Phase Transition in (Ga,Mn)As
Co-authors: Malgorzata Nowakowska, Agata Kaminska, Marcin Juchniewicz, Janusz Sadowski, Maciej Sawicki, Tomasz Dietl

12:30-12:45
Oral: Janusz Kanski
Angle & Spin Resolved Photoemission from (Ga,Mn)As
Co-authors: Lars Ilver, Janusz Sadowski, Krister Karlsson

12:45-13:00
Oral: Renata Wentzcovitch
Spin Crossover in Ferroperriclase & Its Significance for Deep Earth Geophysics
Co-authors: Zhongqing Wu


Session Chairs
OV

Olaf van 't Erve

Research Scientist, Naval Research Laboratory
Olaf M.J. van ‘t Erve received his B.S., M.S., and his Ph.D. degree in electrical engineering, in 1995, 1998 and 2002 respectively, from hogeschool Enschede and the University of Twente, the Netherlands. He started his career in spintronic devices with his Ph.D. research that focused on spin-polarized hot-electron transport through metals. Since then he has done his spintronic research at the Naval Research Laboratory in Washington DC, USA... Read More →

Tuesday August 12, 2014 11:00 - 13:00
Room 18CD

13:00

Lunch On Your Own
There are many restaurants & amenities within just a few blocks of the Austin Convention Center.
View this map to see the nearby options

Tuesday August 12, 2014 13:00 - 14:30
Assorted

14:30

Complex Oxides III
Click here to view Abstracts

14:30-15:00

Invited: Scott Chambers
Redox-Induced Metal-Insulator Transition in MBE-Grown SrCrO3
Co-authors: Hongliang Zhang, Peter Sushko, Robert Colby, Yingge Du, Mark Bowden

The wide range of properties exhibited by complex oxides (CO) is due to the high degree of solubility on cation sites, and the range of charges exhibited by transition metal (TM) cations. At the same time, the limitations that TM cations impose on the CO is a reality that must be dealt with in synthesizing these materials. We illustrate these principles with the cubic perovskite SrCrO3, as prepared by molecular beam epitaxy. If perfectly stoichiometric, SrCrO3 should be a metal by virtue of an incompletely filled majority spin Cr 3d t2g derived band at the top of the valence band. However, the material is a semiconductor as deposited. The reason for this unexpected behavior is that what actually nucleates is rhombohedral SrCrO2.8, which contains a mix of Cr(III) and Cr(IV). The primary driver for SrCrO2.8 nucleation is that Cr(IV) is not stable in octahedral coordination, as found in cubic perovskite, but is stable in tetrahedral coordination. SrCrO2.8 contains oxygen deficient planes of {111}-oriented SrO2 sandwiched by layers of tetrahedrally-coordinated Cr(IV). Between these lamella are layers of SrO3 and octahedrally-coordinated Cr(III). SrCrO2.8 can be reversibly oxidized to metallic perovskite SrCrO3-δ at atmospheric pressure and relatively low temperatures (250C for oxidation and 500C for reduction), thus exhibiting a metal-to-semiconductor transition. Rapid, low-temperature oxidation occurs because SrCrO2.8 forms a quasi-2D nanostructure which facilitates fast oxide anion diffusion.

15:00-15:15
Oral: A. Srivastava
Lattice Distortions in Complex Oxides & Their Relation to the Thermal Properties
Co-author: N. K. Gaur

15:15-15:30
Oral: S. Zollner
Dielectric Function of NiO from 25 meV to 6 eV: Comparison with Silicon
Co-authors: Cayla M. Nelson, Travis I. Willett-Gies, Ayana Ghosh

15:30-15:45
Oral: R. Schmidt-Grund
Electronic Transitions & Dielectric Function Tensor in the NIR-VUV Spectral Range of YMnO3 Single Crystal
Co-authors: Steffen Richter, Stefan Ebbinghaus, Michael Lorenz, Carsten Bundesmann, Marius Grundmann

15:45-16:00
Oral: R. Dargis
Chemical & Structural Properties of Multilayer Rare-Earth Oxide Buffer for GaN MOCVD on Si
Co-authors: Andrew Clark, Erdem Arkun, Robin Smith, Tomas Grinys, Agne Kalpakovaite, Roland Tomasiunas

16:00-16:15
Oral: A. Posadas
Epitaxial In-Plane Dimerized NbO2 Thin Films
Co-authors: Andrew O'Hara, Sylvie Rangan, Robert Bartynski, Alexander Demkov

16:15-16:30
Oral: A. Natan
New Metal Oxides for Photovoltaics - Experimental & Theoretical Challenges 
Co-authors: Mivsam Yekutiel, Arie Zaban 

Session Chairs
MK

Masashi Kawasaki

Professor & Deputy Director, The University of Tokyo & RIKEN Center for Emergent Matter Science
Dr. Kawasaki has contributed significantly to developing advanced technologies for realizing atomic scale control in oxide thin film epitaxy. He has developed the combinatorial epitaxy technique which facilitates efficient means of fabricating many thin films with various compositions and/or structures on a substrate simultaneously. Based on these technologies, he has expanded the physics, functionality, and applications of the field of oxide... Read More →

Speakers
SC

Scott Chambers

Materials Sciences Laboratory Fellow, Pacific Northwest National Laboratory
Dr. Chambers is the Technical Group Leader for the PNNL Oxide Epitaxy Group. He has focused on the preparation and properties of model surfaces and interfaces for his entire career. His interests have ranged from metals to conventional Group IV and Group III-V semiconductors to simple and complex oxides. His current interests focus on the effects of doping on the structure and functional properties of epitaxial oxide films of various kinds... Read More →


Tuesday August 12, 2014 14:30 - 16:30
Room 19A

14:30

Computational Methods II
14:30-15:00
Invited: Jeffrey Neaton
Excited States & Spectroscopy of Organic Semiconductors from First Principles

Organic semiconductors are a highly tunable, diverse class of cheap-to-process materials promising for next-generation optoelectronics, for example solar cells. Further development of new organic materials requires new intuition that links molecular-scale morphology to underlying excited-state properties and phenomena. Here, I will discuss the use of first-principles density functional theory and many-body perturbation theory - within the GW approximation and the Bethe-Salpeter equation approach - for computing and understanding spectroscopic properties of selected organic semiconductor crystals, including acenes from benzene to hexacene; PTCDA; perfloropentecene; and TIPS-pentacene. For both gas-phase and crystals, our quantitative calculations agree well with transport gaps extracted from photoemission and inverse photoemission data, and with measured polarization-dependent optical absorption spectra. Introducing a new analysis, we elucidate the nature of low-lying solid-state singlet and triplet excitons, which have significant binding energies and charge-transfer character in these systems, and assess the effects of dynamic disorder associated with room-temperature structural fluctuations. In addition, we rationalize trends in predicted singlet and triplet excitation energies in the context of recently proposed mechanisms for singlet fission. Insights into new materials, as well as implications for recent spectroscopic experiments, are discussed.

15:00-15:30
Invited: Hongjun Xiang
Computational Design of Energy Materials
Co-authors: Suhuai Wei, Xingao Gong

Diamond silicon (Si) is the leading material in the current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.3 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. We recently proposed to alloy Si with its mutated III−V or II−VI semiconductors such as AlP or MgS to improve the optical properties: the C1c1-Si3AlP phase has a larger fundamental band gap and a smaller direct band gap and much higher absorption in the visible light region than Si1. On the other hand, we develop a novel inverse band structure design approach based on the evolution algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with a quasi-direct gap of 1.55 eV, which is a promising candidate for making thin-film solar cells2. Furthermore, we have developed a multi-objective evolution algorithm to optimize several desirable properties simultaneously. Employing the Inverse-Design of Materials by Multi-Objective Differential Evolution (IM2ODE) package, we predict two low-energy low-band-gap TiO2 phases for high-efficiency solar energy conversion3.

[1] J.-H. Yang, Y. Zhai, H. Liu, H. J. Xiang*, X. G. Gong*, and S.-H. Wei, J. Am. Chem. Soc. 134, 12653 (2012).
[2] H. J. Xiang*, Bing Huang, Erjun Kan, Su-Huai Wei, and X. G. Gong, Phys. Rev. Lett. 110, 118702 (2013).
[3] H. Z. Chen, Y. Zhang, X. G. Gong*, and H. J. Xiang*, J. Phys. Chem. C. (2014).

15:30-16:00
Invited: Noa Marom
Describing the Electronic Structure of Organic Semiconductors by GW Methods


Organic photovoltaics are attractive for large area, low cost applications and for flexible modules. However, their relatively low efficiency leaves much to be desired. Insight from computation may help improve device performance by designing new organic semiconductors and ordered nanostructured interfaces. It is important to obtain an accurate description of the electronic structure of organic semiconductors, including the fundamental gaps and absolute positions of the donor HOMO and the acceptor LUMO at the interface. This requires going beyond ground state density functional theory (DFT). For this purpose, many-body perturbation theory is often used within the GW approximation, where G is the one particle Green function and W is the dynamically screened Coulomb interaction. Typically, GW calculations are performed as a non-self-consistent perturbative correction to DFT eigenvalues, known as G0W0. The predictive power of G0W0 is limited by a strong dependence of the results on the DFT starting point. Self-interaction errors (SIE), spurious charge transfer, and incorrect ordering and hybridization of molecular orbitals may propagate from the DFT level to G0W0. These issues may be addressed by judiciously choosing a hybrid DFT starting point or by going beyond G0W0 to a higher level of self-consistency. Here, this is demonstrated for prototypical organic semiconductors, such as phthalocyanines and anhydrides.

16:00-16:30
Invited: Stefan K. Estreicher
Heat Flow in Semiconductor Nanostructures Containing Defects: A First-Principles Study
Co-authors: Byungkyun Kang

The lattice contribution to heat transport in materials containing surfaces, boundaries, dislocations, impurities, and other defects is commonly described in terms of "phonon scattering": defects are static scattering centers for bulk phonons. But the dynamics of defects should not be ignored, especially in nanostructures. If the spatially-localized vibrational modes of the defects are included in the calculations, phonon scattering is seen to involve phonon trapping at defects for substantial periods of time, followed by the decay of the vibrational excitation into combination of bulk phonons. Phonon trapping reduces the thermal conductivity. The interplay between delocalized (bulk) and localized (defect-related) vibrational modes could be controlled as (1) the lifetime of trapped phonons varies with the nature of defect, and (2) the decay of the excitations involves phonons of lower frequency and this can be used for heat control at heterostructures. In this talk, we will illustrate these processes in Si nanowires. The defects considered are the surface, mono-atomic delta layers of Ge or C compared to random distributions of the same impurities. We will show that if the surface is H-saturated, the localized surface modes (Si-H wag modes) couple resonantly to each other much faster than they decay into the bulk, leading to distinct bulk and surface thermal conductivities. Thermal equilibrium in the nanowire is reached only after the bulk (faster) and surface (slower) contributions have propagated. 

Session Chairs
SK

Stefan K. Estreicher

Professor, Texas Tech University
"You are only as good as your next paper" defines Stefan Estreicher's commitment to the future and to his research. | | Originally from Switzerland, Estreicher earned his doctorate from the University of Zürich in 1982 before moving to the United States in 1983. With eclectic passions ranging from physics to wine, Estreicher's success is inherent in his enthusiasm, dedication and an old-fashioned sense of learning to have fun. Estreicher... Read More →

Speakers
NM

Noa Marom

Assistant Professor, Tulane University
Noa Marom received her Ph.D. in 2010 from the Weizmann Institute of Science in her home country of Israel. She was awarded the Shimon Reich Memorial Prize of Excellence for her thesis on describing the electronic structure of organic semiconductors from first principles. She then pursued postdoctoral research at the Institute for Computational Engineering and Sciences (ICES) at the University of Texas at Austin. In 2013 she joined the Physics and... Read More →
JB

Jeffrey B. Neaton

Director of the Molecular Foundry & Senior Faculty Scientist, Lawrence Berkeley National Laboratory
Jeffrey B. Neaton received his Ph.D. in physics from Cornell University in 2000. After a postdoc at Rutgers University, and after having worked at Lawrence Berkeley National Laboratory as a postdoc and staff scientist at the Molecular Foundry, he joined the UC Berkeley faculty in 2014. He is currently Director of the Molecular Foundry, a Department of Energy Nanoscale Science Research Center at Lawrence Berkeley National Laboratory, where he is... Read More →
HX

Hongjun Xiang

Fudan University
Hongjun Xiang is now a professor of physics at Fudan university. His research lies in the area of computational condensed matter physics, and his current efforts are focused on developing computational methods, predicting and designing structures and properties, and performing model studies. | | He has explored the microscopic origin of multiferroicity and developed a general unified model that explains the ferroelectric polarization induced... Read More →


Tuesday August 12, 2014 14:30 - 16:30
Room 16A

14:30

Electron Devices & Applications III
Click here to view Abstracts

14:30-15:00

Invited: Chiara Marchiori
Ultra Thin InGaAs-On-Insulator: Physics & Chemistry of MOSFETs Critical Interfaces

Power reduction is the driving force behind the development of advanced CMOS. High mobility channels such as InGaAs and SiGe are the leading option, because devices and circuits can then work at lower drive voltage. For both n- and p-FET, the transistor built out of very thin semiconducting “high-m” channels on silicon enables fully depleted operation. Multiple oxide/semiconductor interfaces are therefore of technological relevance. The dielectric/channel interface at the gate, as well as the interface between the InGaAs channel and a buried oxide layer will determine the nFET transistor characteristics. We present here an in-depth characterization of both interfaces, extracted from InGaAs-On-Insulator structures fabricated using direct wafer bonding. Device characteristics obtained from self-aligned MOSFETs or from Y–MOS structures can be used to characterize the front resp. back interface. Physical characterization such as X-ray photoelectron spectroscopy measurements allow to extract fundamental properties of the dielectric/InGaAs interface such as reactivity, band offsets, induced band bending and Fermi level position in the semiconductor. These results will be put in perspective with the technological requirements for CMOS technology based on hybrid III-V/SiGe channels.

15:00-15:15
Oral: Giacomo Miceli
Hybrid Functional Study of Interfacial Defects at the GaAs/Al2O3 Interface
Co-author: Alfredo Pasquarello

15:15-15:30
Oral: Jim Webb
High Resolution Scanning Probe Microscopy Measurements of Semiconductor Nanowire Devices during Operation
Co-authors: Olof Persson, Kimberley Dick, Claes Thelander, Rainer Timm, Anders Mikkelsen

15:30-15:45
Oral: Qiang Li
Suspended Gate-All-Around InAs Nanowire Field-Effect Transistors
Co-authors: Shaoyun Huang, Jingyun Wang, Dong Pan, Jianghua Zhao, H.Q. Xu

15:45-16:00
Oral: Damon Carrad
Electron-Beam Patterning of Polymer Electrolyte Films to Make Multiple Nanoscale Gates for Nanowire Transistors
Co-authors: Adam M. Burke, Roman W. Lyttleton, Hannah J. Joyce, Hark Hoe Tan, Chennupati Jagadish, Kristian Storm, Sofia Fahlvik-Svensson, Heiner Linke, Lars Samuelson, Adam Micolich

16:00-16:15
Oral: Olafur Jonasson
Current Oscillations in a DC-Biased Resonant Tunneling Diode at Room Temperature
Co-authors: Irena Knezevic 

16:15-16:30
Open 

Session Chairs
JR

John Robertson

University of Cambridge
Research interests include: Carbon Nanotubes, graphene, chemical vapour deposition, electronic applications (experimental and calculation). Modelling of CVD mechanisms. Carbon interconnects, carbon conductors, carbon for supercapacitors. High dielectric constant (K) oxides for complementary metal oxide semiconductor transistors. High K oxides on high mobility substrates such as InGaAs, Ge (modelling). Transparent conducting oxides, amorphous... Read More →

Speakers
CM

Chiara Marchiori

Research Scientist & Scientific Project Lead, IBM Zurich Research Laboratory
Dr. Chiara Marchiori currently supports Matthias Kaiserswerth, director of IBM Research-Zurich, as his technical assistant. In parallel she conducts scientific research, writes and coordinates governmental and joint projects in the Advanced Functional Materials group. | | At IBM Research-Zurich, she leads the development of gate stacks suited for metal-oxide-semiconductor field-effect transistors based on high-mobility channels (III-V compound... Read More →


Tuesday August 12, 2014 14:30 - 16:30
Room 19B

14:30

Quantum Optics, Nanophotonics IV
Click here to view Abstracts

14:30-14:45
Oral: Gustavo D. Cipagauta
Detuning-Control of Exciton Entanglement in Two Quantum Dots Coupled to a Photonic Mode
Co-authors: Karen M. Fonseca-Romero

14:45-15:00
Oral: Amir Capua
Direct Observation of Wavefunction Decoherence & Control over the Electronic Quantum State in a Room-Temperature InAs/InP Quantum Dot Semiconductor Optical Amplifier
Co-authors: Ouri Karni, Gadi Eisenstein, Vitalii Ivanov, Vitalii Sichkovskyi, Johann Peter Reithmaier

15:00-15:30
Invited: Jonathan H. Prechtel
Coherent Population Trapping on a Single Hole Spin in a Semiconductor Quantum Dot
Co-authors: Andreas V. Kuhlmann, Julien Houel, Arne Ludwig, Andreas D. Wieck, Richard J. Warburton

The coherence of an electron spin qubit in a semiconductor quantum dot (QD) is limited by the hyperfine interaction with the nuclear spins. Switching to a hole spin may bypass this problem. The hyperfine interaction of a pure heavy hole spin has a dipole-dipole term along the growth direction only such that the coupling to the nuclear spins is highly suppressed in an in-plane magnetic field [1]. We explore here the extent to which this ideal limit can be achieved in practice using coherent population trapping (CPT), a quantum interference which arises between two ground states, here the hole spin states, and a common upper level, here the exciton state of an InGaAs quantum dot. CPT enables a precise spectroscopic measurement of the hole Zeeman splitting ZH and also a probe of hole spin decoherence. The long hole spin coherence enables us to achieve CPT dips of just 33 neV (8 MHz) width.

We find that ZH depends on vertical electric field, F. While ZH is QD-dependent, dZH/dF is largely the same for all QDs in our sample. We show that via this mechanism, charge noise results in significant hole spin dephasing in our good but imperfect device. The interaction with the nuclear spins is quantified by polarizing the nuclear spins optically, measuring ZH with CPT. In an in-plane magnetic field of 3 T, ZH remains the same (to within our error of 20 neV) even as the electron Zeeman energy changes by 12 eV. This demonstrates a remarkably effective decoupling of the hole spin from the nuclear spins.

[1] J. Fischer et al, Phys. Rev. B 78, 155329 (2008).

15:30-15:45
Oral: Carlos Anton
Momentum Space Interferences as an Evidence of Remote Quantum Coherence of Condensates
Co-authors: Guilherme Tosi, Maria Dolores Martin, Zacharias Hatzopoulos, Georgios Konstantinidis, Peter Eldridge, Pavlos Savvidis, Carlos Tejedor, Luis Viña

15:45-16:00
Oral: Yves Leandre Delley
Coherent Spin Qubits in Optically Active InGaAs Quantum Dots
Co-authors: Wei-bo Gao, Aymeric Delteil, Priska Studer, Martin Kroner, Stefan Fält, Werner Wegscheider, Ataç İmamoğlu

16:00-16:15
Oral: John Bradley
Nano-Epitaxy as a Platform for Quantum Photonics
Co-authors: Andrew Foster, Andrey Krysa, Ben Royall, Paul Fry, Maurice Skolnick, Luke Wilson

16:15-16:30
Oral: Clemens Matthiesen
Measuring the Local Environment of a Quantum Dot
Co-authors: Megan Stanley, Jack Hansom, Claire Le Gall, Mete Atature

Session Chairs
GF

Greg Fuchs

Assistant Professor & Rebecca Q. & James C. Morgan Sesquicentennial Faculty Fellow, Cornell University
Fuchs earned his Ph.D. from Cornell University in 2007. Afterward, he moved to the University of California, Santa Barbara as a postdoctoral associate. In 2011, he joined the Cornell faculty of Applied and Engineering Physics. In 2012 he received a Young Investigator Award from the Air Force Office of Scientific Research, and in 2013 he received an Early Faculty Career Award from the National Science Foundation and the Presidential Early Career... Read More →

Speakers
JH

Jonathan H. Prechtel

University of Basel


Tuesday August 12, 2014 14:30 - 16:30
Room 18AB

14:30

Spintronics & Spin Phenomena IV

Click here to view Abstracts

14:30-14:45

Oral: Lin Chen
The Effect of Electric-Field on Damping Constant of Ferromagnetic Semiconductor (Ga,Mn)As
Co-authors: Fumihiro Matsukura, Tomasz Dietl, Hideo Ohno

14:45-15:00
Oral: Le Duc Anh
Electrical Control of Ferromagnetism by Wave Function Engineering in n-type Ferromagnetic Semiconductor (In,Fe)As Quantum Wells
Co-authors: Pham Nam Hai, Yuichi Kasahara, Yoshihiro Iwasa, Masaaki Tanaka

15:00-15:15
Oral: Stefano Roddaro
Stark Effect Control of Spin Rectification in a Nanoscale Multi-Dot System
Co-authors: Francesco Rossella, Daniele Ercolani, Lucia Sorba, Fabio Beltram

15:15-15:30
Oral: Ran Cheng
Onsager Reciprocity in Antiferromagnets: Spin-Pumping & Spin-Transfer Torques
Co-authors: Jiang Xiao, Arne Brataas, Qian Niu

15:30-15:45
Oral: Karsten L. Vendelbjerg
Spin Transfer Torque with Excitons
Co-authors: Lu. J. Sham, Massimo Rontani

15:45-16:00
Oral: Arne Laucht
Engineering Coupling of Electron Spin Qubits for Quantum Computation
Co-authors: Rachpon Kalra, Juan P. Dehollain, Juha T. Muhonen, Charles Hill, Andrew S. Dzurak, Andrea Morello

16:00-16:15
Oral: Roderick Melnik
Berry Phase Control in Semiconductor Quantum Dots
Co-author: Sanjay Prabhakar

16:15-16:30
Oral: Patrick Altmann
Enhanced Lifetime of a Spin Helix in Laterally Constricted GaAs Quantum Wells
Co-authors: Matthias P. Walser, Christian Reichl, Werner Wegscheider, Gian Salis 


Session Chairs
FH

Felix Hernandez

Assistant Professor, University of São Paulo

Tuesday August 12, 2014 14:30 - 16:30
Room 18CD

16:30

Break
Complimentary coffee and tea served outside Rooms E,F, and G. 

Tuesday August 12, 2014 16:30 - 17:00
Assorted

17:00

Posters: Complex Oxides
Click here to view Abstracts

[A1] Ahmed I. Ali

Magnetic Oxide Thin Solid Films Deposited at Room Temperature & Ambient Pressure Using an Electro-Spray Method
Co-authors: Yong Soo Kim

[A2] Avneesh Anshul
Magnetodielectric Coupling in Magnetic Epitaxial Bi2NiMnO6 Thin Film
Co-authors: S. S. Amritphale, Navin Chandra

[A3] William D. Chemelewski
Small Polaron Hopping in Epitaxial Hematite Films
Co-authors: Alexander J. E. Rettie, Jeffrey Lindemuth, Tim C. Droubay, John S. McCloy, Scott A. Chambers, C. Buddie Mullins

[A4] Hua Chen
Theory of Anisotropic Magnetoresistance in Antiferromagnetic Sr2IrO4
Co-authors: Maxim Tsoi, Allan H. MacDonald

[A5] Miri Choi
Optical Properties of Oxide Quantum Wells
Co-authors: Chungwei Lin, Agham B. Posadas, Alexander A. Demkov, Cesar A. Rodriguez, Stefan Zollner, Qian He, Albina Y. Borisevich

[A6] Kurt Fredrickson
Atomic & Electronic Structure of the BaTiO3-Ge (001) Interface
Co-authors: Patrick Ponath, Agham Posadas, Martha McCartney, Toshihiro Aoki, David Smith, Alexander Demkov

[A7] Tobias Hadamek 
Properties of MBE Grown NbO2 Thin Films

[A8] William G. Hardin
Tuning the Electrocatalytic Activity of Perovskite Oxides for Water Oxidation & Oxygen Reduction by Active Site Variation & Support Interactions
Co-authors: J. Tyler Mefford, Daniel A. Slanac, Bijal B. Patel, Sheng Dai, Keith J. Stevenson, Keith P. Johnston

[A9] Kristy Kormondy
Epitaxy of Polar Semiconductor Co3O4 (110): Growth, Structure, & Characterization
Co-authors: Agham Posadas, Alexander Slepko, Ajit Dhamdhere, David Smith, Kadijih Mitchell, Travis Willet-Geis, Stefan Zollner, Luke Marshall, Jianshi Zhou, Alex Demkov

[A10] Horacio W. Leite Alves
Structural & Electronic Properties of SnO2/TiO2 (001) Superlattices
Co-authors: Eronides F. da Silva Jr.

[B1] Martin D. McDaniel
Crystalline SrHfO3 Grown Directly on Ge (001) by Atomic Layer Deposition as a Gate Oxide for High-Mobility Ge-Based Transistors
Co-authors: Thong Q. Ngo, Agham Posadas, Chengqing Hu, Aiting Jiang, Edward T. Yu, Alexander A. Demkov, John G. Ekerdt

[B2] J. Tyler Mefford
Anion Charge Storage through Oxygen Intercalation in LaMnO3 Perovskite Pseudocapacitor Electrodes
Co-authors: William G. Hardin, Sheng Dai, Keith P. Johnston, Keith J. Stevenson

[B3] Thong Q. Ngo
Integration of Ferroelectric Perovskites on Ge(001) by ALD: Case Study of BaTiO3
Co-Authors: Martin D. McDaniel, Agham Posadas, Alexander A. Demkov, John G. Ekerdt

[B4] Young Jun Oh
Role of Oxygen-Related Defects in the Instability of Amorphous In-Ga-Zn-O Based Thin Film Transistors
Co-authors: W. H. Han, Hyeon-Kyun Noh, Kee Joo Chang

[B5] Alexander J. E. Rettie
Electronic Transport Properties of Bismuth Vanadate Single Crystals
Co-authors: Jeffrey Lindemuth, William D. Chemelewski, John S. McCloy, Luke G. Marshall, Jianshi Zhou, C. Buddie Mullins

[B6] Archana Srivastava
Bulk Modulus & Specific Heat of Complex Oxide (La0.3Pr0.7)0.65Ca0.35Mn1-xBxO3 (B=Fe, Cr, Ru, Al, Ga)
Co-authors: N. K. Guar

[B7] Amit Verma
Ferroelectric Transition in Compressively Strained SrTiO3
Co-authors: Santosh Raghavan, Susanne Stemmer, Debdeep Jena

[B8] Cheng Wang
Anisotropic Magnetoresistance in Antiferromagnetic Semiconductor Sr2IrO4
Co-authors: H. Seinige, G. Cao, J. S. Zhou, J. B. Goodenough, M. Tsoi

[B9] Vitaly Zviagin
Optical & Magnetooptical Properties of Charge-Transfer Transitions in ZnFe2O4, CoFe2O4, & ZnCo2O4 Spinel Oxide Thin Films
Co-authors: Peter Richter, Tammo Böntgen, Michael Lorenz, Dietrich RT Zahn, Georgeta Salvan, Rüdiger Schmidt-Grund, Marius Grundmann

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Computational Methods
Click here to view Abstracts

[B10] Salah Eddine Daho

First-Principles Calculations on Elastic & Thermodynamic Properties of ZnS & ZnO
Co-author: Mohammed Ameri

[C1] Sunghyun Kim
Determination of Accurate Transition Levels of Charged Defects in Silicon Nanowires
Co-authors: Ji-Sang Park, K. J. Chang

[C2] Huang-Hsiang Lin
Analysis of Two-Phonon Infrared Spectral Features of GaAs & InP by ab Initio Calculations
Co-authors: Shun-Tung Yen

[C3] Jairo Marín
Single Ionized Two-Hydrogenic System in Non-Uniform Quantum Ring Under the Presence of External Fields 
Co-authors: Marlon Fulla, Yoder Suaza

[C4] Jairo Marín
Linear & Nonlinear Optical Properties of Off-Axis Donor in Non-Uniform Quantum Ring Under External Probes 
Co-authors: Marlon Fulla, Miguel Mora

[C5] Jairo Marín
Effect of the Dimensionality on Two-Particle Systems Confined in Semiconductor Quantum Ribbons & Rings
Co-authors: Marlon Fulla, William Gutiérrez

[C6] Jairo Marín 
Hydrostatic Pressure, Temperature & Concentration Effects on a Two-Hydrogenic Complex in GaAs/AlxGa1-xAs Quantum Donuts 
Co-authors: Marlon Fulla, William Gutiérrez

[C7] Luis Porras

Magneto-Exciton & Biexciton in a Narrow Quantum Ring
Co-authors: William Gutiérrez, Ilia Mikhailov

[C8] Eugen Sheregii
Stochastic Model for Ternary & Quaternary Alloys - Application of the Bernoulli Relation to the Phonon Spectra of Mixed Crystals 
Co-authors: Jacek Polit, Jozef Cebulski, Augusto Marcelli, Massimo Piccinini

[C9] Jakub Skibinski
Finite Volume Method Simulations of GaN Growth Rate in MOVPE Reactor
Co-authors: Piotr Caban, Tomasz Wejrzanowski, Krzysztof Kurzydlowski

[C10] Tomasz Wejrzanowski
Modelling of Mass Flow in MOVPE Reactor for Optimization of AlN Thing Film Growth Process
Co-authors: Jakub Skibinski, Piotr Caban, Krzysztof Kurzydlowski 

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Electron Devices & Applications
Click here to view Abstracts

[D1] Haider Al-Taie

Threshold Tuning of Split-Gate Transistors in Series
Co-authors: Luke Smith, Reuben Puddy, Patrick See, Jonathan Griffiths, Ian Farrer, Geb Jones, David Ritchie, Charles Smith, Michael Kelly

[D2] Yao-Feng Chang 
Comprehensive Study of Intrinsic Unipolar SiOx-Based RRAM Characteristics & Self-Compliance Characteristics in High-Density Nano Pillar-Type 1D-1R Architecture 
Co-authors: Burt Fowler, Li Ji, Ying-Chen Chen, Fei Zhou, Edward T. Yu, Jack C. Lee

[D3] Davide Colleoni
Amphoteric Defects Pinning the Fermi-level in GaAs: A Hybrid Functional Study
Co-authors: Alfredo Pasquarello

[D4] Daiki Deguchi
Computational Material Design for Conversion Efficiency of Sustainable Photovoltaic Materials
Co-authors: Kazunori Sato, Hiroshi Yoshida, Tomoyuki Kakeshita

[D5] Dingxun Fan
Transport Characteristics of Single Quantum Dots Made from MBE-Grown InSb Nanowires
Co-authors: Sen Li, Philippe Caroff, Mingtang Deng, Chunlin Yu, Ning Kang, Hongqi Xu

[D6] Chris Ford  
Electron Transport Through Individual Nanocrystals
Co-authors: Qian Miao

[D7] Cheng-Chih Hsieh 
Characterization of Cerium Oxide Based Resistive Random Access Memories 
Co-authors: Anupam Roy, Amritesh Rai, Sanjay Banerjee

[D8] Damir Islamov 
Percolation Transport of Low Resistive State in HfO2-Based Resistive Memory 
Co-authors: Vladimir Gritsenko, Chun Hu Cheng, Albert Chin

[D9] Damir Islamov 
Origin of Defects Responsible for Charge Transport of High Resistive State in HfO2-Based Resistive Memory 
Co-authors: Timofey Perevalov, Vladimir Gritsenko, Vladimir Aliev, Andrey Saraev, Vasiliy Kaichev, Chun Hu Cheng, Albert Chin

[D10] Geun-Myeong Kim
Migration Pathways & Barriers for B Diffusion at Si/SiO2 & SiGe/SiO2 Interfaces
Co-authors: Young Jun Oh, Chang Hwi Lee, Kee Joo Chang

[E1] Hogyoung Kim
Investigation of Interface States & Transport Properties in ZnO Schottky Diodes

[E2] Sunmi Kim
Two-Color Detection with a Charge Sensitive Infrared Phototransistor (CSIP) in the THz Range
Co-authors: Susumu Komiyama, Takeji Ueda, Takeshi Satoh, Yusuke Kajihara

[E3] Dong Uk Lee 
Memory Effect of GaN Pseudo Metal-Oxide-Semiconductor Field-Effect-Transistor with Au Quantum Dots & Graphene Layer
Co-authors: Joon Sub So, Dong Ri Qiu, Gyujin Oh, Kyoung Su Lee, Eun Kyu Kim

[E4] Kyoung Su Lee
Correlation between Dark Currents & Defects in InAs/GaAs Quantum Dot Solar Cell Grown by Molecular Beam Epitaxy
Co-authors: Dong Uk Lee, Eun Kyu Kim, Won Jun Choi

[E5] Belhadji Maamar 
Non-Isothermal Crystallization Study of Se90-xZn10Sbx (x = 0, 2, 4, 6) Chalcogenide Glasses 
Co-authors: Heireche Mohamed, Belbachir Mohamed

[E6] Samson Mil'shtein
Optimization of Solar Energy Harvesting by Novel Solar Cells

[E7] Nobuya Mori
Theory of Avalanche Multiplication in Nanocrystalline Silicon Photovoltaic Structures
Co-authors: Nobuyoshi Koshida

[E8] Patrick Ponath 
Epitaxial BaTiO3 on Ge (001) 
Co-authors: Kurt Fredrickson, Agham Posadas, Yuan Ren, Keji Lai, Rama Vasudevan, Baris Okatan, Stephen Jesse, Sergei Kalinin, Martha McCartney, David Smith, Alex Demkov

[E9] Servin Rathi
Asymmetrical Metal & Graphene Contacts to MoS2 as a Gate-Tunable Two Dimensional Diode
Co-authors: Jinhyung Park, Inyeal Lee, Gil-Ho Kim

[E10] Kazunori Sato
Efficiency Enhancement in Cd(S, Te) Photovoltaic Solar Cell Materials by Self-Organized Nano-Structures
Co-authors: Hiroshi Katayama-Yoshida

[F1] Martin Schubert 
Collective Excitations in Martensitic Ni-Mn-Ga-(Co) Thin Films Resolved with Ultrafast Coherent Phonon spectroscopy 
Co-authors: Jan Meyer, Hanjo Schäfer, Aleksej Laptev, Mike Hettich, Moritz Merklein, Chuan He, Martin Grossmann, Oliver Ristow, Yuan Luo, Konrad Samwer, Mikhail Fonin, Vitalyi Gusev, Jure Demsar, Thomas Dekorsy

[F2] Abhay Singh
Temperature Dependent Resistivity & 1/f Noise Measurements in ZnO Nanowires
Co-authors: Bhargav Mallampati, Bryan McLaren, Vincent Lopes, Chris Littler, Athanasios Syllaios, Usha Philipose

[F3] Manisha Upadhyay 
Evidence of Defective Sites in Phase Change Memory Materials


[F4] Byungwook Yoo
Investigation of High Dielectric Constant Fluorinated Hybrid Material for Printed Organic Field Effect Transistors
Co-authors: Sangho Jo, Hee-jin Kim, Young Tae Kim, Jin-kyun Lee

[F5] Fei Zhou 
Discussion on Backward Voltage Sweep Set Effect in SiOx Resistive Memory 
Co-authors: Yaofeng Chang, Kwangsub Byun, Burt Fowler, Jack Lee 

[S1] Pablo Borges
First Principles Study of Planar Sb- and Zn-codopeded SnO2 Superlattices 
Co-authors: Naiara Castro, Débora Silva, Frederico Pinto, Jairo Tronto, Luisa Scolfaro 

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Material Structure
Click here to view Abstracts

[F6] Ch Ashok

Synthesis of CuO-TiO2 Nanocomposites by Microwave - Assisted Room Temperature Ionic Liquids
Co-authors: K Venkateswara Rao, Ch Shilpa Chakra, V Rajendar

[F7] Jau-Wern Chiou
The Atomic & Electronic Structures of Nitrogen-Doped ZnO Thin Films Studied by X-Ray Absorption & X-Ray Photoelectron Spectroscopy
Co-authors: Chia-Lung Li, Jui-Fen Chien, Miin-Jang Chen

[F8] Eronides da Silva Jr.
Synthesis of Polyaniline from the Emeraldine Base by Exposure to X-Rays
Co-authors: Jorlandio Felix, Walter De Azevedo, Horacio Alves

[F9] Fernando Wellysson de Alencar Sobreira
Formation of InAs Quantum Dots on a Pre-Patterned GaAs Surfaces Prepared with a Ga+ Focused Ion Beam
Co-authors: Haroldo Arakaki, Carlos Alberto de Souza, Euclydes Marega Junior

[F10] Lars Ilver
Effects of Non-Uniform Mn Distribution in (Ga,Mn)As
Co-authors: Janusz Kanski, Janusz Sadowski, Krister Karlsson, Arthur Ernst, Leonid Sandratskii

[G1] Primavera Lopez
Structural Characterization of Heteroexpitaxial Growth of AlxGa1-xSb/GaSb(0 0 1) Layers by Liquid Phase Epitaxy
Co-authors: Javier Martínez, Gabriel Juarez, Joel Diaz

[G2] Nattapa Prapasawad
Lateral Quantum-Dot Molecules Growth by Droplet Epitaxy
Co-authors: Somchai Ratanathammaphan, Patchareewan Prongjit, Somsak Panyakeow

[G3] Aditya N. Roy Choudhury
Magnetic Field Dependence of the Chemical Potential in GaAs & Si
Co-authors: V. Venkataraman 

[G4] Petr Semenikhin
Magnetic Ordering of Impurity Spins in Ge & Si
Co-authors: Anatoly Veinger, Andrey Zabrodskii, Tatyana Tisnek, Stanislav Goloshchapov

[G7] Stanko Tomic
Predictive Modeling of Electronic & Optical Properties of Novel CuInS2 Wurtzite Phase
Co-authors: Leo Bernasconi, Barry Searle, Nic Harrison

[G5] Ilya Yakovlev
Analysis of Electron & Hole Subsystems in Polar & Nonpolar Heterostructures by CV-Profiling & Self-Consistent Modeling
Co-authors: Anastacya Petrovskaya, Vaciliy Zubkov

[G6] Ilya Yakovlev
Analysis of Unusual Filling of MQW InGaAs/GaAs & Quantization Level Behavior Observation with C-V Method at Low Temperature
Co-authors: Anastacya Petrovskaya, Vaciliy Zubkov, Olga Kucherova, Vladimir Litvinov, Alexander Ermachihin 

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Organic Semiconductors
Click here to view Abstracts

[G8] Naoki Ohtani 

Inorganic-Organic Hybrid Light-Emitting Diodes Driven by Low DC Voltage Containing CdSe-ZnS Core-Shell Quantum Dot Emitters 
Co-authors: Yuushi Hagimoto, Satoru Yoshikawa

[G9] Wei Si
Magnetoresistance from Quenching of Spin Quantum Correlation in Organic Semiconductors
Co-authors: Yao Yao, Chang-Qin Wu 

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Quantum Hall Effects
Click here to view Abstracts

[G10] Ginetom S. Diniz 

Strain Engineered Quantum Anomalous Hall Effect in Graphene 
Co-authors: Marcos R. Guassi, Jorge L. H.Correa, Fanyao Qu

[H1] Alexandre Levine 

Microwave Induced Nonlocal Transport in Two-Dimensional Electron System
Co-authors: Zahra Sadre momtaz, Guennady Gusev, Askhat Bakarov

[H2] Ramesh Mani
Influence of Sample Geometry on the Phase Shift in the Linear-Polarization-Angle Dependence of Radiation-Induced Magneto-Resistance Oscillations in the GaAs/AlGaAs System
Co-authors: Han-Chun Liu, Tianyu Ye, Werner Wegscheider

[H3] Sebastian Peters

Addressing Remote Ionized Impurity Scattering in Gate-Controlled GaAs/AlGaAs Heterostructures
Co-authors: Christian Reichl, Werner Dietsche, Werner Wegscheider

[H4] Yuri Pusep
Evidence of Quantum Hall Gap Collapse Caused by Tilted Magnetic Field in Photoluminescence Spectra of a GaAs/AlGaAs Triple Quantum Well 
Co-authors: Lara Fernandes dos Santos, Brenno Barbosa, Gennadii Gusev, J. Ludwig, Dmitry Smirnov, Ashat Bakarov

[H5] Zahra Sadre momtaz 
Thermopower Magneto-Intersubband Oscillations in a Double Quantum Wells
Co-authors: Guennady Gusev, Alexandre Levine, Askhat Bakarov

[H6] Daiju Terasawa 
Resistance Maxima & Deviations from the Quantized Hall Value Induced by Dynamic Nuclear Polarization Around the N=2/3 Quantum Hall State 
Co-authors: Shibun Tsuda, Shohei Mitani, Minh-Hai Nguyen, Akira Fukuda, Anju Sawada

[H7] Fanyao Qu
Valley Quantum Coherence & Spin-& Valley-Dependent Optical Properties of MoS2
Co-authors: F.C. Wu, F. Xue, Allan MacDonald

[H8] Fengcheng Wu
SO(5) Symmetry in the Quantum Hall Regime of Graphene
Co-authors: Inti Sodemann, Yasufumi Araki, Thierry Jolicoeur, Allan MacDonald

[H9] Mikhail Yakunin
Quantum Phase Transitions in the Quantum Hall Regime for a Double Quantum Well Nanostructure
Co-authors: Yurii Arapov, Svetlana Gudina, Anna Klepikova, Vladimir Neverov, German Harus, Nina Shelushinina

[H10] Mikhail Yakunin
Reentrant Sign-Alternating Quantum Hall Effect & a Zero Filling Factor State in the HgTe/CdHgTe Double Quantum Well 
Co-authors: Alexei Suslov, Mikhail Popov, Elena Novik, Sergei Dvoretsky, Nikolai Mikhailov

[i1] Tianyu Ye
Combined Study of Microwave-Power-Dependence & Linear-Polarization-Dependence of Microwave Radiation-Induced Magnetoresistance Oscillations
Co-authors: Han-Chun Liu, Ramesh Mani, Werner Wegscheider

[i2] Victor Yu

Current Hysteresis at Breakdown of the Quantum Hall Effect Near v=1 in an InGaAs Quantum Well
Co-authors: Alexander Wicha, Philip Poole, Sergei Studenikin, Guy D. Austing, Michael Hilke

[i3] Qi Zhang
Terahertz Coherent Cyclotron Resonance of Ultrahigh-Mobility Two-Dimensional Holes in a Ge/Si0.15Ge0.85 Quantum Well
Co-authors: Junichiro Kono, Oleg Mironov, Richard Morris, David Leadley, Michael Zudov, Eiji Kato, Dipta Saha, Christopher Stanton 

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Spintronics & Spin Phenomena
Click here to view Abstracts

[i4] Shinichi Amaha

Spin Blockaded State Transition & Bi-Stability of Two Stable Nuclear Spin Fixed Points in Coupled Quantum Dots
Co-authors: Gen Kurosawa, Yusuke Kondo, Keiji Ono, Seigo Tarucha

[i5] Mahmoud M. Asmar
Intervalley & Spin Dependent Scattering in Graphene Systems
Co-authors: Sergio E. Ulloa

[i6] Samvel Badalyan
Spin-Orbit-Interaction Induced Singularity of the Charge Density Relaxation Propagator
Co-authors: Abiague Matos-Abiague, Jaroslav Fabian, Giovanni Vignale, Francois Peeters

[i7] Nikolay Bagraev
Electrically-Detected ESR of One-Electron Vacancy Center in Silicon Nanostructures Inserted in Microcavities
Co-authors: Edward Danilovskii, Wolfgang Gehlhoff, Dmitrii Gets, Leonid Klyachkin, Andrey Kudryavtsev, Roman Kuzmin, Anna Malyarenko, Vladimir Mashkov, Vladimir Romanov

[i8] Nikolay Bagraev
Optically Detected Cyclotron Resonance Revealed by Defects Photoluminescence in Silicon
Co-authors: Pavel Baranov, Alexandr Gurin, Leonid Klyachkin, Roman Kuzmin, Anna Malyarenko, Nikolay Romanov

[i9] Anibal T. Bezerra
Modeling GaMnAs Heterostructures for Generation & Control of Spin-Polarized Photocurrents
Co-authors: Leonardo K. Castelano, Marcos H. Degani, Marcelo Z. Maialle, Paulo F. Farinas, Nelson Studart

[i10] Olivio Chiatti
Electrical & THz Optical Transport Studies of Laser-Patterned Nanostructures on InAs-Based Heterostructures
Co-authors: Sven S. Buchholz, Wolfgang Hansen, Mehdi Pakmehr, Bruce D. McCombe, Saskia F. Fischer, Christian Heyn

[J1] Russell Deacon
Toward Cavity QED with InSb Nanowire Spin Quibits
Co-authors: Giles Allison, Tomoko Fuse, Akira Oiwa, Francois Michaud, Mingtang Deng, Honqui Xu, Seigo Tarucha, Koji Ishibashi

[J2] H. V. A. Galeti
Optical & Magneto-Optical Investigation of Spin Effects in InGaAsN/GaAs Quantum Wells
Co-authors: Y. Galvão Gobato, M.P.F. Godoy, V. Orsi Gordo, L. K. S. Herval, A. Khatab, M. Henini, O. M. Lemine, M. Sadeghi, S. Wang, Bruno B. H. Santos

[J3] Yara Galvão Gobato
Spin Polarized Hole Injection in Resonant Tunneling Diodes
Co-authors: Helder V. Avanço Galeti, Maria José S.P. Brasil, Anibal T. Bezerra, David Taylor, Mohamed Henini

[J4] Zhenxin He
Measurement of the Transmission Magnetic Circular Dichroism of Ga(1-x)Mn(x)As Epilayers Using a Built-In p-i-n Photodiode
Co-authors: Liguo Wang, Qi Liu, Houzhi Zheng

[J5] Piotr Juszyński
Study of Magnetic Snisotropy of GaMnAs with Strong Epitaxial Strain
Co-authors: Marta Gryglas-Borysiewicz, Jacek Szczytko, Janusz Sadowski, Dariusz Wasik

[J6] Ken Kanazawa
Interaction Between Impurity States of Cr Atoms in Diluted Magnetic Semiconductor (Zn,Cr)Te Studied by STM & STS
Co-authors: Taku Nishimura, Shoji Yoshida, Hidemi Shigekawa, Shinji Kuroda

[J7] Tomasz Kazimierczuk
Optically Detected Nuclear Magnetic Resonance in CdTe & InGaAs Nanostructures
Co-authors: Eiko Evers, Alex Greilich, Tomasz Wojtowicz, Grzegorz Karczewski, Dirk Reuter, Andreas Wieck, Dmitri Yakovlev, Manfred Bayer

[J8] Adrian Maier
Probing the Intrinsic Spin-Hall Effect in High-Mobility AlGaAs/GaAs 2DHSs
Co-authors: Christian Reichl, Stefan Faelt, Werner Wegscheider

[J9] Jacek A. Majewski
Ab Initio Studies of Surface Magnetism 
Co-authors: Magdalena Popielska

[J10] Yasuaki Masumoto
Trion Resonant Kerr Rotation in ZnO:Ga
Co-authors: Akira Murakami, Hikaru Umino, Shinichi Tomimoto

[K1] Iriya Muneta
Sudden Restoration of Valence-Band Ordering Associated with Ferromagnetic Phase Transition in GaMnAs
Co-authors: Hiroshi Terada, Shinobu Ohya, Masaaki Tanaka

[K2] Fumiya Nagasawa
Anisotropic Aharonov-Casher Effect in Competition Between Rashba & Dresselhaus Spin-Orbit Coupling
Co-authors: Sirimon Tantiamornpong, Makoto Kohda, Junsaku Nitta

[K3] Hiroyasu Nakata
Photoreflectance & Photoluminescence in Ce-doped Si
Co-authors: Kazuya Ueno, Yusuke Miyata, Norifumi Fujimura

[K4] Arkadiusz Podgórni
Carrier Mediated Magnetism of Ge/1-x-y/Pb/x/Mn/y/Te Composite System
Co-authors: L. Kilanski, W. Dobrowolski, M. Górska, V. Domukhovski, A. Reszka, B.J. Kowalski, B. Brodowska, K. Szałowski, V.E. Slynko, I.E. Slynko

[K5] Tanmoy Pramanik
Proposal of a Multi-State Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet
Co-authors: Urmimala Roy, Leonard F. Register, Sanjay K. Banerjee

[K6] Vanessa Preisler
Magnetic & Magneto-Optical Properties of MnGe Films
Co-authors: Annalee Sendis, Zuoming Zhao, Xinhai Han, Kang Wang

[K7] Yuri Pusep
Valence Band Spin-Splitting Detuning with Tilting Magnetic Field in Multiple Quantum Wells 
Co-authors: Lara Fernandes dos Santos, Leonardo K. Castelano, Johnni X. Padilha, Victor Lopez-Richard, Gilmar E. Marques, Dmitry Smirnov, A. K. Bakarov, A. I. Toropov

[K8] Paulo H. O. Rappl
Near-Gap Magneto-Optical Sharp Lines from PbEuTe Alloys
Co-authors: Emilio H. Suárez, Paulo Motisuke, Odilon D. D. Couto Jr., Rossano Lang, Michael Möller, M. A. G. Balanta, Maria J. S. P. Brasil, Fernando Iikawa

[K9] Mariama Rebello Sousa Dias
Rashba Spin-Orbit Interaction in an H-bar Configuration, Unveiling the Spin Transport Properties
Co-authors: Victor Lopez-Richard, Gilmar E. Marques, Sergio Ulloa

[L1] Guilherme Sipahi
Graphene Spintronics: Spin Injection & Proximity Effects from First Principles
Co-authors: Predrag Lazic, Igor Zutic, Roland Kawakami, Nicolae Atodiresei, Kirill Belaschenko, Branislav Nikolic

[L2] Guilherme Sipahi
Optical Spin Injection in GaAs Nanowires 
Co-authors: Paulo Eduardo Faria Junior, Igor Zutic

[K10] Cezary Sliwa
Orbital Magnetization & Hall Effects in Dilute Ferromagnetic Semiconductors
Co-authors: Tomasz Dietl

[L3] Masao Takahashi
Similarity / Difference Between Gd-Doped EuO & La-Doped EuO

[L4] Chihiro Takigchi
Computational Materials Design of High-TC DMS with IV-VI Compound Semiconductors
Co-authors: Kazunori Sato, Tetsuya Fukushima, Tomoyuki Kakeshita, Hiroshi Katayama-Yoshida

[L5] Ning Tang
Spin Transport Properties of the Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure
Co-authors: Fuhong Mei, Shan Zhang, Junxi Duan, Fujun Xu, Yonghai Chen, Weikun Ge, Bo Shen

[L6] Marcelo A. Toloza Sandoval
Zeeman Splitting for Electrons in III-V Asymmetric Quantum Wells
Co-authors: Antonio Ferreira da Silva, Erasmo A. de Andrada e Silva, Giuseppe C. La Rocca

[L7] Guilherme Tosi
Coupling Single Spins in Silicon to Microwave Resonators
Co-authors: Fahd Mohiyaddin, Alexandra Boulgakov, Sam Jiang, Arne Laucht, Brett Johnson, Jeffrey McCallum, Christoph Zollitsch, Hans Huebl, Andrea Morello

[L8] Guilherme Tosi
Vorticity & Angular Momentum in a Partially-Coherent Polariton Quantum Fluid
Co-authors: Carlos Anton, Carlos Parra-Murillo, Daniele Sanvitto, Matthias Baudisch, Lorenzo Marrucci, Aristide Lemaitre, Jacqueline Bloch, Carlos Tejedor, Luis Vina

[L9] Shaohua Xiang
Discussion on the Role of Kondo Physics in Quantum Point Contacts Near Pinch-Off
Co-authors: Yuichi Ochiai, Nobuyuki Aoki, Jonathan Bird

[L10] Sh. U. Yuldashev
Magnetoelectric Effect in GaMnAs/P(VDF-TrFE) Multiferroic Heterostructure
Co-authors: H. C. Jeon, T. W. Kang, S. J. Lee

[M1] Jianwei Zhang
Magnon Excitation & Decay in Ferromagnetic Insulator/Metal Multilayers
Co-authors: Tao Liu, Yaowen Liu

[M2] Natalia Stepina 
Electron Localization in Si/Ge Quantum Dot Structures with Different G-Factors
Co-authors: Aigul Zinovieva, Alexander Nikiforov, Vyachelav Timofeev, Aleksei Nenashev, Anatoly Dvurechenskii, Leonid Kulik, Natalia Stepina …

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Transport in Heterostructures

Click here to view Abstracts

[M3] Zlatan Aksamija
Phonon Thermal Transport in SiGe-Based Nanocomposites for Thermoelectric Applications
Co-authors: N/A

[M4] Alex Aparecido Ferreira
Effect of the Scattering of Electrons on the Variable Range Hopping Electrical Conduction
Co-authors: N/A

[M5] Thomas Arend
Terahertz Electromodulation Spectroscopy of Carrier Transport
Co-authors: Stefan Engelbrecht, Roland Kersting

[M6] Bekele Badada
Probing Excitonic Transitions in Photosensitive Single Quantum Well Tube Nanowire Devices at Low Temperatures 
Co-authors: Teng Shi, Howard Jackson, Leigh Smith, Jan Yarrison-Rice, Nian Jiang, Qiang Gao, H. Hoe Tan, Chennupati Jagadish

[M7] Andreas Betz
High-Frequency Characterization of Thermionic Charge Transport in Silicon-on-Insulator Nanowire Transistors 
Co-authors: Quentin Wilmart, Bernard Placais, Sylvain Barraud, Xavier Jehl, Marc Sanquer, M. Fernando Gonzales-Zalba 

[M8] Guo-an Cheng
Thermoelectric Properties of Porous Silicon Nanowire Arrays
Co-authors: Ting Zhang, Rui-ting Zheng, Xiao- ling Wu

[M9] Boya Cui
Fourier-Domain Mobility Spectrum Analysis (FDMSA) of Type II InAs/GaSb Superlattice with Mixed Electron & Hole Conduction 
Co-authors: Yang Tang, C. Charpentier, C. Reichl, L. Tiemann, W. Wegscheider, M. Grayson

[M10] Nadine Erhard 
Ultrafast Photocurrents in Graded InGaN Nanowires with High Internal Electric Fields 
Co-authors: A.T.M. Golam Sawar, Stefan Zenger, Helmut Karl, Roberto C. Myers, Alexander W. Holleitner

[N1] Saskia Fischer
Noise Thermometry in Narrow Two-Dimensional Electron Gas Heat Baths Connected to a Quasi-One-Dimensional Interferometer
Co-authors: Christian Riha, Sven Buchholz, Olivio Chiatti, Dirk Reuter, Andreas Wieck, Elmar Sternemann

[N2] Fernando Iikawa
Optical Phonon Modulation by Surface Acoustic Waves
Co-authors: Alberto Hernández-Mínguez, Manfred Ramsteiner, Paulo Ventura Santos

[N3] Jesus Inarrea 
Theoretical Approach to Giant Negative Magnetoresistance in Ultra-High-Mobility 2D Electron Systems 
Co-authors: N/A

[N4] Jesus Inarrea 
Re-Emission of Radiation from Photo Excited 2DES
Co-authors: N/A

[N5] Norihisa Ishida 
DC Field Response of Highly Accelerated Hot Carriers Under Circularly Polarized Intense Microwave Fields & Magnetic Fields in Quantum Wells 
Co-authors: N/A

[N6] V. Kochelap 
Electric Current & Noise in Long AlGaN/GaN Nanowires Under Space-Charge-Limited Transport 
Co-authors: Svetlana Vitusevich, M Petrychuk, V Sydoruk, A. Belyaev, H Hardtdegen, Th Schäpers

[N7] Monika Kotzian 
Two-Path Transport Measurements on a Triple Quantum Dot 
Co-authors: Maximilian C. Rogge, Rolf J. Haug

[N8] Hauke Lehmann 
Electrical Characterization of Colloidal CdSe-Pt Hybrid Nanoparticles 
Co-authors: Michaela Meyns, Christian Klinke

[N9] Valeria Liverini 
Resonance Effects in Injection from QW to Quantum Dashes by Magneto-Tunneling in RTD 
Co-authors: Gian Lorenzo Paravicini Bagliani, Valeria Liverini, Federico Valmorra, Giacomo Scalari, Laurant Nevou, Keita Otani, Matthias Beck, Fabian Gramm, Jérôme Faist

[N10] Christopher Morrison 
Transport Properties of Intentionally Undoped Ge Quantum Well Heterostructures
Co-authors: Maksym Myronov. Jamie Foronda, Stephen Rhead, David Leadley

[O1] Maksym Myronov 
Revealing Groundbreaking Room Temperature 2DHG Mobility in a Strained Germanium Quantum Well 
Co-authors: Christopher Morrison, John Halpin, Stephen Rhead, David Leadley

[O2] Gustav Nylund 
Towards Nanowire-Based One-Dimensional Electron Ratchets 
Co-authors: Sebastian Lehmann, Kristian Storm, Lars Samuelson

[O3] Kevin S. Olsson 
Combined Raman & Brillouin Light Scattering Spectra as Temperature Sensors for Optical & Acoustic Phonons in Silicon 
Co-authors: Nikita Klimovich, Kyongmo An, Sean Sullivan, Annie Weathers, Li Shi, Xiaoqin Li

[O4] Mariama Rebello Sousa Dias 
Phase Time Transport Properties in Strained Twin-Plane Nanowires
Co-authors: Leonardo K. Castelano, Victor Lopez-Richard, Leovildo L. Diago-Cisneros, Gilmar E. Marques

[O5] R. R. Rey-González
Electronic Current through Disordered DNA Segments. A Theoretical Approach
Co-author: Carlos A. Plazas 

[O6] Stefan Riedi 
Optimizing Cleaved Edge Overgrowth for Quantum Wire Fabrication 
Co-authors: Adrian Maier, Christian Reichl, Stefan Fält, Werner Wegscheider

[O7] Stefano Roddaro 
Scanning Gate Imaging of the 0.7 Anomaly 
Co-authors: Andrea Iagallo, Nicola Paradiso, Christian Reichl, Werner Wegscheider, Giorgio Biasiol, Lucia Sorba, Fabio Beltram, Stefan Heun

[O8] Sergey Rudin 
Ultimate Bandwidth of High Electron Mobility Transistors
Co-authors: Greg Rupper, Michael Shur

[O9] A. Sachenko
A Novel Mechanism for Ensuring the Ohmicity of Contacts to n-InP & n-GaAs over a Wide Range of Temperatures down to Helium One: Experiment & Theory
Co-authors: A Belyaev, N Boltovets, Svetlana Vitusevich, R Konakova, S. Novitskii, V Sheremet

[O10] Heping Shen 
Study of Energetic Alignment in TiO2/SnS Quantum Dot Heterojunction & Its Application in Solar Cells 
Co-authors: Yoshiaki Oda, Jianbao Li, Mitsumasa Iwamoto, Hong Lin

[P1] Yanbing Shi 
Nonequilibrium Phonon Effects on Electron Transport in Mid-Infrared Quantum Cascade Lasers
Co-authors: Irena Knezevic

[P2] Kiran Shrestha
Electrical Transport & Structural Properties of p-type Amorphous Silicon Thin Films
Co-authors: Chris Littler, Vincent Lopes, Athanasios J. Syllaios

[P3] Fabricio M. Souza 
Nonequilibrium Transport in a Quantum Dot Attached to a Majorana Bound State 
Co-authors: Shirsley Silva, Jordan Del Nero, Antonio Seridonio

[P4] Ratnakar Vaidya 
Piezoelectric & Spontaneous Polarization Fields & Thermoelectric Power of III-Nitride Heterostructures 
Co-authors: Nandkumar Sankeshwar, Basavraj Mulimani

[P5] Xiao-Tao Xie
Effects of Excitation Frequency on the Plateau of High-Order Terahertz Sideband in Semiconductors
Co-authors: Ren-Bao Liu

[P6] Jong-Hyuk Yim 
Polarized & Phase Controlled Terahertz Emission from InAsP Nanowire Schottky Diode
Co-authors: Jeongwoo Hwang, Kyoung-Gu Min, Hyeong-Yong Hwang, Jae Cheol Shin, Young-Dahl Jho 

[P7] Gwangsu Yoo
Negative-$U$ Charge Kondo Effect in a Triple Quantum Dot
Co-authors: Jinhong Park, S.-S. B. Lee, H.-S. Sim

[P8] C.L Yu 
Electron & Hole Transport in an InSb Nanowire Quantum Dot Coupled to Nb Contacts ooo
Co-authors: M.T Deng, P. Caroff, H.Q Xu


Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Two Dimensional Systems Beyond Graphene
Click here to view Abstracts

[P9] Rostislav Doganov 

Mechanical & Electronic Transport Properties of Exfoliated Black Phosphorus in Ambient Conditions
Co-authors: Steven P. Koenig, Hennrik Schmidt, Barbaros Oezyilmaz

[P10] Mustafa Eginligil
Photocurrent Studies of Excitons in Monolayer Molybdenum Disulphide Phototransistors by Light Polarization
Co-authors: Bingchen Cao, Xianon Shen, Zilong Wang, Cesare Soci, Ting Yu

[Q1] Andrei Kudriavtcev
Quantum Point Contact Formation in Breakdown Regime of Silicon Nanostructures
Co-authors: Nikolay Bagraev, Leonid Klyachkin, Anna Malyarenko, Eduard Danilovskii

[Q2] Jae-Ung Lee

Thickness & Resonance Effects on Raman Spectra of MoS2 Thin Films
Co-authors: Jaesung Park, Hyeonsik Cheong

[Q3] Nan Ma
Carrier Statistics & Charge Transport in 2D Crystal Semiconductors
Co-author: Debdeep Jena

[Q4] Jacek Majewski
The Properties of 2D Graphene-BN System Studied by First-Principle Calculations
Co-authors: Nevill Gonzalez Szwacki 

[Q5] Shin Mou
Raman & AFM Studies on Chemically Synthesized MoS2
Co-authors: Don Abeysinghe, Joshua Myers, Lawrence Grazulis, Elizabeth Moore, Donald Dorsey, Yan Zhuang, Lain-Jong Li

[Q6] Doron Naveh
Tuning of Electronic Properties in Transition Metal Dichalcogenide Layers 
Co-authors: Moshe Kirshner

[Q7] Eric Parzinger
Inelastic Light Scattering & Optoelectronic Properties of MoS2 
Co-authors: Bastian Miller, Marina Hoheneder, Alexander Holleitner, Ursula Wurstbauer

[Q8] Laurent Pedesseau
Dielectric Profiles & Exciton Confinement in Colloidal Nanoscale Platelets of CdSe
Co-authors: Jacky Even, Nikolay Gippius, Ramzi Benchamekh, M. Nestoklon, Jean-Marc Jancu, Benoit Dubertret, A. Efros, Paul Voisin

[Q9] Angela Rojas-Cuervo 
Asymmetric Dirac Cones in Monatomic Hexagonal Lattices. A DFT Study
Co-authors: K M Fonsecas Romero, R. R. Rey-González

[Q10] Angela Rojas-Cuervo 
Is There a New Band-Gap Engineering Using III-V Compounds? An ab Initio Study
Co-author: Rafael Rey-Gonzalez

[R1] Alexey Suslov
Effect of In-Plane Magnetic Field on the Cyclotron Mass & G-Factor in p-SiGe/Ge/SiGe
Co-authors: Irina Drichko, Vitaly Malysh, Ivan Smirnov, Leonid Golub, Sergey Tarasenko, Oleg Mironov, Matthias Kummer, Hans von Känel

[R2] Maxim Trushin
Charge Transport in Two Dimensions Limited by Strong Short-Range Scatterers: Going Beyond Parabolic Dispersion & Born Approximation
Co-authors: Janik Kailasvuori, Bretislav Sopik

[R3] Amithraj Valsaraj
DFT Study of the Effect of HfO2 on Monolayer MoS2
Co-authors: Jiwon Chang, Leonard Frank Register, Sanjay Kumar Banerjee

[R4] Zhong Wan
Induced Superconductivity in High Mobility 2D Electron Gas in GaAs/AlGaAs Heterostructures
Co-authors: Michael Manfra, Loren Pfeiffer, Ken West, Leonid Rokhinson

[R5] Kaiyou Wang
Strong Enhancement of Photodetectors Based on Two Dimensional Materials GaSe 
Co-authors: YuFei Cao, Kaiming Cai, Xinhui Zhangpingan Hu

[R6] Darshana Wickramaratne
Bulk to Monolayer Thermoelectric Properties of Semiconducting Transition Metal Dichalcogenides
Co-authors: Ferdows Zahid, Roger K Lake

[R7] Andrey Zabolotnykh
Microwave Response of 2D Electron System Due to Bernstein Magnetoplasma Modes
Co-author: Vladimir Volkov

[R8] Xinhui Zhang
Photoluminescence Emission & Exciton Dynamics in Monolayer WSe2
Co-authors: Kaiming Cai, Xinhui Zhang, Pingan Hu, Kaiyou Wang 

[R9] Sergio Ulloa
RKKY interaction in Transition Metal Dichalcogenides
Co-authors: Diego Mastrogiuseppe, Nancy Sandler

Tuesday August 12, 2014 17:00 - 19:00
Room EFG

17:00

IUPAP Meeting
Tuesday August 12, 2014 17:00 - 20:00
Room 14
 
Wednesday, August 13
 

07:30

Complimentary Coffee & Tea
Complimentary coffee and tea served outside Ballroom D. 

Wednesday August 13, 2014 07:30 - 09:30
Ballroom D – Outside

08:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts


Wednesday August 13, 2014 08:00 - 19:00
Ballroom D – Outside

08:30

Plenary III

8:30-9:10
Plenary: Masashi Kawasaki
Quantum Transport at Oxide Interfaces

We present our recent discovery of 3/2 and other fractional states with even denominator in an oxide heterostructure of MgZnO/ZnO. In this system, the discontinuity in spontaneous electric polarization of polar crystals accumulates two-dimensional electron gas at the interface. Progress in thin film technology enabled us to attain a mobility over 700,000 cm2/Vs [1]. Due to much large values of electron mass (0.3m0) and spin susceptibility (g = 1.9) in ZnO compared with those in GaAs (0.07m0 and -0.44), numbers of intriguing effects are realized. In the presentation, we describe that the strong correlation effect further enhances the g value to realize a cross-over of Zeeman and orbital energies, giving a birth of 3/2 state in this system. In the talk, we overview our activity on ZnO for the last decade and highlight the potential and richness of oxide interface research.

[1] For a review, Y. Kozuka, A. Tsukazaki, M. Kawasaki, "Challenges and opportunities of ZnO-related single crystalline heterostructures", Applied Physics Review, 1, 011303 (2013).

[2] J. Falson, D. Maryenko, B. Friess, D. Zhang, Y. Kozuka, A. Tsukazaki, J. H. Smet, M. Kawasaki, "Ddd even denominator fractional quantum Hall physics in ZnO", Submitted.

9:10-9:50
Plenary: Alberto Morpurgo
Exploring the Transport Properties of Organic Semiconductors in Single-Crystal Transistors & Interfaces

The impressive progress in the development of devices based on organic semiconductors has not been paralleled by our fundamental understanding of these materials. For instance, we do not know what determines the carrier mobility in a given molecular semiconductor, and why in some cases the carrier mobility is much larger than in others. This is largely due to the insufficient chemical purity and structural quality of materials used to realize practical devices. In this talk I will present an overview of work done during the last decade to explore the fundamental transport properties of organic semiconductors, which has relied on single-crystal devices of unprecedented purity and quality. Through the observation of different intrinsic transport properties in an increasingly larger number of compounds, this work has led to the identification of microscopic electronic processes that drastically affect transport in organic semiconductors, and to first controlled comparative studies of different materials. I will focus on the physical aspects that make organic semiconductors different from the more conventional organic compounds, and emphasize how the virtually unlimited availability of different molecules can be exploited to realize new, interesting physical electronic systems.



Session Chairs
AH

Allan H. MacDonald

The University of Texas at Austin

Speakers
MK

Masashi Kawasaki

Professor & Deputy Director, The University of Tokyo & RIKEN Center for Emergent Matter Science
Dr. Kawasaki has contributed significantly to developing advanced technologies for realizing atomic scale control in oxide thin film epitaxy. He has developed the combinatorial epitaxy technique which facilitates efficient means of fabricating many thin films with various compositions and/or structures on a substrate simultaneously. Based on these technologies, he has expanded the physics, functionality, and applications of the field of oxide... Read More →
AM

Alberto Morpurgo

Professor, Department of Condensed Matter Physics, Université de Genève
Professor Alberto Morpurgo is an expert in the investigation of the electronic properties of materials through the study of transport in nano-fabricated devices. He received his PhD in 1998 from the University of Groningen, where he worked on mesoscopic superconducting proximity effect and other aspects of mesoscopic physics (for which he was awarded the Miedema Prize for the best Dutch PhD thesis in condensed matter physics). After a two-year... Read More →


Wednesday August 13, 2014 08:30 - 09:50
Ballroom D

09:50

Break
Wednesday August 13, 2014 09:50 - 10:20
Assorted

10:20

Carbon: Nanotubes & Graphene II

Click here to view Abstracts

10:20-10:35
Oral: Meydi Ferrier
Crossover Between SU(2) & SU(4) Kondo Effects in a Carbon Nanotube Probed by Shot-Noise

Co-authors: Tomonori Arakawa, Rio Fujiwara, Tokuro Hata, Kensuke Kobayashi, Richard Deblock, Raphaelle Delagrange, Helene Bouchiat, Rui Sakano, Akira Oguri

10:35-10:50
Oral: Duk-Hyun Choe
The Universal Conductance Fluctuation in the presence of Spin-Orbit Interactions in Graphene

Co-authors: Kee Joo Chang

10:50-11:05
Oral: Rohit Hegde
The Negative Energy Sea & the N=0 Quantum Hall Effect in Bilayer Graphene

Co-authors: Inti Sodemann, Fengcheng Wu, Allan MacDonald

11:05-11:20
Oral:
Anastasia Varlet
Tunable Fermi surface topology in gapped bilayer graphene

Co-authors: Dominik Bischoff, Pauline Simonet, Thomas Ihn, Klaus Ensslin, Marcin Mucha-Kruczynski, Vladimir Fal’ko, Kenji Watanabe, Takashi Taniguchi

11:20-11:50
Invited: Alexey Belyanin
Efficient Nonlinear Generation of Surface Plasmons in Graphene & Topological Insulators

Two-dimensional materials with massless Dirac electrons such as graphene and topological insulators support surface plasmon modes with a number of peculiar properties making them an attractive alternative to metal plasmonics. Here we show that a coherent surface plasmon mode guided by graphene or a topological insulator surface can be excited with high efficiency through the second-order nonlinear process of difference frequency generation (DFG). Although graphene is an isotropic medium for low-energy electron excitations, the second-order nonlinear susceptibility becomes non-zero when its spatial dispersion is taken into account. In this case the anisotropy is induced by the in-plane wave vectors of obliquely incident or in-plane propagating electromagnetic waves. The dispersion curves of surface plasmons strongly deviate from the photon dispersion already at THz frequencies, leading to a tight vertical confinement and large in-plane wave vector which can be matched to the sum of the photon wave vectors at mid- or even near-IR frequencies. This enables phase-matched DFG of THz plasmons with counter-propagating pump fields. The DFG process can reach efficiencies of 0.01/W and is broadly tunable by gating or varying an angle of incidence.

X. Yao et al. Phys. Rev. Lett. 112, 055501 (2014).

Co-authors: Xianghan Yao, Mikhail Tokman

11:50-12:05
Oral: Artsem Shylau
Plasmon-Mediated Coulomb Drag Between Graphene Waveguides

Co-authors: N/A

12:05-12:20
Oral: Yuki Koseki
Damping Mechanism of Terahertz Plasmons in Graphene on Heavily-Doped Substrate

Co-authors: Akira Satou, Victor Ryzhii, Vladimir Vyurkov, Taiichi Otsuji 

Session Chairs
RC

Rodrigo Capaz

Universidade Federal do Rio de Janeiro

Speakers
AB

Alexey Belyanin

Professor, Department of Physics & Astronomy, Texas A&M University


Wednesday August 13, 2014 10:20 - 12:20
Room 17B

10:20

Electron Devices & Applications IV
Click here to view Abstracts

10:20-10:50

Invited: Asif Islam Khan
Negative Capacitance: Exploiting Stored Energy in Ferroelectric Materials to Break Fundamental Barriers of Energy Efficiency in Electronic Devices

In 2008, we theoretically predicted that it could be possible to stabilize a ferroelectric material at a state of negative differential capacitance, which when used as a gate insulator in a MOSFET, could reduce the subthreshold swing below the otherwise fundamental 60 mV/decade. Reducing the swing below 60mV/decade means that the overall supply voltage and power dissipation could be reduced significantly. The difference of this concept with other existing proposals to reduce the subtheshold swing in MOSFETs is that the mechanism of electron transport remains unchanged and therefore the speed of operation does not need to be traded off for lower energy dissipation. In the recent years, multiple experimental demonstration have established this concept from both fundamental and technological point of view. In this talk, I shall discuss the conceptual background and recent experimental studies regarding this concept. I shall also discuss challenges and open questions as we currently see them.

10:50-11:05
Oral: Kibog Park
Electron Tunneling Resistance in Edge Metal-Insulator-Metal Junctions Modulated by Underlying Ferroelectric Polarization Switching
Co-authors: Sungchul Jung, Youngeun Jeon, Han Byul Jin, Jung-Yong Lee, Jae-Hyeon Ko, Nam Kim, Daejin Eom

11:05-11:20
Oral: Matthieu Delbecq
Full Control of a Quadruple Quantum Dot Circuit Charge States in the Single Electron Regime
Co-authors: Takshi Nakajima, Tomohiro Otsuka, Shinichi Amaha, John Watson, Michael Manfra, Seigo Tarucha

11:20-11:35
Oral: Julien Basset
Single-Electron Double Quantum Dot Dipole-Coupled to a Single Photonic Mode
Co-authors: N/A

11:35-11:50
Oral: Lukas Fricke
In-Situ Error Accounting of a Single-Electron Pumping Circuit
Co-authors: Michael Wulf, Bernd Kaestner, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Uwe Siegner, Hans W. Schumacher

11:50-12:05
Oral: Dominique Laroche
1D-1D Coulomb Drag Signature of a Luttinger Liquid
Co-authors: Guillaume Gervais, Michael Lilly, John Reno

12:05-12:20
Oral: David Ting
Development of Quantum Structured Infrared Photodetectors 
Co-authors: Alexander Soibel, Sam Keo, Sir Rafol, Jason Mumolo, John Liu, Cory Hill, Arezou Khoshakhlagh, Linda Höglund, Sarath Gunapala 

Session Chairs
CM

Chiara Marchiori

Research Scientist & Scientific Project Lead, IBM Zurich Research Laboratory
Dr. Chiara Marchiori currently supports Matthias Kaiserswerth, director of IBM Research-Zurich, as his technical assistant. In parallel she conducts scientific research, writes and coordinates governmental and joint projects in the Advanced Functional Materials group. | | At IBM Research-Zurich, she leads the development of gate stacks suited for metal-oxide-semiconductor field-effect transistors based on high-mobility channels (III-V compound... Read More →

Speakers
AI

Asif Islam Khan

UC Berkeley


Wednesday August 13, 2014 10:20 - 12:20
Room 19B

10:20

IUPAP Young Scientist Award Session
10:20-10:50
Invited: Xiaodong Xu
Spin & Pseudospins in 2D Semiconductors
Co-authors: Galan Moody, Sanfeng Wu, Yanwen Wu, Nirmal Ghimire, Jiaqiang Yan, David Mandrus, Xiaoqin Li

Electronic valleys are extrema of Bloch energy bands in momentum space. Having multiple valleys gives the electron states pseudospin degrees of freedom in addition to their real spin. In this talk, I will discuss our experimental progress on the investigation of spins and pseudospins using atomically thin semiconductors, which are either single or bilayer group VI transition metal dichalcogenides. These new 2D semiconductors behave as remarkable excitonic systems, providing an exciting laboratory for optical manipulation and electrical control of the valley degrees of freedom. I will also discuss strong coupling effects between spin, valley, and layer pseudo-spins in bilayers, which lead to enhanced lifetimes and allow electrical control of spin states.

Co-authors: Galan Moody, Sanfeng Wu, Yanwen Wu, Nirmal Ghimire, Jiaqiang Yan, David Mandrus, Xiadong Xu, Xiaoqin Li

10:50-11:20
Invited: Rahul Raveendran Nair
Novelties in Two Dimensions

In my talk, I will mainly discuss the novel properties of various two dimensional materials. Graphene, the first discovered two dimensional crystal, continues to attract intense interest that has expanded into research areas beyond the initial studies of graphene’s electronic transport properties. Here, I will discuss the structural, optical and electronic properties of graphene and other two dimensional materials derived from graphene. Second part of my talk will focus the magnetic properties of graphene. I will review our recent experiments on inducing and controlling magnetic response in graphene. Graphene is hailed as potentially an ideal material for spintronics due to its weak spin-orbit interaction and the ability to control its electronic properties by the electric field effect. We show that, despite the absence of d- or f- electrons normally associated with magnetism, it is possible to induce magnetic response in graphene via introduction of point defects such as vacancies and adatoms. We have demonstrated that both vacancies and adatoms in graphene carry magnetic moments, leading to pronounced paramagnetic behaviour that dominates its low-temperature magnetism. Even better, we show that the defect magnetism is itinerant (i.e. due to localisation of conduction electrons) and can be controlled by doping, so that the induced magnetic moments can be switched on and off. This not only adds important functionality to potential graphene devices but also has important implications for spin transport. 

11:20-11:50
Open

11:50-12:20
Open 

Session Chairs
ML

Mike L. W. Thewalt

Professor, Simon Fraser University
Michael L. W. Thewalt is a Canadian physicist. He received his BSc from McMaster University in 1972. His MSc and PhD were from the University of British Columbia in the mid-1970s. He teaches at Simon Fraser University and is known for researching semiconductors, especially isotopically enriched silicon.

Speakers
RR

Rahul Raveendran Nair

Leverhulme Fellow, School of Physics & Astronomy, The University of Manchester
Dr. R. R. Nair received his PhD from the University of Manchester in 2010. Currently he is a member of academic staff in the School of Physics and Astronomy at the University of Manchester. In 2012 he was awarded a prestigious Leverhulme Research Fellowship and will take up a 5-year Royal Society University Research Fellowship from October 2014. He is an expert in optical, magnetic and membrane properties of graphene and other 2D... Read More →
XX

Xiaodong Xu

Assistant Professor, Department of Physics & MSE, University of Washington
Xiaodong Xu joins the Materials Science & Engineering in the fall of 2010 from Cornell University, where he was a postdoctoral research associate. | | Xu's research interests focus on optoelectronic, spintronic, and photovoltaic applications of carbon-based nanomaterials. Spin-based electronics (spintronics) has made a huge impact on memory storage systems. Xu's work contributes to the goal of miniaturizing spintronics to the level of a... Read More →


Wednesday August 13, 2014 10:20 - 12:20
Room 16B

10:20

Narrow-Gap Semiconductor I
Click here to view Abstracts

10:20-10:50

Invited: Lars-Erik Wernersson
Narrow Gap Semiconductors: From Nanotechnology to RF-Circuits on Si
Co-authors: N/A

The family of narrow gap semiconductors have a unique set of materials properties including large electron or hole mobility, narrow band gaps, and intriguing band alignments that we may use for high performance electron devices, long wavelength optoelectronic devices, or sophisticated quantum devices. The lack of suitable substrates is, however, a limiting factor. Nanotechnology offers unprecedented possibilities for material integration as the requirement of lattice matching is relaxed. In this presentation we will demonstrate how we have explored the MOVPE growth of narrow bandgap nanowires and implemented a number of devices. The introduction of Antimon changes the growth characteristics significantly and affects the nanowire diameter and crystal structure. A wide range of materials combinations have been realized and the unique electrostatic control in the nanowire geometry has been used to implement a number of advanced transistor architectures on a Si platform. Highlights: -Nanowire growth of InSb, GaSb, and their alloys using stems of InAs and GaAs, respectively. -Realization of InAs/GaSb broken gap Tunnel Field-Effect Transistors in axial and radial configuration with record on-state performance. -Implementation of CMOS inverters in individual nanowires consisting of InAs and GaSb segments. -Operation of InAs-based RF-mixers on Si substrates. -Demonstration of long wavelength photoconduction in InAsSb nanowires.

10:50-11:05
Open

11:05-11:20
Oral: 
Jose Menendez
Group-IV Semiconductors with Sn: Band Gap Studies & Structural Properties
Co-authors: James Gallagher, Liying Jiang, Chi Xu, John Kouvetakis

11:20-11:35
Oral: Bela Kvirkvelia
Electrical Properties & Crystal Perfection of the n-type Si-rich SiGe Alloys Bulk Single-Crystals
Co-authors: Elza Khutsishvili, Leonti Gabrichidze, Bela Kvirkvelia, Gulnara Urushadze, George Kekelidze, Nodar Kekelidze

11:35-11:50
Oral: Christopher Broderick
Theory of the Electronic Structure of the Dilute Bismide Alloy GaBiAs
Co-authors: Muhammad Usman, Eoin O'Reilly

11:50-12:05
Oral: Dmitry Khokhlov
Terahertz Probing of Local Electron States in Doped Lead Telluride-Based Semiconductors 
Co-authors: Svetlana Egorova, Vladimir Chernichkin, Ludmila Ryabova, Andrey Nicorici, Sergey Danilov 

12:05-12:20
Open 

Session Chairs
WR

William Rice

Los Alamos National Laboratory

Speakers
LW

Lars-Erik Wernersson

Professor & Nanoelectronics Research Group Director, Lund University
Lars-Erik Wernersson is directing a research group in Nanoelectronics in Lund working with applications of nanotechnology in IT. He has activities both related to nanoscience at the Physics Department and to hardware implementation at the Electrical- and Information Technology Department. He has been scientific coordinator and co-PI in several major research programs at either department, for instance Quantum Materials (SSF), Nano-Science for... Read More →


Wednesday August 13, 2014 10:20 - 12:20
Room 19A

10:20

Optical Properties of Heterostructures I
Click here to view Abstracts

10:20-10:50

Invited: Michael E. Flatté
Spin-Orbit Induced Circulating Currents in a Semiconductor Nanostructure
Co-authors: Joost van Bree, Andrei Silov, Paul Koenraad

Spin-correlated orbital currents dramatically modify the magnetic moment of an electron spin in many semiconductors, often enhancing the moment by an order of magnitude over its free-electron value. This modified magnetic moment is parametrized as a shape, size and composition dependent g tensor. Despite the central nature of g tensors to high-speed spin manipulation, spin lifetimes, and quantum computation, the spatial structure of the spin-correlated orbital currents that determine these g tensors has not been investigated. The most natural assumption, that the moment's value at a position in space is proportional to the probability density of the spin, is incorrect. Here we describe calculations of the spatial distribution of spin-correlated orbital currents for electron spin states of a quantum dot, and show that itinerant currents are extended throughout the quantum dot, peaking about midway out from the center of the dot. The electronic states are obtained within an analytically-solvable envelope-function formalism, and the magnetic moment is primarily due to itinerant currents originating from coherent superpositions of conduction and valence envelope functions, rather than from magnetic moments associated with the Wannier functions of each unit cell. For example, the spin of a quantum dot with g=0 will still evince a local magnetic moment that could interact with nearby localized magnetic systems.

10:50-11:05
Oral: Marc-Andre Dupertuis
Symmetries & Optical Transitions of Hexagonal Quantum Dots in GaAs/AlGaAs Nanowires
Co-authors: Guro Kristin Svendsen, Johannes Skaar, Helge Weman

11:05-11:20
Oral: A.R. Goni
Using High Pressure to Unravel the Mechanism of Visible Emission in Amorphous Si/SiOx Nanoparticles
Co-authors: Daiki Sodeoka, Hideki Kuruma, Masahiro Yoshimoto, María Isabel Alonso, Miquel Garriga, Alejandro R. Goni

11:20-11:35
Oral: Hubert Krenner
Full Acoustic Control of Quantum Dot-Like Emission Centers in GaAs/AlGaAs Radial Heterostructure Nanowires
Co-authors: Matthias Weiss, Jörg Kinzel, Florian Schülein, Daniel Rudolph, Jonathan Finley, Gerhard Abstreiter, Gregor Koblmüller, Achim Wixforth

11:35-11:50
Oral: Paulina Plochocka
Unintentional p-type Doping of a GaAs/AlAs Core-Multi-Shell Nanowire Revealed by Resonant Phonon Coupling
Co-authors: Joanna Jadczak, Anatolie Mitioglu, Ivan Breslavetz, Miquel Royo, Andrea Bertoni, Guido Goldoni, Tomasz Smolenski, Piotr Kossacki, Andrey Kretinin, Hadas Shtrikman, Duncan Maude

11:50-12:05
Oral: Malgorzata Szymura
Zeeman Splitting Anisotropy in CdMnTe Quantum Dots Embedded in ZnTe Nanowires
Co-authors: Łukasz Kłopotowski, Piotr Wojnar, Mateusz Goryca, Piotr Kossacki, Wojciech Zaleszczyk, Grzegorz Karczewski, Tomasz Wojtowicz, Jacek Kossut

12:05-12:20
Oral: B. D. McCombe
Effect of Location of Manganese Ions on Magnetic Polaron Properties in ZnTe/ZnSe Based Quantum Dot Structures 
Co-authors: B. Barman, J. R. Murphy, Y. TsaiT. Scrace, J. M. Pientka, A.N. Cartwright, I. Zutic, A. Petrou, W-C Chou, M-H Tsou, C-S Yang, I. R. Sellers, R. Oszwaldowski, A. G. Petukhov 

Session Chairs
UG

Ulf Gennser

Laboratoire de Photonique et de Nanastructures, CNRS
Ulf Gennser recieved his Ph.D. in 1992 from Columbia University (New York), working on resoant tunneling in SiGe heterostructures. He is currently the group leader of « Physics and Technology of Nanostructures » at the Laboratoire de Photonique et de Nanostructures, CNRS, France, and responsible for the molecular beam epitaxy of high mobility electronic systems. His main interest is in mesoscopic physics, and currently, among other... Read More →

Speakers
ME

Michael E. Flatté

Professor, University of Iowa
Michael E. Flatté is an expert in condensed matter and materials theory, specializing in carrier and spin dynamics and their applications to novel semiconductor devices. His research foci include semiconductor spintronics, solid-state quantum computation, carrier dynamics in semiconductor nanostructures, and nanoparticle dynamics in heterogeneous liquids. He has over 135 publications as well as 12 review articles/book chapters, 4... Read More →


Wednesday August 13, 2014 10:20 - 12:20
Room 16A

10:20

Quantum Optics, Nanophotonics V
Click here to view Abstracts

10:20-10:35
Oral: Bart de Nijs
Image Excitons & Plasmon-Exciton Strong Coupling in 2D Perovskite Semiconductors
Co-authors: Wendy Niu, Lindsey Ibbotson, David Leipold, Erich Runge, G. Vijaya Prakash, Jeremy Baumberg

10:35-10:50
Oral: Danqing Wang
Progress Towards Coupling of InGaN QDs & GaN Nanobeam Cavities
Co-authors: Tim Puchtler

10:50-11:20

Invited: Robert Stockill
Direct Photonic Coupling of a Quantum Dot & a Trapped Ion
Co-authors: Claire Le Gall, Matthias Steiner, Hendrik-Marten Meyer, Clemens Matthiesen, Jakob Reichel, Edmund Clarke, Arne Ludwig, Michael KohlMete Atature

Confined spins in solids and electronic states of single atoms present two well-studied, contrasting systems which may be suitable for the construction of a hybrid network of complementary quantum devices. However, their disparate physical properties raise the question of the feasibility of realising a direct interface. Here, we present the first successful photonic coupling between a semiconductor quantum dot (QD) and a single atom. We show that resonantly scattered photons from a self-assembled InGaAs QD can be absorbed by a single Ytterbium ion trapped in a high-finesse fibre-based cavity.

An optical link in the near-infrared is formed by bringing the quantum dot into resonance with an atomic Yb+ transition at 935 nm. By monitoring ion state transfer due to quantum dot photon absorption we extract photon absorption rates. We find a peak efficiency of above 1% per QD photon arriving at the ion-cavity system.

Whilst the natural spectral linewidths of the quantum dot and ion transitions differ by a factor of >60, sub linewidth emission spectra have been demonstrated from QDs through low power coherent scattering (s « 1), enabling bandwidth matching to the narrow ion transition. We study the extent to which efficient coupling relies on coherent scattering. Furthermore we observe ion absorption rates dependent on spin state preparation of a negatively charged quantum dot. Based on these results, the exchange of quantum information between these highly contrasting systems is within experimental reach.

11:20-11:35
Oral: Savvas Germanis
Near RT Emission from a Single Piezoelectric InAs Quantum Dot & Temperature Dependent Anti-Bunching Experiments
Co-authors: Léonard Monniello, Richard Hostein, Antonis Stavrinidis, George Constantinidis, Zacharias Hatzopoulos, Valia Voliotis, Nikos Pelekanos

11:35-11:50
Oral: Andreas V. Kuhlmann
Spin Noise in a Self-Assembled Semiconductor Quantum Dot
Co-authors: Jonathan H. Prechtel, Julien Houel, Arne Ludwig, Dirk Reuter, Andreas D. Wieck, Richard J. Warburton

11:50-12:05
Oral: Hidekazu Kumano
Second-Order & Bosonic Interference Properties of a Quantum Dot with Silver Microcolumnar Photon Reflector
Co-authors: Liu Xiangming, Hideaki Nakajima, Satoru Odashima, Ikuo Suemune

12:05-12:20
Stephan Kapfinger
Radio Frequency Acousto-Mechanical Tuning of a Photonic Molecule 
Co-authors: Thorsten Reichert, Michael Kaniber, Jonathan J. Finley, Achim Wixforth, Hubert J. Krenner 

Session Chairs
GS

Glenn Solomon

University of Maryland

Speakers
RS

Robert Stockill

University of Cambridge


Wednesday August 13, 2014 10:20 - 12:20
Room 18AB

10:20

Spintronics & Spin Phenomena V
Click here to view Abstracts

10:20-10:50

Invited: Gregory Fuchs
Driving Diamond Nitrogen-Vacancy Center Spin Resonance with Mechanical Motion
Co-authors: Evan MacQuarrie, Tanay Gosavi, Sunil Bhave, Nicholas Jungwirth

We demonstrate direct mechanical driving of diamond nitrogen-vacancy (NV) center spins without mediation by a magnetic driving field [1]. Using a bulk-mode acoustic resonator fabricated from single crystal diamond, we exert 7 MPa of non-axial ac stress on NV centers positioned at an antinode of the 1 GHz mechanical mode. When we tune the ms = -1 to +1 spin state splitting energy into resonance with the mechanical frequency, we observe direct Δms = ±2 spin transitions, which are forbidden by the magnetic dipole selection rule. To rule out stray electric and magnetic fields as the origin of the spin transitions, we study the spin signal as a function depth within the diamond resonator. We find that the spin signal reproduces the periodicity of the mechanical standing wave, confirming a mechanical origin to the spin driving. This work demonstrates direct coupling between NV center spins and resonator phonons, which has potential for high frequency strain sensing, fundamental research into spin-phonon interactions at the nanoscale, and as a potential platform for hybrid spin-mechanical quantum systems.

[1] E. R. MacQuarrie, T. A. Gosavi, N. R. Jungwirth, S. A. Bhave, and G. D. Fuchs, Phys. Rev. Lett. 111, 227602 (2013).

10:50-11:05
Oral: Vincent Sacksteder
Hole Spin Helix: Anomalous Spin Diffusion in Anisotropic Strained Hole Quantum Wells
Co-authors: Andrei Bernevig

11:05-11:20
Oral: Ceyhun Bulutay
Nuclear Spin Environment in Strained InGaAs Quantum Dots
Co-authors: E. A. Chekhovich, A. I. Tartakovskii

11:20-11:35
Oral: Joerg Debus
Magneto-Optical Effects of Nitrogen Vacancies in Diamond
Co-authors: V. Yu. Ivanov, D. Braukmann, D. Dunker, V. L. Korenev, D. R. Yakovlev, M. BayerM. Godlewski

11:35-11:50
Oral: Juliana Marques Ramos
Hyperfine Parameters in Pure Fe-Doped TiO2
Co-authors: Reiner Vianden, Artur Wilson Carbonari, Thiago Martucci

11:50-12:05
Oral: M. A. Meeker
Time Resolved Magneto-Optical Studies of InAsP Alloys
Co-authors: B. A. Magill, T. R. Merritt, G. A. Khodaparast, S. McGill, J.G. Tischler, C. J. PalmstrØm

12:05-12:20
Oral: Anton Konakov
Influence of the Spin-Orbit Coupling on the Electronic Structure & Relaxation Processes in Silicon Nanocrystals 
Co-authors: Vladimir Belyakov, Kirill Sidorenko, Natalia Kurova, Vladimir Burdov 

Session Chairs
HD

Hanan Dery

Associate Professor of Electrical & Computer Engineering, University of Rochester
Hanan Dery, a specialist in the emerging field of spintronics, joined the Department of ECE in July, 2007. Previously, he was a Postdoctoral Associate in Lu Sham's group in the Department of Physics, University of California San Diego (UCSD). During this time, he worked on spintronics, seeking ways to integrate information based on electron spin into semiconductors. Dery earned his PhD in Electrical Engineering from Technion-Israel Institute of... Read More →

Speakers
GF

Greg Fuchs

Assistant Professor & Rebecca Q. & James C. Morgan Sesquicentennial Faculty Fellow, Cornell University
Fuchs earned his Ph.D. from Cornell University in 2007. Afterward, he moved to the University of California, Santa Barbara as a postdoctoral associate. In 2011, he joined the Cornell faculty of Applied and Engineering Physics. In 2012 he received a Young Investigator Award from the Air Force Office of Scientific Research, and in 2013 he received an Early Faculty Career Award from the National Science Foundation and the Presidential Early Career... Read More →


Wednesday August 13, 2014 10:20 - 12:20
Room 18CD

10:20

Transport in Heterostructures III

Click here to view Abstracts

10:20-10:35

Oral: Natalia Demarina
Magnetic-Field Dependent Oscillations of Conductivity of GaAs-InAs Core-Shell & InAs Shell nanowires
Co-authors: Mihail Lepsa, Detlev Gruetzmacher

10:35-10:50
Oral: Blair Connelly
Ultrafast Carrier Dynamics in InGaN/GaN p-i-n Heterostructures
Co-authors: Chad Gallinat, Grace Metcalfe, Nathaniel Woodward, Ryan Enck, Hongen Shen, Michael Wraback, Nathan Young, Robert Farrel, Michael Iza, Samantha Cruz, Jordan Lang, Yutaka Terao, Carl Neufeld, Stacia Keller, Shuji Nakamura, Steven DenBaars, Umesh Mishra, James Speck

10:50-11:05
Oral: Peter Eldridge
Spatial Variation in Carrier Dynamics Along a Single CdSSe Nanowire
Co-authors: Jolie Blake, Lars Gundlach

11:05-11:20
Oral: Malin Nilsson
Electron-Hole Transport in Core-Shell InAs-GaSb Nanowires
Co-authors: Luna Namazi, Sebastian Lehmann, Kimberly Dick Thelander, Claes Thelander

11:20-11:35
Oral: Stefanie Morkoetter
Transport in Modulation Doped Core-Shell GaAs-AlGaAs Nanowires
Co-authors: Daniel Rudolph, Eric Hoffmann, Dance Spirkoska, Markus Doeblinger, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley, Gregor Koblmueller

11:35-11:50
Oral: Abdelhakim Nafidi
Hall Effect & Negative Energy Gap in HgTe/CdTe Superlattice with Thick Quantum Wells
Co-authors: Aomar Idbaha, Abderrazak Boutramine, Driss Barkissy, Hassan Chaib, Hassan Sahsah, Bernabé Marí Soucase

11:50-12:05
Oral: Heiner Linke
Large Thermoelectric Power Factor Enhancement Due to Quantum-Dot-Like States in InAs Nanowires
Co-authors: Phillip Wu, Johannes Gooth, Xanthippi Zianni, Sofia Fahlvik Svensson, Jan Göran Gluschke, Kimberly Dick, Claes Thelander, Kornelius Nielsch

12:05-12:20
Oral: Valeria Liverini
Study of InAs/AlInAs Quantum-Dash-Based Cascade Structures by Electroluminescence & Magneto-Assisted Transport Measurements
Co-authors: Gian Lorenzo Paravicini Bagliani, Giancarlo Cerulo, Federico Valmorra, Keita Otani, Giacomo Scalari, Mattias Beck, Fabian Gramm, Jerome Faist 


Session Chairs
MC

Mario Capizzi

Sapienza University of Rome

Wednesday August 13, 2014 10:20 - 12:20
Room 17A

12:20

Lunch On Your Own
There are many restaurants & amenities within just a few blocks of the Austin Convention Center.
View this map to see the nearby options

Wednesday August 13, 2014 12:20 - 13:20
Assorted

13:30

Conference Excursions Around Austin
All tours will depart from the Austin Convention Center on Trinity Street by the corner of 4th Street and Trinity Street. Please arrive 15 minutes prior to the tour start time to check in. Be sure to bring photo identification in order to join the tour. 

13:30-15:15
Austin Surf N' Turf (A)

Explore the heart of downtown Austin and beautiful Lake Austin by land and sea. This tour of the city is a great opportunity to learn more about the Texas State Capitol, Bob Bullock Museum, and other Austin icons. 

13:30-15:45
Food Trailer Tasting

Visit and taste three different Austin food trailers, including those featured on TV as well as locals’ favorites.
**Lunch will be provided. Please note that you will be eating outside, so please dress appropriately for hot weather. 

14:00-16:30
Kayaking on Lady Bird Lake (A)

Enjoy a beautiful day outdoors by kayaking on Lady Bird Lake at your leisure. 
**Please be sure to wear appropriate clothing. You may get wet while kayaking; however, no swimming is allowed in the lake. 

14:00-17:15
Barton Springs Pool

Spend an afternoon enjoying Zilker Park and swimming in Austin’s natural, spring-fed pool, Barton Springs.
**Be sure to bring your swimsuit. Towels and light snacks will be provided. 

14:00-18:00
Hill Country Wineries

Tour and taste two of the best wineries in Texas’ Hill Country (located 45 minutes outside of Austin) with your own English-speaking sommelier. Each winery includes 3 – 5 tastings of regional Hill Country wines. 
**You must be 21 years of age or older to join this tour.  

14:00-18:30
San Marcos Premium Outlets Shopping

Be transported outside Austin to the San Marcos Premium outlets. Find impressive savings at over 130 stores at this shopping plaza located 45 minutes outside Austin city limits. 

14:30-16:45
Bob Bullock Texas State History Museum

Take a guided tour of the Bob Bullock Museum, the only place large enough to tell the whole “Story of Texas”! Named after Bob Bullock, a powerful and respected Texas politician, this museum is full of engaging exhibits that embody the history of Texas. 

15:30-17:15
Austin Surf N' Turf (B)

Explore the heart of downtown Austin and beautiful Lake Austin by land and sea. This tour of the city is a great opportunity to learn more about the Texas State Capitol, Bob Bullock Museum, and other Austin icons. 

16:00-18:00
ACL Live Music Venue

Take a private tour through the home of the legendary Austin City Limits Television Show, the longest-running music series in American television history.

16:00-18:30
Kayaking on Lady Bird Lake (B)

Enjoy a beautiful day outdoors by kayaking on Lady Bird Lake at your leisure.
**Please be sure to wear appropriate clothing. You may get wet while kayaking; however, no swimming is allowed in the lake.  

18:00-22:15
BBQ & Wine Tasting

Experience some down-home hospitality and superb BBQ for dinner at The Salt Lick. Taste some local Hill Country wine as well, featured at this nationally recognized BBQ restaurant (located 30 minutes outside of Austin). 
**Dinner will be provided. Please note that you will be eating outside, so please dress appropriately for warm weather. You must be 21 years of age or older to join this tour. 

19:00-20:45
Bat Watching Cruise

The Congress Avenue Bridge is the home of the largest urban bat colony in North America. Grab the best seat in the house on a cruise to view one of the most incredible wildlife spectacles in the world! 

Wednesday August 13, 2014 13:30 - 22:15
Assorted

18:00

Conference Reception & Dinner: Darrell K Royal-Texas Memorial Stadium
If you purchased a ticket for the conference dinner.

18:15-19:00 - Social Hour & Entertainment
19:00-20:00 - Dinner
19:45-20:30 - Entertainment

Entertainment will be provided by the Cody Bryan Band (http://ctkentertainment.com/artists/cody-bryan-band/). Lead singer Cody Bryan is a UT Austin graduate in civil engineering.

Shuttle buses to the Darrel K Royal-Memorial Stadium will begin at 17:45 at the Austin Convention Center. Bus pickup will be located on the 4th and Trinity side of the Austin Convention Center. Buses will run every 30 minutes. 

Shuttle buses back to the Austin Convention Center will begin at 21:00 outside Gate 16 of the Darrell K Royal-Texas Memorial Stadium. Buses will run every 30 minutes. Last bus to depart at 21:30.

Conference Dinner Menu

Passed appetizers: Assorted quiche
Dinner: Texas Field Greens with Creamy Ranch Dressing, Homestyle Potato Salad, Creamy Coleslaw, Boneless Barbecue Chicken and Beef Brisket, Grilled Spicy Elgin Sausage in Barbecue Sauce, Southwest Style Corn and Spicy Ranch Beans, Jalapeno Corn Bread and Honey Butter
Dessert: Chef's Cobbler with Whipped Cream
Iced Tea and Coffee Service

Vegetarian Options: Southwestern Spinach and Corn Enchiladas with Roasted corn butter and arbol vinaigrette **Availability is limited based on specific requests

**If you have registered for a vegetarian/vegan/gluten-free or other dietary restricted meal, please alert a server at the Touchdown Club.  

Wednesday August 13, 2014 18:00 - 20:00
Assorted
 
Thursday, August 14
 

07:30

Complimentary Coffee & Tea
Complimentary coffee and tea served outside Ballroom D. 

Thursday August 14, 2014 07:30 - 09:30
Ballroom D – Outside

08:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts




Thursday August 14, 2014 08:00 - 17:00
Ballroom D – Outside

08:30

Carbon: Nanotubes & Graphene III

Click here to view Abstracts

8:30-8:45

Oral: Xiaowei He
Terahertz Detector Based on a p-n Junction Film of Aligned Carbon Nanotubes
Co-authors: Naoki Fujimura, Kristopher Erickson, A. Alec Talin, Qi Zhang, Weilu Gao, Yukio Kawano, Robert H Hauge, Francois Leonard, Junichiro Kono

8:45-9:00
Oral: Akram Mahjoub
Graphene FET Based Sensor for THz Detection
Co-authors: Shinichi Suzuki, Nobuyuki Aoki, Katsuhiko Miyamoto, Tomohiro Ymaguchi, Takashige Omatsu, Jonathan Bird, David Ferry, Koji Ishibashi, Yuichi Ochiai

9:00-9:15
Oral: Ramesh Mani
Resistively Detected Hole Spin Resonance in Epitaxial Graphene
Co-authors: John Hankinson, Claire Berger, Walter A. de Heer

9:15-9:30
Oral: Yuya Shimazaki

Nonlocal Transport in Dual-Gated Bilayer Graphene
Co-authors: Michihisa Yamamoto, Kenji Watanabe, Takashi Taniguchi, Seigo Tarucha

9:30-9:45
Oral: Simon Maero
Magneto-Optical Signature of Disorder in Epitaxial Graphene
Co-authors: N/A

9:45-10:00
Oral: Min-Ho Jang
Comparative Luminescence Mechanism of Graphene-Based Quantum Dots with & without Oxygen Functional Groups
Co-authors: Hyun Dong Ha, Fei Liu, Tae Seok Seo, Yong-Hoon Cho

10:00-10:15
Oral: Pilkyung Moon
Optical Spectrum of the Hofstadter Butterfly in the Moire Superlattice
Co-author: Mikito Koshino

10:15-10:30
Oral: Takeshi Nakanishi
Collapsed Carbon Nanotubes as Bilayer Graphene with Closed Edges
Co-author: Tsuneya Ando 


Session Chairs
AO

Atsushi Oshiyama

Professor, Department of Applied Physics, The University of Tokyo
Atsushi Oshiyama is a professor at Department of Applied Physics in The University of Tokyo. He has been working in the field of computational materials science and condensed matter physics (http://oshiyama.t.u-tokyo.ac.jp/index-e.html). He is interested in cross-disciplinary collaboration among materials scientists and computer scientists, and now heads a research project, Materials Design through Computics... Read More →

Thursday August 14, 2014 08:30 - 10:30
Room 16B

08:30

Electron Devices & Applications V
Click here to view Abstracts

8:30-9:00

Invited: Marco Piccardo
Determination of the Origin of Efficiency Droop in GaN LEDs by Electron Emission Spectroscopy
Co-authors: Jacques Peretti, Lucio Martinelli, Justin Iveland, James Speck, Claude Weisbuch, Marco Piccardo

In hot-electron semiconductor devices, carrier transport extends over a wide range of conduction states which often includes multiple satellite valleys. Electrical measurements can hardly give access to the transport processes over such a wide range without resorting to models and simulations. An alternative experimental approach however exists which provides, in a number of cases, very direct and selective information on hot-electron transport mechanisms. This approach based on low-energy electron spectroscopy was initially developed for the study of negative electron affinity semiconductor photocathodes and spin-polarized electron sources. We will here discuss recent electron emission spectroscopy results obtained in GaN LEDs. We show that the measurement of the electron spectrum emitted from the device under electrical injection of carriers provides a direct observation of hot-electron transport processes in the device. In particular, at high injected current density, high-energy features appear in the electro-emission spectrum simultaneously with the drop in light emission efficiency known as the droop phenomenon. These measurements evidence multivalley transport processes, as confirmed by complementary photoemission experiments, and allow us identifying the microscopic mechanism responsible for the droop which represents a major hurdle for widespread adoption of solid-state lighting.

9:00-9:15
Oral: M. Nazari
Self-Heating in a Two-Dimensional Electron Gas at the Interface Between GaN & AlGaN Studied by Ultraviolet & Visible Micro-Raman Scattering
Co-authors: Bobby Hancock, Edwin Piner, Jordan Berg, Mark Holtz

9:15-9:30
Oral: Masahiko Taguchi
Quantum Adiabatic Pumping with Tunneling Phase in Quantum Dot System
Co-authors: Satoshi Nakajima, Toshihiro Kubo, Yasuhiro Tokura

9:30-9:45
Oral: Logan Hancock
Junction Temperature & Electroluminescence Measurements in High Brightness Ultraviolet Light-Emitting Diodes
Co-authors: Bobby Hancock, Edwin Piner, Jordan Berg, Mark Holtz

9:45-10:00
Oral: Alexander Andrianov
Terahertz Electroluminescence from SiC p-n-Junctions Induced by Current Injection
Co-authors: Jay Gupta, James Kolodzey, Vladimir Sankin, Alexey Zakhar'in, Yury Vasilyev

10:00-10:15
Oral: Reuben Puddy
Multiplexing Large Arrays of Tunable Quantum Dots
Co-authors: Luke Smith, Haider Al-Taie, David Ritchie, Ian Farrer, Geb Jones, Michael Kelly, Michael Pepper, Charles G. Smith

10:15-10:30
Oral: Giancarlo Cerulo
Current Saturation Dependence on Self-Assembled Quantum Dot Density in Optically-Driven Electron Turnstiles 
Co-authors: Valeria Liverini, Laurent Nevou, Peter Friedli, Mattias Beck, Hans Sigg, Fabian Gramm, Jérôme Faist 

Session Chairs
DM

Dennis M. Newns

IBM Research Center
Dr. Newns received his Ph.D. degree in physical chemistry from Imperial College, London, in 1967. He subsequently held research positions at the University of Chicago and Cambridge University, and then held academic positions at Imperial College until joining the research staff of IBM in 1986. Dr. Newns’ research interests, primarily in condensed matter, include surface science, the Kondo effect and heavy Fermion systems, high-temperature... Read More →

Speakers
MP

Marco Piccardo

Ecole Polytechnique & UCSB


Thursday August 14, 2014 08:30 - 10:30
Room 19B

08:30

Optical Properties of Heterostructures II
Click here to view Abstracts

8:30-9:00

Invited: Alejandro González-Tudela
Nanophotonics for Quantum Information & Simulation
Co-authors: Carlos Sánchez-Muñoz, Carlos Tejedor, Fabrice Laussy

Nanophotonics is believed to play a central role in future quantum technologies [1]. Thus, the ability to engineer, create and detect light exploiting its quantum attributes appears as one of the main theoretical and technological challenges in the forthcoming years. Both metals and semiconductor are promising implementations for manipulating light at the nanoscale. The existence of surface plasmon polaritons in metal-dielectric interfaces allows for deep subwavelength confinement, whereas the possibility to engineer photonic bandgaps in semiconductor materials can be used to mold the flow of light confining it to effective one and 0-dimensional systems. In this presentation, I will show how to exploit these systems to mediate interactions between quantum emitters in both one and two-dimensional geometries that lead to entanglement generation [2] and analyze the emergence of strong-coupling in the case of metal-dielectric interfaces [3]. Moreover, I will explain how the study of frequency filtered correlations can be used to engineer and unravel complex quantum dynamics in these systems [4].

[1] JL O'Brien Nat. Phot., 3 687 - 695 (2009).
[2] A. González-Tudela, et al, PRL. 106, 020501 (2011), A. González-Tudela, D. Porras. PRL. 108, 080502 (2013).
[3] A. González-Tudela, et al, PRL. 110, 126801 (2013), A. González-Tudela, et al,. PRB (RC). 89, 041402 (2014).
[4] E. del Valle, et al, PRL 109, 183601 (2012), A. González-Tudela, et al,. NJP. 15, 033036 (2013).

9:00-9:15
Oral: Lukasz Klopotowski
Electronic Coupling in Double CdTe Quantum Dots

9:15-9:30
Oral: Kai Mueller
Ultrafast All-Optical Control of Exciton & Spin Excitations in Individual Dots & Molecules at Zero Magnetic Field
Co-authors: Per-Lennart Ardelt, Alexander Bechthold, Tobias Simmet, Alexander Kleinkauf, Kai Mueller, Gerhard Abstreiter, Jonathan Finley

9:30-9:45
Oral: Sandra C. Kuhn
All-Optical Approach to Extract Information about Quantum Dot Wave Functions Using Intraband Spectroscopy
Co-authors: Andreas Knorr, Marten Richter

9:45-10:00
Oral: Yue Wang
Multi-Photon Pumped Stimulated Emission & Lasing from CdSe/CdS/ZnS Core-Multi-Shell Quantum Dots
Co-authors: Van Duong Ta, Yuan Gao, Hilmi Volkan Demir, Han Dong Sun

10:00-10:15
Oral: Wojciech Pacuski
Single Cobalt Ion in a Quantum Dot
Co-authors: J. Kobak, T. Smoleński, M. Goryca, M. Papaj, A. Bogucki, K. Sawicki, M. Koperski,  J.-G. Rousset, J. Suffczyński, M. Nawrocki, P. Kossacki, A. Golnik

10:15-10:30
Oral: M. Larsson
Detection Efficiency of Optically Excited Electrons in Double Quantum Dots Based on GaAs/AlGaAs Quantum Wells 
Co-authors: K. Morimoto, T. Fujita, G. Allison, S. Teraoka, H. Kiyama, D. G. Austing, A. Ludwig, A. D. Wieck, A. Oiwa, S. Tarucha 

Session Chairs
GN

Gaël Nardin

University of Colorado & NIST
Gael Nardin completed his PhD thesis at EPFL, at the Laboratory of Quantum Optoelectronics. He developed and used time-resolved interferometric imaging techniques to study the dynamics of exciton polaritons in semiconductor microcavities. He is now a post-doctoral research associate at JILA, implementing a novel concept of coherent multi-dimensional spectroscopy to study low-dimensional semiconductor nanostructures.

Speakers
AG

Alejandro González-Tudela

Max Planck Institute of Quantum Optics


Thursday August 14, 2014 08:30 - 10:30
Room 16A

08:30

Quantum Optics, Nanophotonics VI

Click here to view Abstracts

8:30-8:45

Oral: Inah Yeo
Strain-Mediated Coupling Between a Nano-Mechanical Oscillator & a Single Quantum Dot
Co-authors: Pierre-Louis de Assis, Arnaud Gloppe, Eva Dupont-Ferrier, Pierre Verlot, Nitin Malik, Emmanuel Dupuy, Julien Claudon, Jean-Michel Gérard, Alexia Auffèves, Gilles Nogues, Signes Seidelin, Jean-Philippe Poizat, Olivier Arcizet, Maxime Richard

8:45-9:00
Oral: Lloyd Tinkler
Picosecond Spatio-Temporal Solitons in Highly Nonlinear Exciton-Polariton Waveguides
Co-authors: Paul Walker, Dmitry Skryabin, Alexey Yulin, Ben Royall, Dimitrii Krizhanovskii, Maurice Skolnick, Ian Farrer, David Ritchie

9:00-9:15
Oral: Luis Vina
Quantum Ping-Pong & Shunting of Polariton Condensate Wave Trains: Implementation of a Logic & Gate
Co-authors: C. Anton, T. C. H. Liew, J. Cuadra, M. D. Martín, P. S. Eldridge, Z. Hatzopoulos, G. Stavrinidis, P. G. Savvidis

9:15-9:30
Oral: Tobias Gokus
Nanoscale Free-Carrier Profiling of Individual Semiconductor Nanowires by Infrared Near-Field Microscopy
Co-authors: Andreas Huber, Johannes Stiegler, Rainer Hillenbrand

9:30-9:45
Oral: Emma Schmidgall
Three Photon Radiative Cascades from a Single Quantum Dot
Co-authors: Liron Gantz, Dan Cogan, Eli Bordo, David Gershoni

9:45-10:00
Oral: Ido Schwartz
Deterministic Writing & Control of the Dark Exciton State Using Short Single Optical Pulses
Co-authors: Ido Schwartz, Liron Gantz, Dan Cogan, David Gershoni

10:00-10:15
Oral: Glenn Solomon
Temporal Variations in the Nonclassical Light Properties from a Single Quantum-Dot State
Co-authors: T. Thomay, E.B. Flagg, E. Goldschmidt, V. Loo, S.V. Polyakov, A. Migdall

10:15-10:30
Oral: Baoquan Sun
Tuning Biexciton Antibinding-Binding Transition & Fine Structure Splitting
Co-authors: Xuefei Wu, Xiuming Dou, Kun Ding, Ying Yu, Haiqiao Ni, Zhichuan Niu, Yang Ji, Shushen Li, Desheng Jiang, Guang-can Guo, Hai Wei, Lixin He


Session Chairs
SZ

Stefan Zollner

New Mexico State University

Thursday August 14, 2014 08:30 - 10:30
Room 18AB

08:30

Spintronics & Spin Phenomena VI

Click here to view Abstracts

8:30-8:45

Oral: Christian Gradl
Hole g-factor Anisotropy in Coupled GaAs/AlAs Quantum Wells
Co-authors: Michael Kempf, Dieter Schuh, Dominique Bougeard, Christian Schüller, Tobias Korn

8:45-9:00
Oral: B. D. McCombe
Large g-factor Anisotropy in the 2DEG of InAs Quantum Wells
Co-authors: Mehdi Pakmehr, Alexander Khaetskii, Olivio Chiatti, S. F. Fischer, C. Heyn, W. Hansen, M. Cahay, R. Newrock, Nikhil Bhandari

9:00-9:15
Oral: Sergei Verbin
Quadrupole Splitting of Nuclear Spin States in (In,Ga)As/GaAs Quantum Dots Ensemble
Co-authors: Maria Kuznetsova, Karl Flisinski, Ilya Gerlovin, Mikhail Petrov, Ivan Ignatiev, Dmitri Yakovlev, Dirk Reuter, Andreas D. Wieck, Manfred Bayer

9:15-9:30
Oral: Luyi Yang
Two-Color Spin Noise Spectroscopy: Using Spin Fluctuation Correlations to Reveal Homogeneous Linewidths within Quantum Dot Ensembles
Co-authors: Scott Crooker, Philipp Glasenapp, Alex Greilich, Manfred Bayer, Dmitri Yakovlev

9:30-9:45
Oral: Yu Iwasaki
The Spin Analyzing Effect of AB Interferometer on InGaAs 2DEG
Co-authors: Sunwoo Kim, Yoshiaki Hashimoto, Taketomo Nakamura, Shingo Katsumoto, Yasuhiro Iye

9:45-10:00
Oral: Yoji Kunihashi
Direct Imaging of Long-Distance Spin Transport under Persistent Spin Helix Condition in GaAs Quantum Well
Co-authors: Haruki Sanada, Hideki Gotoh, Koji Onomitsu, Makoto Kohda, Junsaku Nitta, Tetsuomi Sogawa

10:00-10:15
Oral: Christoph Schönhuber
Inelastic Light Scattering in the Regime of the Persistent Spin Helix in a GaAs/AlGaAs Quantum Well
Co-authors: Matthias P. Walser, Gian Salis, Christian Reichl, Werner Wegscheider, Tobias Korn, Christian Schüller

10:15-10:30
Oral: Joost van Bree
Effects of Spin-Orbit Currents on the Magnetoluminescence of Quantum Dots
Co-authors: Andrei Silov, Paul Koenraad, Michael E. Flatté 


Session Chairs
SK

Sergey Krishtopenko

Postdoctoral Researcher, Institute for Physics of Microstructures, Russian Academy of Sciences

Thursday August 14, 2014 08:30 - 10:30
Room 18CD

08:30

Topological Insulators II

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8:30-8:45

Oral: Ryszard Buczko
Topological Crystalline Insulators (Pb,Sn)Te & (Pb,Sn)Se: Surface States & Their Spin Polarization
Co-authors: Shiva Safaei, Perla Kacman

8:45-9:00
Oral: Kai Chang
Topological Phase in Commonly-Used Semiconductors
Co-authors: Dong Zhang, Wen-Kai Lou

9:00-9:30
Invited: Joerg Schaefer 
Elemental Topological Insulator alpha-Sn with Tunable Fermi Level 
Co-authors: Arne Barfuss, Markus Scholz, Lenart Dudy, Andrzej Fleszar, Gang Li, Gustav Bihlmayer, Eli Rotenberg, Hugo Dil, Werner Hanke, Ralph Claesssen

We report on the novel topological insulator alpha-Sn, epitaxially grown on InSb with slight compressive strain. The topological surface state (TSS) results from an unusual band order not based on simple spin-orbit coupling, as shown in advanced slab-layer calculations, and emerges from the second valence band. This is probed directly by angle-resolved photoemission with varied photon energies, to single out bulk versus topological contributions. By spin-resolved photoemission we demonstrate that the TSS is highly spin-polarized with counter-clockwise helicity below the Dirac point [1].


The band situation in alpha-Sn closely resembles that of strained HgTe, which in quantum well films yields topological properties such as the quantum spin Hall effect. This renders alpha-Sn a promising candidate for analogous behavior. It is even predicted that a 2D monolayer of Sn in a hexagonal lattice will exhibit 1D topological edge states [2]. Thus, the elemental material alpha-Sn allows ample modifications of the topological situation. As a key step, we demonstrate precise control of the Fermi level in relation to the Dirac point by addition of dopants [1].

[1] A. Barfuss et al., Phys. Rev. Lett. 111, 157205 (2013).
[2] Y. Xu et al., Phys. Rev. Lett. 111, 136804 (2013).

9:30-9:45
Oral: Atindra Nath Pal
Insulating State & Strong Non-Local Response Near the Charge Neutrality Point in an InAs/GaSb Composite Quantum Well
Co-authors: Fabrizio Nichele, Susanne Mueller, Patrick Pietsch, Thomas Ihn, Klaus Ensslin, Christophe Charpentier, Werner Wegscheider

9:45-10:00
Open

10:00-10:15
Oral: Zhuo Wang
Proximity Effect in the Topological Insulator Bismuth Telluride 
Co-authors: Tianyu Ye, Ramesh Mani 

10:15-10:30
Open 

Session Chairs
GP

Gloria Platero

Instituto de Ciencia de Materiales de Madrid
Gloria Platero did her PhD at the Autonomous University of Madrid. She then spent two years at the Max Planck Institute for High Magnetic Fields in Grenoble (France) as a postdoctoral researcher. Afterwards she got a permanent position at the Solid State Institute of the Spanish research council (CSIC). At present, she is a Research Professor at the Material Science Institute of Madrid (CSIC). | | She is the head of the research group in Madrid... Read More →

Speakers
JS

Joerg Schaefer

University of Wuerzburg


Thursday August 14, 2014 08:30 - 10:30
Room 19A

08:30

Transport in Heterostructures IV
Click here to view Abstracts

8:30-9:00

Invited: Vincent Freulon
Decoherence in an Electronic Hong-Ou-Mandel Interferometer
Co-authors: Arthur Marguerite, Bernard Plaçais, Jean-Marc Berroir, Gwendal Fève, Yong Jin, Antonella Cavana

Electron-photon analogies in quantum conductors enable to investigate the coherence of single electronic excitations in electron quantum optic systems. I will present experiments performed on the electronic analog of the Hong-Ou-Mandel interferometer [1]. Two independent sources are used to inject single electrons in the outer edge channel of a two dimensional electron gas in the integer quantum Hall regime. Using an electronic beam splitter, we observe two-particle interferences resulting from quantum exchange statistics.

When both particles are emitted in indistinguishable wavepackets with synchronized arrival time on the splitter, they exit in different outputs. Experimentally, this effect is revealed by a reduction (dip) of the low frequency noise of the output current. Remarquably, dip depth depends on the temporal width of the emitted wavepackets and almost vanishes at long widths. This is a signature of decoherence along the propagation length between source and splitter, involving the coupling between the outer edge channel and the inner ones. We observe that this coupling is modified by changing the filling factor. Our results are compared with a theoretical model of decoherence induced by interchannel interactions [2].

[1] Coherence and Indistinguishability of Single Electrons Emitted by Independent Sources, Bocquillon et al., Science 339,1054 (2013).
[2] Interactions and charge fractionalization in an electronic Hong-Ou-Mandel interferometer, Wahl et al., arXiv:1307.5257 (2014).

9:00-9:15
Oral: Niels Ubbelohde
On-Demand Generation & Separation of Electron Pairs in a Beam Splitter Device
Co-authors: Frank Hohls, Vyacheslavs Kashcheyevs, Timo Wagner, Lukas Fricke, Bernd Kaestner, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

9:15-9:30
Oral: Richard Steinacher
Guiding Branched Electron Flow & Interference Effects in a Cavity of Variable Size
Co-authors: Aleksey Kozikov, Clemens Roessler, Christian Reichl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

9:30-9:45
Oral: Clemens Roessler
Sub-Thermal Electron Transfer in Semiconductor Quantum Structures
Co-authors: Christian Reichl, Werner Wegscheider, Thomas Ihn, Klaus Ensslin

9:45-10:00
Oral: Ramesh Mani
Oscillatory Magnetotransport in the High Mobility GaAs/AlGaAs System under Microwave Irradiation: Role of Microwave Polarization
Co-authors: Aruna Ramanayaka, Werner Wegscheider

10:00-10:15
Oral: Vincent Sacksteder
Spin Dynamics of Cavity Polaritons Diffusing in a Magnetic Field
Co-authors: Anastasia Pervishko, Ivan Shelykh

10:15-10:30
Oral: Yasufumi Araki
Weak Anti-Localization Behavior Beyond Band-Unresolved Regime by Tuning Rashba Spin-Orbit Coupling 
Co-authors: Guru Khalsa, Allan H. MacDonald 

Session Chairs
AC

Andrés Cantarero

University of Valencia

Speakers
VF

Vincent Freulon

Laboratoire Pierre Aigrain


Thursday August 14, 2014 08:30 - 10:30
Room 17A

08:30

Wide Band Gap I

Click here to view Abstracts

8:30-8:45

Oral: Jonathan W. Anderson
Investigation of AlGaInN Microstructure
Co-authors: Francisco Ruiz, O. Laboutin, Y. Cao, Arturo Ponce, J.W. Johnson, Edwin L. Piner

8:45-9:00
Oral: Witold Bardyszewski
Theoretical Study of Excitonic g-factor in GaN/AlGaN & InGaN/GaN Quantum Wells
Co-author: Slawomir Lepkowski

9:00-9:15
Open

9:15-9:30
Oral: Sean King
Photoemission Investigation of the Electronic Structure of ScN Interfaces with 3C-SiC and 2H-GaN (0001)
Co-authors: Robert Davis, Robert Nemanich

9:30-10:00
Invited: Yong-Hoon Cho
Group III-Nitride Nanostructures for Solid State Lighting & Quantum Photonics
Co-authors: N/A 

Low-dimensional semiconductor quantum structures have been actively investigated due to their unique electronic and optical properties. In particular, much attention has been paid to group III-nitride semiconductor nanostructures due to their wide range of bandgap energy and versatile optoelectronic applications. We present various types of group III-nitride nanostructures and their applications for solid state lighting and quantum photonics. First, GaN-based nanopyramid structures were fabricated and electrically driven light emitting diodes were demonstrated [1]. Second, GaN-based nanorod structures were directly grown on Si substrates by metal-organic chemical vapor deposition without using any catalysts [2]. InGaN/GaN quantum well layers deposited on the GaN nanorods showed intriguing optical properties depending on the facets of the structures. Third, tapered GaN nanostructures were fabricated using chemical vapor phase etching method [3]. By growing InGaN/GaN quantum structures on the etched nanostructures, we could obtain ultrafast and high efficiency single photon generation [4]. Single quantum dots formed in these types of nanostructures overcome many limitations in conventional self-assembled quantum dots and can be utilized as high efficiency quantum emitters for quantum information technologies.

[1] Advanced Materials 23, 5364 (2011).
[2] Crystal Growth & Design 12, 3838 (2012).
[3] Crystal Growth & Design 12, 1292 (2012).
[4] Scientific Reports 3, 2150 (2013).

10:00-10:15
Oral: Tsukasa Nakamura
Compensation Mechanism of DX-like Center in Neutron Transmutation Doped-GaN
Co-authors: Kazuma Kamioka, Kazuo Kuriyama, Kazumasa Kushida, Q Xu, Masataka Hasegawa

10:15-10:30
Oral: Alexey S. Pavluchenko
High Power AlInGaN Based LEDs with Reduced Efficiency Droop
Co-authors: Dmitry A. Zakheim, Irina P. Smirnova, Lev K. Markov, Mikhail V. Kukushkin, Dmitry A. Bauman

Session Chairs
JW

Jörg Weber

Professor & Chair of Semiconductor Physics, TU Dresden
Prof. Jörg Weber is Chair of Semiconductor Physics at TU Dresden since December 1999. He is engaged in the study of impurities and defects in various semiconductors. His present area of specialization is the study of hydrogen in various hosts and its importance in device technology. | | Prof. Jörg Weber was dean and vice rector, coeditor of several special issues of "Applied Physics", and chaired and co-chaired several meeting... Read More →

Speakers
YC

Yong-Hoon Cho

Lead, KAIST Center for LED Research, Korea Advanced Institute of Science & Technology
Dr. Yong-Hoon Cho received his Ph.D. degree in solid state physics from Department of Physics, Seoul National University (Korea) in 1997. He worked on growth, fabrication, and various structural, electrical, and oprical characterizations of III-V semconductor thin films and quantum device structures. In April 1997, he was a postdoctoral researcher at Center for Laser and Photonics Research, Oklahoma State University, OK (USA) and worked on the... Read More →


Thursday August 14, 2014 08:30 - 10:30
Room 17B

10:30

Break
Thursday August 14, 2014 10:30 - 11:00
Assorted

11:00

Narrow-Gap Semiconductor II

Click here to view Abstracts

11:00-11:15

Oral: Mario Capizzi
Effects of Hydrogen Irradiation on the Electronic Activity of Nitrogen & Surface Defects in In(AsN) Alloys for the Mid-Infrared
Co-authors: Antonio Polimeni, Manoj Kesaria, Qiandong Zhuang, Anthony Krier, Francesco Mura, Giorgio Pettinari, Anton Velichko, Amalia Patanè 

11:15-11:30
Oral: Javad Shabani
Fabrication & Characterization of Gate-Defined Structures in Epitaxially Grown InAs Heterostructures
Co-authors: Tony McFadden, Borzoyeh Shojaei, Christopher Palmstrom

11:30-12:00
Invited: Michael Möller
Surface Effects on Optical Properties of InAs/InP Core/Shell Nanowires
Co-authors: Douglas S. Oliveira, Alejandro Molina-Sánchez, Mauricio M. de Lima Jr., Andrés Cantarero, Everton Geiger Gadret, Mônica A. Cotta, Fernando Iikawa, Paulo Motisuke 

Semiconductor nanowires (NWs) are very promising for optoelectronic device applications. Due to their large surface to volume ratio, surface conditions strongly affect the emission properties. In particular, for small band gap materials an electron accumulation layer can be formed at the surface, pinning the Fermi level above the conduction band minimum. In order to reduce the surface effects and enhance optical emission, various passivation methods have been investigated. However, a clear understanding of the surface effects is still missing. Here, we studied the influence of the surface on the optical properties of wurtzite (WZ) InAs and core/shell InAs/InP NWs.

We observed remarkable time-evolution of the photoluminescence spectra of all samples in few weeks. Soon after growth, samples present a strong optical emission band around 2.5-2.6 m. After some weeks, a drastic decrease of its intensity is observed while an additional band appears at ~3 m. The former band is attributed to the WZ band gap transition up to the Fermi energy. The latter, to stacking faults that form type-II multi-quantum wells along the NW, or to impurity recombination. This unusual result can be explained based on the Fermi energy variation with time due to the modification of the surface electron density caused by the adsorption of atoms and molecules at the NW surface. Although the nature of the adsorbates is still unknown, a self-consistent calculation of the carrier density and Fermi level position in the NW corroborate the results.

12:00-12:15
Oral: Anton Velichko
Hot Electron Induced Impact Ionization & Large Room Temperature Magnetoresistance in High-Mobility InAs
Co-authors: Amalia Patane, Oleg Makarovskiy, Nobuya Mori, Anthony Krier, Qiandong Zhuang

12:15-12:30
Oral: Vincent R. Whiteside
Hot-Carrier Effects in Narrow-Gap InAs & GaSb Materials: Potential for Next Generation Photovoltaics
Co-authors: Jinfeng Tang, Hamidreza Esmaielpour, Sangeetha Vijeyaragunathan, Tetsuya Mishima, Michael B. Santos, Ian R. Sellers

12:30-12:45
Oral: Giorgio Pettinari
Hydrogen-Induced Band-Gap Opening in InN
Co-authors: Antonio Polimeni, Mario Capizzi, Amalia Patanè, Vadim Lebedev 

12:45-13:00
Open 

Session Chairs
CP

Christopher Palmstrom

Professor, Department of Electrical & Computer Engineering, UC Santa Barbara
Professor Chris Palmstrom, one of the world's leading researchers of electronic materials, joined the ECE faculty at UCSB in the Fall of '07. Born in Norway, Palmstrom received his PhD in Electrical and Electronic Engineering from the University of Leeds (England) in 1979. After five years of research on semiconductor materials and contact techonologies at Cornell, he joined Bellcore in 1985. There, he did groundbreaking research on semiconductor... Read More →

Speakers
MM

Michael Möller

Instituto de Física Gleb Wataghin, UNICAMP


Thursday August 14, 2014 11:00 - 13:00
Room 16B

11:00

Optical Properties of Heterostructures III

Click here to view Abstracts

11:00-11:15

Oral: Michael Scheibner
Optophononics with Coupled Quantum Dots
Co-authors: Mark Kerfoot, Alexander Govorov, Cyprian Czarnocki, Davis Lu, Allan Bracker, Daniel Gammon

11:15-11:30
Oral: Federico Valmorra
Study in Perpendicular Magnetic Field of the Characteristics of InGaAs/AlInGaAs THz Quantum Cascade Lasers
Co-authors: Giacomo Scalari, Keita Ohtani, Mattias Beck, Jerome Faist

11:30-11:45
Oral: Rolf Szedlak
Ring Quantum Cascade Lasers with Grating Phase Shifts
Co-authors: Clemens Schwarzer, Tobias Zederbauer, Hermann Detz, Aaron Maxwell Andrews, Werner Schrenk, Gottfried Strasser

11:45-12:00
Oral: Rolf Szedlak
Focused Emission Beams from Ring Quantum Cascade Lasers
Co-authors: Clemens Schwarzer, Tobias Zederbauer, Hermann Detz, Aaron Maxwell Andrews, Werner Schrenk, Gottfried Strasser

12:00-12:15
Oral: Emmanuel Baudin
Formation & Control of Turing Patterns from Interacting Polaritons in Coupled Semiconductor Microcavities
Co-authors: Vincenzo Ardizzone, Przemyslaw Lewandowski, Y.C. Tse, N.H. Kwong, M.H. Luk, Andreas Lucke, Marco Abbarchi, Jacqueline Bloch, Aristide Lemaitre, Pui-Tang Leung, Philippe Roussignol, Rolf Binder, Jérome Tignon, Stefan Schumacher

12:15-12:30
Oral: Benoit Deveaud
Polaritonic Spinor interactions & Feshbach Resonance
Co-authors: Naotomo Takemure, Stéphane Trébaol, Michiel Wouters, Marcia Portella-Oberli

12:30-12:45
Oral: Vladimir Kochereshko
Magnetic Field Effect on Exciton-Polariton Bose Condensation in Micro-Cavities
Co-authors: Alexey Platanov, Vladimir Kats

12:45-13:00
Oral: Hadis Abbaspour
Stochastic Resonance in Polariton Spin Trigger
Co-authors: Stéphane Trebaol, Francois Morier-Genoud, Marcia Portella Oberli, Benoit Deveaud 


Session Chairs
ME

Michael E. Flatté

Professor, University of Iowa
Michael E. Flatté is an expert in condensed matter and materials theory, specializing in carrier and spin dynamics and their applications to novel semiconductor devices. His research foci include semiconductor spintronics, solid-state quantum computation, carrier dynamics in semiconductor nanostructures, and nanoparticle dynamics in heterogeneous liquids. He has over 135 publications as well as 12 review articles/book chapters, 4... Read More →

Thursday August 14, 2014 11:00 - 13:00
Room 16A

11:00

Quantum Information II

Click here to view Abstracts

11:00-11:15

Oral: Christopher Ford
Non-Adiabatic Excitation & Detection of Coherent Oscillations of Single Electrons
Co-author: Matthew Benesh

11:15-11:30
Oral: Liron Gantz
Coherent Control of Quantum Dot Spin & Novel Approach for Spin-Photon Entanglement
Co-authors: Ido Schwartz, Emma Schmidgall, Dan Cogan, Gad Bahir, David Gershoni

11:30-11:45
Oral: Shoji Baba
Cooper-Pair Splitting in a Nb-Based Parallel Double Quantum Dot Josephson Junction
Co-authors: Juergen Sailer, Russell Deacon, Akira Oiwa, Kenji Shibata, Kazuhiko Hirakawa, Seigo Tarucha

11:45-12:00
Oral: Junko Ishi-Hayase
Photon-Echo-Based Broadband Quantum Interface Using an Inhomogeneous Quantum Dot Ensemble
Co-authors: Kazumasa Suzuki, Shota Ichikawa, Kouichi Akahane

12:00-12:30
Invited: Preden Roulleau
Minimal-Excitation States for Electron Quantum Optics Using Levitons
Co-authors: Preden Roulleau, Matthieu Santin, Thibaut Jullien, Ian Farrer, David Ritchie, Yong Jin, Werner Wegscheider, D. Christian Glattli

The on-demand generation of pure quantum excitations is important for the operation of quantum systems, but it is particularly difficult for a system of fermions. This is because any perturbation affects all states below the Fermi energy, resulting in a complex superposition of particle and hole excitations. However, it was predicted nearly 20 years ago that a Lorentzian time-dependent potential with quantized flux generates a minimal excitation with only one particle and no hole. Here we report that such quasiparticles (called levitons) can be generated on demand in a conductor by applying voltage pulses to a contact [1]. Partitioning the excitations with an electronic beam splitter generates a current noise that we use to measure their number. Minimal-excitation states are observed for Lorentzian pulses, whereas for other pulse shapes there are significant contributions from holes. Further identification of levitons is provided in the energy domain with shot-noise spectroscopy, and in the time domain with electronic Hong-Ou-Mandel noise correlations.

[1] J. Dubois, T. Jullien, F. Portier, P. Roche, A. Cavanna, Y. Jin, W. Wegscheider, P. Roulleau and D. C. Glattli, Minimal-excitation states for electron quantum optics using levitons, Nature 502, 659-663 (2013).

12:30-12:45
Oral: Erika Kawakami
Electrical Control of a Long-Lived Spin Qubit in a Si/SiGe Quantum Dot
Co-authors: Pasquale Scarlino, Dan Ward, Floris Braakman, Mark Friesen, Don Savage, Max Lagally, Susan Coppersmith, Mark Eriksson, Lieven Vandersypen

12:45-13:00
Oral: Otto Rendon
Quantum Decoherence at Zero Temperature for Electron Scattering off Two Mobile-Impurities 
Co-authors: Enesto Medina


Session Chairs
CL

Chungwei Lin

The University of Texas at Austin

Speakers

Thursday August 14, 2014 11:00 - 13:00
Room 19B

11:00

Quantum Optics, Nanophotonics VII

Click here to view Abstracts

11:00-11:15

Oral: Nikola Prtljaga
Electrical Control of On-Chip Single-Photon Routing
Co-authors: Chris Bentham, Igor Itskevich, Rikki Coles, Nikola Prtljaga, Ben Royall, Maurice Skolnick, Luke Wilson

11:15-11:30
Oral: Maaike Bouwes Bavinck
Crystal-Phase Quantum Devices
Co-authors: Simone Assali, Thuy Vu, Klaus Joens, Jia Wang, Marcel Verheijen, Jos Haverkort, Erik Bakkers, Jean-Christophe Harmand, Val Zwiller, Nika Akopian

11:30-11:45
Oral: Ekaterina Chernysheva
Single Photon Emitters Based on (In,Ga)N Quantum Disks Embedded into Ordered Arrays of GaN Nanowires
Co-authors: Snezana Lazic, Zarko Gacevic, Noemi García-Lepetit, Steven Albert, Ana Bengochea-Encabo, Marcus Müller, Frank Bertram, Juergen Christen, Herko van der Meulen, Jose Manuel Calleja, Enrique Calleja

11:45-12:00
Oral: Somsak Panyakeow
GaSb/GaAs, InSb/GaAs & InAs/GaAs Quantum Dots on Ge for Nanophotonic Devices
Co-authors: Suwit Kiravittaya, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathammaphan

12:00-12:15
Oral: Nikola Prtljaga
Integration of Quantum Emitter with On-Chip Beam-Splitter for Quantum Information Processing
Co-authors: Rikki J Coles, John O'Hara, Benjamin Royall, Anthony M Fox, Edmund Clarke, Maurice S Skolnick

12:15-12:30
Oral: Elena del Valle
Engineering Quantum Light Sources through Frequency Filtering
Co-authors: Alejandro González-Tudela, Carlos Sánchez-Muñoz, Carlos Tejedor, Fabrice Laussy

12:30-12:45
Oral: Je-Hyung Kim
A High Efficiency Single Photon Source from Dislocation- & Polarization Field-Eliminated Group III-Nitride Vertical Nanostructures
Co-authors: Young-Ho Ko, Su-Hyun Gong, Suk-Min Ko, Yong-Hoon Cho

12:45-13:00
Oral: Carlos Sanchez Munoz
Emitters of N-photon bundles
Co-authors: Elena del Valle, Alejandro González Tudela, Carlos Tejedor, Fabrice P. Laussy


Session Chairs
HK

Hidekazu Kumano

RIES, Hokkaido University

Thursday August 14, 2014 11:00 - 13:00
Room 18AB

11:00

Spintronics & Spin Phenomena VII
Click here to view Abstracts

11:00-11:30

Invited: Tomasz Smolenski
CdSe Quantum Dot with a Single Manganese Ion - A New System for a Single Spin Manipulation
Co-authors: Jakub Kobak, Mateusz Goryca, Aleksander Bogucki, Maciej Koperski, Jean-Guy Rousset, Jan Suffczynski, Michal Nawrocki, Andrzej Golnik, Piotr Kossacki, Wojciech Pacuski

Semiconductor quantum dot (QD) with a single magnetic ion is a spin-memory providing an easy optical access. However, a severe limitation for its operation was attributed to the recombination channel introduced by magnetic ions for a wide group of systems (e.g. CdSe/ZnSe QDs), in which the exciton energy is higher than the intra-ionic transition energy. As a result, the only QDs with single magnetic dopants explored so far were CdTe/ZnTe and InAs/GaAs QDs embedding Mn ions.

Here we report on the first observation of a CdSe/ZnSe QD with a single Mn ion [1]. Our time-resolved measurements reveal the same exciton lifetime for CdSe dot with and without a single Mn ion. It shows that the exciton emission quenching, even if energetically allowed, is negligible for a QD with a single dopant.

We demonstrate all-optical control of the Mn spin in the novel structure. It is achieved by injecting optically created spin-polarized excitons to a CdSe dot. Moreover, we determine the Mn ion spin relaxation time in a CdSe QD to be over an order of magnitude longer than the respective relaxation time of the Mn spin in a previously studied CdTe QD [1]. This result clearly shows that switching to the QD material with a weaker spin-orbit interaction significantly increases the storage time of information written on the ion spin.

[1] J. Kobak, T. Smolenski, M. Goryca, M. Papaj, K. Gietka, A. Bogucki, M. Koperski, J.-G. Rousset, J. Suffczynski, E. Janik, M. Nawrocki, A. Golnik, P. Kossacki and W. Pacuski, Nature Communications 5, 3191 (2014).

11:30-11:45
Oral: Maciej Koperski
Magnetic Anisotropy of Several Mn2+ Ions in a CdTe/ZnTe Quantum Dot
Co-authors: Mateusz Goryca, Tomasz Smoleński, Piotr Wojnar, Marek Potemski, Piotr Kossacki

11:45-12:00
Oral: Shou-Jyun Zou
Exposure of the Underlying Anti-Ferromagnetism in Paramagnetic Semiconductor CdSe:Mn Nanocrystals
Co-authors: Ming-Fan Wu, Wen-Bin Jian, Shun-Jen Cheng

12:00-12:15
Oral: Takafumi Fujita
Single Photoelectron Spin Detection & Angular Momentum Transfer in a Lateral Double Quantum Dot
Co-authors: Kazuhiro Morimoto, Giles Allison, Marcus Larsson, Haruki Kiyama, Soichiro Teraoka, Arne Ludwig, Andreas Wieck, Akira Oiwa, Seigo Tarucha

12:15-12:30
Oral: Mateusz Goryca
Coherent Oscillations of an Individual Mn Spin
Co-authors: Maciej Koperski, Piotr Wojnar, Tomasz Smolenski, Tomasz Kazimierczuk, Andrzej Golnik, Piotr Kossacki

12:30-12:45
Oral: Mathieu Munsch
Manipulation of the Nuclear Spin Ensemble in a Quantum Dot with Chirped Magnetic Resonance Pulses
Co-authors: Gunter Wüst, Andreas Kuhlmann, Fei XueArne Ludwig, Dirk Reuter, Andreas Wieck, Martino Poggio, Richard Warburton

12:45-13:00
Oral: Felix Hernandez
A New Observation of the Spin Hall Effect: Exploring the Clean Limit
Co-authors: Leonardo Nunes, Gennady Gusev, Askhat Bakarov 

Session Chairs
GK

Giti Khodaparast

Virginia Tech

Speakers
TS

Tomasz Smolenski

University of Warsaw


Thursday August 14, 2014 11:00 - 13:00
Room 18CD

11:00

Topological Insulators III
Click here to view Abstracts

11:00-11:30

Invited: Tomasz Story
Topological Phase Diagram of (PB,Sn)Se
Co-authors: Piotr Dziawa, Bogdan J. Kowalski, Andrzej Szczerbakow, Craig M. Polley, Thiagarajan Balasubramanian, Bastian M. Wojek, Oscar Tjernberg, Krzysztof Dybko, Michal Szot, Wojciech Knoff, Shiva Safaei, Perla Kacman, Ryszard Buczko

(Pb,Sn)Se and (Pb,Sn)Te IV-VI semiconductor alloys are topological crystalline insulators (TCIs) - new materials exhibiting topologically protected Dirac-like helical surface states. In the TCIs the inverted band ordering results from relativistic effects and the topological protection is warranted by crystalline symmetry. TCIs provide ways of controlling topological states by perturbations lowering the symmetry of crystal potential. In (Pb,Sn)Se the band inversion and the topological transition is observed at a specific Sn content, temperature and pressure. We applied angle- and spin-resolved photoemission technique to examine this topological transition for the (001) surface of bulk (Pb,Sn)Se monocrystals. In the inverted band structure regime we found Dirac-like in-gap states close to the X point of the surface Brillouin zone revealing also a vortical spin polarization texture. Based on spectroscopic observations we construct the composition - temperature topological phase diagram of (Pb,Sn)Se and compare it with tight-binding band structure calculations. P. Dziawa et al., Nat. Mat. 11, 1023 (2012); B.M. Wojek et al., Phys. Rev. B 87, 115106 (2013); S. Safaei et al., Phys. Rev. B 88, 045305 (2013).

11:30-11:45
Oral: Jack Alexander-Webber
Two Band Magneto-Transport in Exfoliated Thin Films of Cu0.2Bi2Se3
Co-authors: Jian Huang, Čestmír Drasar, Robin Nicholas, Amalia Coldea

11:45-12:00
Oral: K. Brunner
Molecular Beam Epitaxy & Structural Properties of Bi2Se3-Based Topological Insulator Layers
Co-authors: S. Schreyeck, N. V. Tarakina, U. Bass, S. Grauer, C. Schumacher, T. Borzenko, C. Bruene, H. Buhmann, C. Gould G. Karczewski, J. Geurts, L. W. Molenkamp

12:00-12:15
Oral: Joseph Hagmann
Structural, Magnetic, & Electronic Properties of Self-Assembled Bi2Se3/Bi2MnSe4 Multilayer Heterostructures
Co-authors: Xiang Li, Jonathan Leiner, Sergei Rouvimov, Tatyana Orlova, Suresh Vishwanath, Si-Ning Dong, Xinyu Liu, Curt Richter, David Seiler, Jacek Furdyna, Margaret Dobrowolska

12:15-12:30
Oral: Shayne Cairns
Topological Transport Studies of Ultrathin Sb Films
Co-authors: Chomani Gaspe, Kaushini Wickramasinghe, Tetsuya Mishima, Nolan Teasdale, Joel Keay, Michael Santos, Sheena Murphy

12:30-12:45
Oral: Tobias Herrmann
Room Temperature High Frequency Transport of Dirac Fermions in Epitaxially Grown Sb2Te3 Based Topological Insulators 
Co-authors: Peter Olbrich, Leonid E. Golub, Sergey N. Danilov, Helene Plank, Vasily Bel'kov, Gregor Mussler, Christian Weyrich, Claus M. Schneider, Jörn Kampmeier, Detlev Grützmacher, Lukasz Plucinski, Markus Eschbach, Sergey D. Ganichev 

12:45-13:00
Open 

Session Chairs
CL

Connie Li

Research Scientist, Naval Research Laboratory
Connie H. Li is a staff research scientist in the Magnetoelectronic Materials & Devices section in the Materials Science & Technology Divison at the Naval Research Laboratory (NRL), Washington, DC. She received her B.S. and Ph.D. in 1998 and 2002 from the University of California, Los Angeles (UCLA), working on compound semiconductor surface reactions at an atomic scale in metal organic vapor phase epitaxy (MOVPE), during which she was... Read More →

Speakers
TS

Tomasz Story

Institute of Physics PAS
Prof. Tomasz Story is Head of Semiconductor Physics Department of Institute of Physics of Polish Academy of Sciences in Warsaw (Poland). His research activities cover: carrier-induced ferromagnetism in semiconductors, thermoelectric energy conversion in narrow-gap semiconductors, and topological crystalline insulators.


Thursday August 14, 2014 11:00 - 13:00
Room 19A

11:00

Transport in Heterostructures V

Click here to view Abstracts

11:00-11:15

Oral: Ahmet Avsar
Non-Local Transport Studies in Graphene/WS2 Heterostructures
Co-authors: Jun You Tan, Jayakumar Balakrishnan, Gavin Koon, Jayeeta Lahiri, Alexandra Carvalho, Alexandr Rodin, Thiti Taychatanapat, Eoin O'Farrell, Goki Eda, Antonio Castro Neto, Barbaros Ozyilmaz

11:15-11:30
Oral: Sofia Fahlvik-Svensson
Nonlinear Thermoelectric Properties of Quantum Dots Reveal Melting of Kondo Correlations
Co-authors: Eric Hoffmann, Natthapon Nakpathomkun, Phillip Wu, Hongqi Xu, Henrik Nilsson, David Sánchez, Vyacheslavs Kashcheyevs, Heiner Linke

11:30-11:45
Oral: Martin Holzbauer
Intersubband Plasmon Coupling Enhanced Current Transport
Co-authors: Pavel Klang, Hermann Detz, Aaron Maxwell Andrews, Gottfried Strasser, Pradip Bakshi, Erich Gornik

11:45-12:00
Oral: Ulf Gennser
Electronic Quantum Circuit Back-Action & Tomonaga-Luttinger Physics
Co-authors: S. Jezouin, M. Albert, F.D. Parmentier, A. Anthore, U. Gennser, A. Cavanna, I. Safi, F. Pierre

12:00-12:15
Oral: Yiqing Jin
Probing an Interacting 1D System Beyond the Tomonaga-Luttinger Liquid Regime
Co-authors: Maria Moreno, Christopher Ford, Wooi Kiat Tan, Jonathan Griffiths, Oleksandr Tsyplyatyev, Andy Schofield, Richard Hall, Geb Jones, Ian Farrer, David Ritchie

12:15-12:30
Oral: Ismail Karakurt
Effect of Electron-Electron Interactions on the Magnetoresistivity of a Weakly-Screened, Low-Density, Two-Dimensional Electron Liquid
Co-authors: N/A

12:30-12:45
Oral: Ramesh Mani
Transport Characteristics of the Microwave Driven 2D Negative Magneto-Conductivity State
Co-authors: Annika Kriisa

12:45-13:00
Oral: Mario Capizzi
Magneto-Optical Studies of Wurtzite Phase III-(As,P) Nanowires
Co-authors: Marta De Luca, Antonio Polimeni, H. Aruni Fonseka, Alan J. Meaney, Peter C. M. Christianen, Jan Kees Maan, Faustino Martelli, Silvia Rubini, Suriati Paiman, H. Hoe Tan, Chennupati Jagadish 


Session Chairs
SB

Sanjay Banerjee

The University of Texas at Austin

Thursday August 14, 2014 11:00 - 13:00
Room 17A

11:00

Wide Band Gap II

Click here to view Abstracts

11:00-11:15

Oral: Farzaneh Mahvash
Observation of In-Plane Charge Transport in Few-Layer Hexagonal Boron Nitride
Co-authors: Thomas Szkopek, Mohamed Siaj

11:15-11:30
Oral: Stefan Schulz
Impact of Localized States on the Electronic Properties of AlInN Alloys
Co-authors: Miguel A. Caro, Eoin P. O'Reilly

11:30-11:45
Oral: Niketa Sharma
An Impact of Bias & Structure Dependent LSD Variation on the Performance of GaN HEMTs Based Biosensor
Co-authors: Diksha Joshi, Nidhi Chaturvedi

11:45-12:00
Oral: Hongliang Shi
P-type Transparent Conducting Chalcogenides
Co-authors: Bayrammurad I. Saparov Saparov, Ilia N. Ivanov, Athena S. Sefat, Mao-Hua Du

12:00-12:15
Open

12:15-12:30
Oral: Sankin Vladimir
New Line of Terahertz Emission from High Field Biased Natural Superlattices of SiC
Co-authors: Andrianov Aleksandr, Petrov Aleksey, Zakharin Aleksey, Kaliteevski Michail

12:30-12:45
Open

12:45-13:00
Oral: Nobuko Naka
High-Efficiency Detection of Free Carriers via Auger Ionization in Wide-Gap Semiconductors
Co-authors: Ikuko Akimoto 


Session Chairs
MM

Matthew McCluskey

Westinghouse Professor & Chair of the Department of Physics & Astronomy, Washington State University
Matthew McCluskey is Westinghouse Professor and Chair of the Department of Physics and Astronomy, Washington State University (WSU). He received a Physics B.Sc. from MIT in 1991 and Ph.D. from the University of California, Berkeley in 1997. He was a postdoctoral researcher at the Xerox Palo Alto Research Center (PARC) from 1997 to 1998. Dr. McCluskey joined WSU as an assistant professor in 1998. His research interests include semiconductors... Read More →

Thursday August 14, 2014 11:00 - 13:00
Room 17B

13:00

Lunch On Your Own
There are many restaurants & amenities within just a few blocks of the Austin Convention Center.
View this map to see the nearby options

Thursday August 14, 2014 13:00 - 14:30
Assorted

14:30

Carbon: Nanotubes & Graphene IV
Click here to view Abstracts

14:30-15:00

Invited: Pablo Jarillo-Herrero
Quantum Transport in Graphene/hBN Heterostructures
Co-authors: N/A

In this talk I will present our recent experiments on quantum transport in graphene/hBN heterostructures. I will focus on the measurement of the quantum spin Hall effect in monolayer graphene and the inter-layer quantum spin Hall effect in twisted bilayer graphene, as well as the realization of massive Dirac fermions and Hofstadter butterfly in nearly rotationally-aligned graphene/hBN devices.

15:00-15:15
Oral: Jun Zhu
Spin-Flip Scattering & Its Electric Field Tunability in Dilute Fluorinated Monolayer & Bilayer Graphene
Co-authors: Adam Stabile, Jing Li

15:15-15:30
Oral: Weihang Zhou
Ultra-High Magnetic Field Optical Study on the Relative Ordering between Bright & Dark Excitons in Single-Walled Carbon Nanotubes
Co-authors: Daisuke Nakamura, Huaping Liu, Hiromichi Kataura, Shojiro Takeyama

15:30-15:45
Oral: Piranavan Kumaravadivel
Magneto-Transport in Niobium Nitride (NbN) - Graphene Josephson Weak Links
Co-author: Xu Du

15:45-16:00
Oral: Srijit Goswami
Magnetic Response of Ultra-Clean Edge-Contacted Graphene: From Transverse Focusing to Fractional Quantum Hall Effect
Co-authors: Victor Calado, Kenji Watanabe, Takashi Taniguchi, Lieven Vandersypen

16:00-16:15
Oral: Thomas Szkopek
Observation of the Quantum Hall Effect & Shubnikov-de Haas Oscillations in Hydrogenated Graphene
Co-authors: Keyan Bennaceur, Jonathan Guillemette, Pierre Lévesque, Farzaneh Mahvash, Peter Gaskell, Binxin Wu, Cyril Proust, Mohamed Siaj, Richard Martel, Guillaume Gervais

16:15-16:30
Oral: Xiao Li
Layer Pseudospin Domain Walls in Bilayer Graphene 
Co-authors: Fan Zhangm, Qian Niu, Allan MacDonald 

Session Chairs
AB

Alexey Belyanin

Professor, Department of Physics & Astronomy, Texas A&M University

Speakers
PJ

Pablo Jarillo-Herrero

Associate Professor, Massachusetts Institute of Technology
Professor Jarillo-Herrero's research interests lie in the area of experimental condensed matter physics, in particular quantum electronic transport and optoelectronics in novel low dimensional materials, such as graphene and topological insulators (TIs). | | Pablo Jarillo-Herrero joined MIT as an assistant professor of physics in January 2008. He received his M.Sc. in physics from the University of Valencia, Spain, in 1999. Then he spent two... Read More →


Thursday August 14, 2014 14:30 - 16:30
Room 16B

14:30

Computational Methods III
Click here to view Abstracts

14:30-15:00

Invited: Shengbai Zhang
Probing Carrier Dynamics in Semiconductors by Time-Dependent Density Functional Theory-Molecular Dynamics
Co-authors: Junhyeok Bang, Dong Han, Fei Gao, Vincent Meunier

Recent developments in time-dependent Density functional theory (TDDFT)-molecular dynamics (MD) make it possible to explore excited carrier dynamics and its coupling with lattice dynamics at femtosecond time scale. This talk presents several recent examples to illustrate the significance of such a development [1]. First, we consider energy transfer of photoexcited carriers in hydrogenated graphene. It was found that H desorption from a graphene sparsely populated by the H is difficult due to an inefficient transfer of the excitation energy into the kinetic energy of the H. In contrast, H can be easily desorbed from a fully hydrogenated graphane. This result is at variance with ground-state MD simulation, which predicts H in the sparse case would be much less stable than in fully hydrogenated case [2]. Second, while electron-phonon coupling usually hampers carrier diffusion either by scattering or by the formation of mass-enhanced polarons, it can also enable the diffusion of the excited carriers. Taking the non-polar InAs (110) surface as an example, it was found that phonon mediated electronic coupling could cause initially localized surface excitations, both holes and electrons, to propagate into bulk with a velocity as high as 106 cm/s, despite their nominally infinite effective mass m_⊥. Third, phase transition at a temperature significantly below melting point has been observed by femtosecond laser experiment in phase change Ge-Sb-Te alloys. The phenomenon has been attributed to a lattice weakening effect by carrier excitation [3]. Here, we show that a totally unexpected effect, i.e., carrier multiplication by the relaxation of high-energy carriers, at the early stage of the excitation (~1 ps) is important by setting the trajectory for the athermal phase transition thereafter. This finding may offer a new strategy in designing faster non-volatile phase change memory devices.

[1] S. Meng and E. Kaxiras, J. Chem. Phys. 129, 054110 (2008).
[2] J. Bang, et al., PNAS 110, 908 (2013).
[3] X.-B. Li, et al., Phys. Rev. Lett. 107, 015501 (2011).

15:00-15:15
Oral: Leon Maurer
Thermal Transport in Rough Silicon Nanowires Based on Monte Carlo Simulations
Co-author: Irena Knezevic

15:15-15:30
Oral: Freddy Marcillo
DFT Modelling of Dopamine on Rutile (110) & Anatase (101) Surfaces
Co-authors: Darwin Castillo, Arvids Stashans

15:30-15:45
Open

15:45-16:00
Oral: Dax M. Crum
Novel Numerical Technique for Pauli Exclusion Principle in Monte Carlo Simulation
Co-authors: Amithraj Valsaraj, John K. David, Leonard F. Register, Sanjay K. Banerjee

16:00-16:15
Open

16:15-16:30
Oral: Alex Zunger
Theoretical Discovery & Laboratory Realization of Missing Materials
Co-authors: X. Zhang, K. Poepplemeier, L. Yu, R. Gautier

Session Chairs
HX

Hongjun Xiang

Fudan University
Hongjun Xiang is now a professor of physics at Fudan university. His research lies in the area of computational condensed matter physics, and his current efforts are focused on developing computational methods, predicting and designing structures and properties, and performing model studies. | | He has explored the microscopic origin of multiferroicity and developed a general unified model that explains the ferroelectric polarization induced... Read More →

Speakers
SZ

Shengbai Zhang

Senior Chair, Kodosky Constellation & Professor in Physics, Rensselaer Polytechnic Institute
Dr. Zhang received his Ph. D. in Physics from the University of California at Berkeley in 1989, under the supervision of Professor Marvin L. Cohen. Dr. Zhang then joined Xerox PARC in Palo Alto, California, where he performed postdoctoral research with Dr. Jim Chadi and Dr. John Northrup. In 1991, he moved to the National Renewable Energy Laboratory (NREL) in Golden, Colorado and became group leader for Computational Materials Science in 2005. In... Read More →


Thursday August 14, 2014 14:30 - 16:30
Room 17A

14:30

Optical Properties of Heterostructures IV

Click here to view Abstracts

14:30-14:45

Oral: Jonathan Finley
Lasing from Individual GaAs-AlGaAs Core-Shell Nanowires up to Room Temperature
Co-authors: Benedikt Mayer, Daniel Rudolph, Schnell Joscha, Stefanie Morkötter, Julia Winnerl, Julian Treu, Kai Müller, Gregor Bracher, Gerhard Abstreiter, Gregor Koblmueller

14:45-15:00
Oral: Nilanthy Balakrishnan
Using Hydrogen to Engineer the Electronic Band Structure of Superlattice LEDs Based on Ga(AsN)
Co-authors: Giorgio Pettinari, Amalia Patanè, Oleg Makarovsky, Antonio Polimeni, Mario Capizzi, Mark Hopkinson

15:00-15:15
Oral: Manus Hayne
Heterodimensional Excitons in Submonolayer Structures
Co-authors: Samuel Harrison, Matthew Young, Andre Strittmatter, Andrea Lenz, Holger Eisele, Udo W. Pohl, Dieter Bimberg, Peter D. Hodgson, Robert J. Young

15:15-15:30
Oral: Donghan Lee
Dynamics of Exciton Complexes for a Single Quantum Dot Embedded in a Planar Micro-Cavity
Co-authors: Yudong Jang, S. Maier, S. Höfling, C. Schneider, M. Kamp

15:30-15:45
Oral: Aleksander Bogucki
Magneto-Optical Anisotropy of Dark Exciton Reveals Symmetry-Properties of Hole Wave Function in a Quantum Dot
Co-authors: Tomasz Smolenski, Mateusz Goryca, Jakub Kobak, Wojciech Pacuski, Piotr Kossacki

15:45-16:00
Oral: Masoud Kaveh
Dynamics of Excitons in Bare & Coated Plasmonic InP Nanowires
Co-authors: Hans-Peter Wagner, Qiang Gao, Chennupati Jagadish, Gerd Duscher, Masoud Kaveh

16:00-16:15
Oral: Kobi Cohen
Particle Correlations & Evidence for Dark State Condensation in a Cold Dipolar Exciton Fluid
Co-authors: Ronen Rapaport, Yehiel Shilo, Kobi Cohen, Loren Pfeiffer, Ken West

16:15-16:30
Open 


Session Chairs
BD

Benoît Deveaud

École polytechnique fédérale de Lausanne

Thursday August 14, 2014 14:30 - 16:30
Room 16A

14:30

Quantum Hall Effects III
Click here to view Abstracts

14:30-15:00

Invited: Ulf Gennser
Heat Currents & Their Quantum Limit in Electronic Channels
Co-authors: François Parmentier, Anne Anthore, Antonella Cavanna, Yong Jin, Frédéric Pierre

Heat current measurements have recently attracted a large interest because of their importance for understanding edge state transport and low-level energy excitations in the integer and fractional quantum Hall regimes [1, 2]. At a very fundamental level quantum mechanics predicts of a universal limit to the heat flow across a single channel, independent of the type of particle carrying the heat. However, experimentally, this has only been demonstrated for phonons. We report on the quantitative measurement of this limit for Fermi particles across a single electronic channel tailored in a two-dimensional electron gas, using noise thermometry. The demonstrated agreement between the experiment and theoretical value of the heat flow limit - within 10 % - establishes experimentally this basic building block of quantum thermal transport [3]. The investigation opens a pathway to the nanoscale and coherent control of heat currents.

[1] C. Altimiras, H. Le Sueur, U. Gennser, A. Anthore, A. Cavanna, D. Mailly, and F. Pierre, "Chargeless heat transport in the fractional quantum Hall regime," Phys. Rev. Lett. 109, 026803 (2012).
[2] V. Venkatachalam, et al., "Local thermometry of neutral modes on the quantum Hall edge," Nature Physics 8, 676 (2012); A. Bid, et al., "Observation of neutral modes in the quantum Hall regime," Nature 466, 585 (2010).
[3] S. Jezouin, F. D. Parmentier, A. Anthore, U. Gennser, A. Cavanna, Y. Jin, and F. Pierre, "Quantum Limit of Heat Flow Across a Single Electronic Channel," Science 342, 601 (2013).

15:00-15:15
Oral: Toshimasa Fujisawa
Non-Equilibrium Heating between Counter-Propagating Quantum Hall Edge Channels
Co-authors: Kazuhisa Washio, Ryo Nakazawa, Masayuki Hashisaka, Koji Muraki

15:15-15:30
Oral: Robin J. Nicholas
Role of Disorder in the Temperature-Dependent Magneto-Transport of Graphene near the Dirac Point
Co-authors: Jian Huang, Jack Alexander-Webber, JT Janssen, Alexander Tzalenchuk, Vladimir Antonov, Thomas Yager, Samuel Lara-Avila, Sergey Kubatkin, Rositza Yakimova, Robin Nicholas

15:30-15:45
Oral: Francois Sfigakis
Evidence for an Anisotropic Phase at 5/2 Filling in High Mobility GaAs Holes with Electric Field Sensitive Orientation
Co-authors: Andrew Croxall, Nii Dodoo-Amoo, Inti Sodemann, Allan MacDonald, Ian Farrer, Harvey Beere, David Ritchie

15:45-16:00
Oral: Tristan Meunier
Using a Two-Electron Spin Qubit to Detect Electron Flying Above the Fermi Sea
Co-authors: Romain Thalineau, Christopher Bauerle, Andreas Wieck

16:00-16:15
Oral: Tomoaki Ota
Cross Correlation Measurement of Repartitioned Noise in a Quantum Hall Edge Channel
Co-authors: Masayuki Hashisaka, Koji Muraki, Toshimasa Fujisawa

16:15-16:30
Oral: Nikola Pascher
Imaging the Conductance of Integer & Fractional Quantum Hall Edge States
Co-authors: Clemens Rössler, Thomas Ihn, Klaus Ensslin, Christian Reichl, Werner Wegscheider 

Session Chairs
MO

Milan Orlita

Laboratoire National des Champs Magnétiques Intenses, CNRS
Dr. Milan Orlita received his B.S. and Ph.D. (2006) from the Charles University in Prague, Czech Republic. Currently, he is a postdoctoral research fellow at Laboratoire National des Champs Magnetiques Intenses, CNRS, Grenoble, France. He is also affiliated with the Academy of Sciences of the Czech Republic. He has published extensively on optical measurements of solid-state systems, especially the graphene layers in recent years.

Speakers
UG

Ulf Gennser

Laboratoire de Photonique et de Nanastructures, CNRS
Ulf Gennser recieved his Ph.D. in 1992 from Columbia University (New York), working on resoant tunneling in SiGe heterostructures. He is currently the group leader of « Physics and Technology of Nanostructures » at the Laboratoire de Photonique et de Nanostructures, CNRS, France, and responsible for the molecular beam epitaxy of high mobility electronic systems. His main interest is in mesoscopic physics, and currently, among other... Read More →


Thursday August 14, 2014 14:30 - 16:30
Room 18AB

14:30

Quantum Information III

Click here to view Abstracts

14:30-14:45

Open

14:45-15:00
Oral: Andrew Sachrajda
Three Spin Coherent Interference Behavior
Co-authors: Gabriel Poulin-Lamarre, Joelle Thorgrimson, Sergei Studenikin, Geof Aers, Alicia Kam, Piotr Zawadzki, Zbig Wasilewski

15:00-15:30
Invited: Dohun Kim
Quantum Control & Process Tomography of a Semiconductor Quantum Dot Hybrid Qubit
Co-authors: Zhan Shi, C. B. Simmons, D. R. Ward, Jon Prance, Teck Seng Koh, John King Gamble, Don E. Savage, M. G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson

We experimentally demonstrate quantum operations and tomographic characterization of a quantum dot hybrid qubit: a qubit based on three electrons in two dots formed in a Si/SiGe heterostructure that was proposed theoretically in [1]. Full qubit control on the Bloch sphere is performed using fast changes to only a single gate voltage used as the qubit control parameter [2]. X rotations are performed at the anticrossing between the (1,2) and (2,1) charge-like ground states, while Z rotations are performed through the use of phase accumulation between the ground state and an excited state with the same charge occupation. We measure a rotation rate of ~5 GHz (~11GHz) and a T2* of ~2ns (~10ns) for X (Z) rotations, both of which have visibility greater than 80%. Tomographic characterization of the hybrid qubit is performed through state and process tomography; measurements are performed in the Pauli basis and analyzed using maximum likelihood estimation. We show that the process fidelities for the X(π) and Z(π) gate operations are higher than 84% and 94%, respectively, demonstrating a promising combination of high speed, high fidelity, and efficient control in a semiconductor quantum dot qubit [3].


[1] Z. Shi et al., Phys. Rev. Lett. 108, 140503 (2012).
[2] Teck Seng Koh et al. Phys. Rev. Lett. 109, 250503 (2012).
[3] Dohun Kim et al. arXiv:1401.4416 (2014). 

15:30-15:45
Oral: Dmitrii Gets
N-VSi-Related Center in Non-Irradiated 6H SiC Nanostructure
Co-authors: Edward Danilovskii, Ekaterina Kalabukhova, Leonid Klyachkin, Anna Malyarenko, Daria Savchenko, Bela Shanina

15:45-16:00
Oral: M. Fernando Gonzalez-Zalba
An Exchanged-Coupled Donor Molecule in Silicon
Co-authors: Andre Saraiva, Maria J. Calderon, Dominik Heiss, Belita Koiller, Andrew J. Ferguson

16:00-16:15
Oral: Andreas Betz
Sensitive Gate-Based Charge Read-Out of Few-Electron Si Double Quantum Dots
Co-authors: Sylvain Barraud, Andrew Ferguson, Fernando Gonzalez-Zalba

16:15-16:30
Oral: Evgeny Chekhovich
Nuclear Spin-Echo Coherence in Strained InGaAs Quantum Dots: Quadrupolar Induced Suppression of Nuclear Spin Fluctuations 
Co-authors: Mark Hopkinson, Maurice Skolnick, Alexander Tartakovskii 

Session Chairs
Speakers
DK

Dohun Kim

Post Doctoral Research Associate, University of Wisconsin


Thursday August 14, 2014 14:30 - 16:30
Room 19B

14:30

Spintronics & Spin Phenomena VIII

Click here to view Abstracts

14:30-14:45

Oral: Russell Deacon
Supercurrents in InSb Nanowire Josephson Junction
Co-authors: Kosuke Maeda, Tomoko Fuse, Akira Oiwa, Mingtang Deng, Honqui Xu, Seigo Tarucha, Koji Ishibashi

14:45-15:00
Oral: Taketomo Nakamura
Spin Polarization in Quantum Point Contacts Detected with Quantum Dots
Co-authors: SunWoo Kim, Yoshiaki Hashimoto, Yasuhiro Iye, Shingo Katsumoto

15:00-15:15
Oral: Gerd Kunert
Determination of Spin Coupling Mechanisms in (Ga,Mn)N
Co-authors: Laura Tropf, Stephan Figge, Sylwia Stefanowicz, Maciek Sawicki, Stefan Barthel, Daniel Mourad, Gerd Czycholl, Mariuca Gartner, Mihai Stoica, Tian Li, Rafal Jakiela, Wiktor Stefanowicz, Jörg Grenzer, Hellfried Reuther, Johannes von Borany, Alberta Bonanni, Tomasz Dietl, Krzysztof Rogacki, Detlef Hommel

15:15-15:30
Oral: Hauke Lehmann
Spin-Resolved Conductance Quantization in InAs Nanodevices
Co-authors: Toru Matsuyama, Till Benter, Ulrich Merkt

15:30-15:45
Oral: Abdul Majid
Ferromagnetism in Ce:GaN Diluted Magnetic Semiconductors
Co-authors: Amna Dar, Jianjun Zhu

15:45-16:00
Oral: Igor Rozhansky
Resonant Indirect Exchange Interaction in Semiconductor Heterostructures
Co-authors: Boris Aronzon, Nikita Averkiev, Alexandr Davydov, Igor Krainov, Kliment Kugel, Vikram Tripathi, Erkki Lahderanta

16:00-16:15
Oral: Paulo Ventura Santos
Spin Dynamics of Indirect Excitons in Double Quantum Well Structures
Co-authors: Adriano Violante, Klaus Biermann, Rudolph Hey

16:15-16:30
Oral: Dieter Vogel
Anomalous Hall Effect in Mn Doped InAs Quantum Wells in the Insulating & Metallic State
Co-authors: Ursula Wurstbauer, Josef Loher, Dieter Schuh, Dominique Bougeard, Dieter Weiss 


Session Chairs
BM

Bruce McCombe

SUNY at Buffalo

Thursday August 14, 2014 14:30 - 16:30
Room 18CD

14:30

Wide Band Gap III
Click here to view Abstracts

14:30-14:45

Oral: Alex Dolgonos
Optoelectronic Properties of the Tetragonal-Phase n-type Transparent Conductor in the Gallium-Indium-Tin-Oxide System
Co-authos: Kanber Lam, Kenneth Poeppelmeier, Arthur Freeman, Thomas Mason

14:45-15:00
Oral: Laszlo Frazer
Photon/Exciton-Polariton Scattering Cross Section in Cuprous Oxide
Co-authors: Kelvin Chang, Kenneth Poeppelmeier, John Ketterson

15:00-15:30
Invited: Jörg Weber
Hydrogen Induced Defect Reactions in ZnO
Co-authors: N/A

Hydrogen is an amphoteric impurity in most semiconductors which compensates the electrical activity of dopants. In contrast, atomic hydrogen in ZnO is a shallow donor, which is one of the reasons of the inadvertent n-type conductivity of ZnO samples. We will report on the identification of hydrogen induced shallow effective-mass like donors. In agreement with theory, we identify hydrogen at the bond center position along the c-axis and at the center of the oxygen vacancy. Due to the fast diffusion of hydrogen in ZnO several other hydrogen related defects are formed. A dominant, yet elusive defect is the hydrogen molecule H2, a freely rotating molecule on interstitial sites in the lattice. We will discuss the formation of this neutral defect and its interaction with the lattice. New results on the ortho-para H2 conversion rate will be discussed. The behavior of H in ZnO is contrasted with the properties of this impurity in other semiconductors.

15:30-15:45
Oral: Leonard Brillson
Native Point Defect Energies, Densities, & Electrostatic Repulsion Across MgZnO Alloys
Co-authors: James Perkins, Meredith Meyer, Jean Michel Chauveau, Andrés Redondo-Cubero, Adrian Hierro, Wolfgang Windl

15:45-16:00
Open

16:00-16:15

Oral: Kentaro Kaneko
Room Temperature Ferromagnetism in Alpha-(Ga,Fe)2O3 Semiconductor
Co-authors: Shigenori Ueda, Shizuo Fujita

16:15-16:30
Oral: Rüdiger Schmidt-Grund
NIR-VUV Dielectric Function of (In,Ga)2O3 Thin Films 
Co-authors: Hannes Krauß, Tammo Böntgen, Christian Kranert, Holger von Wenckstern, Jörg Lenzner, Marius Grundmann 

Session Chairs
KJ

K. J. Chang

Korea Advanced Institute of Science & Technology

Speakers
JW

Jörg Weber

Professor & Chair of Semiconductor Physics, TU Dresden
Prof. Jörg Weber is Chair of Semiconductor Physics at TU Dresden since December 1999. He is engaged in the study of impurities and defects in various semiconductors. His present area of specialization is the study of hydrogen in various hosts and its importance in device technology. | | Prof. Jörg Weber was dean and vice rector, coeditor of several special issues of "Applied Physics", and chaired and co-chaired several meeting... Read More →


Thursday August 14, 2014 14:30 - 16:30
Room 17B

16:30

Break
Complimentary coffee and tea served outside Rooms E,F, and G. 

Thursday August 14, 2014 16:30 - 17:00
Assorted

17:00

Posters: Carbon: Nanotubes & Graphene
Click here to view Abstracts

[A1] Yohannes Achenefe

Electron Scattering in Graphene by Impurities with Electric & Magnetic Dipoles
Co-authors: Vadim Mal'nev, Teshome Senbeta

[A2] Alison Arantes
Phononic Bandstructure in Carbon Microtube Composites
Co-authors: Virgilio Anjos

[A3] Zaiki Awang
On-Wafer Characterization of Graphene Nano-Ribbon Transmission Lines for Microwave Integrated Circuit Applications
Co-authors: Mohsen Kara, Nur Amira Abdul Rahim, Mohamad Rusop Mahmood

[A4] Leonid Braginsky
Intervalley Scattering in Graphene
Co-author: Matvey Entin

[A5] Rodrigo Capaz
Ab initio Quasiparticle Band Structure of ABA & ABC-Stacked Graphene Trilayers
Co-authors: Marcos Menezes, Steven G. Louie

[A6] Amirhossein Davoody
Quantum-Mechanical Study of Exciton Dynamics in Carbon Nanotube Composites
Co-author: Irena Knezevic

[A7] Takumi Endo
Photon Antibunching at Telecom Wavelength from a Single-Walled Carbon Nanotube
Co-authors: Hideyuki Maki, Junko Ishi-Hayase

[A8] Akira Fujimoto
Low Temperature Anomalies of Resistance in Titanium-Cleaned Single Layer Graphene
Co-authors: Corey Joiner, Yuxuan Jiang, Tania Roy, Zohreh Razavi Hesabi, Daiju Terasawa, Akira Fukuda, Zhigana Jiang, Eric Vogel

[A9] Alberto Hernández-Mínguez
Electrically Excited Surface Acoustic Waves on Gated Graphene on SiC
Co-authors: Myriano H. Oliveira Jr., Fernando Iikawa, Abbes Tahraoui, Joao Marcelo J. Lopes, Paulo V. Santos

[A10] Kazuhiro Hosono
Dielectric Environment Effect on Carrier Mobility of Graphene Double-Layer Structure
Co-authors: Katsunori Wakabayashi

[B1] Hoonil Jeong
Role of Graphene for Acoustic Phonon Escape out of Semiconductor Devices
Co-authors: Soon Young Park, Kyung-Gu Min, Jung Hong Min, Dong-Seon Lee, Young-Dahl Jho

[B2] Young-Dahl Jho
Phase Manipulation of Terahertz Waves Based on Rectified Carrier Drift in Metal-Graphite Junctions
Co-authors: Muhammad Irfan, Soo-Kyung Lee, Kyung-Gu Min, Yong-Tak Lee

[B3] Nikolai Kalugin
Light Emission in Erbium Oxide-Functionalized Graphene 
Co-authors: Alexey Serov, Plamen Atanassov

[B4] Josef Kamann
Ratchet Effects in Graphene with a Lateral Periodic Potential
Co-authors: Jakob Munzert, Leonid Golub, Eougenious Ivchenko, Matthias König, Jonathan Eroms, Martin Mittendorff, Stephan Winnerl, Felix Fromm, Thomas Seyller, Dieter Weiss, Sergey Ganichev

[B5] Viacheslav Kochelap
Rotating Bi-Electron at Mexican-Hat Single-Electron Energy Dispersion
Co-authors: N/A

[B6] Iljo Kwak
Graphene Transfer onto sub 1nm Al2O3/TiOPc/Graphene Gate Stacks
Co-authors: Jun Hong Park, Hema Movva, Erich Kinder, Hao Lu, Deji Akinwande, Sanjay Banerjee, Susan Fullerton, Alan Seabaugh, Andrew Kummel

[B7] Seung Joo Lee
Electroresistance in Vertical Ferromagnetic Graphene Heterojunctions 
Co-authors: Nojoon Myoung, Hee Chul Park, Gukhyung Ihm

[B8] Jacek A. Majewski
Ordering in Boron & Nitrogen Doped Carbon Nanotubes & Graphene Layers 
Co-authors: Agnieszka Jamroz, Michal Lopuszynski

[B9] Hideyuki Maki
Carbon Nanotube Based Ultra-High-Speed Light Emitters
Co-authors: Tatsuya Mori, Yohei Yamauchi, Satoshi Honda

[B10] Song Mei
Monte Carlo Study of Thermal Transport in Graphene Nanoribbons with Real Edges
Co-authors: Leon Maurer, Zlatan Aksamija, Irena Knezevic

[C1] Pilkyung Moon
Electronic Properties of Graphene-hBN Moir´e Superlattices
Co-author: Mikito Koshino

[C2] Xuehao Mou
Inter- & Intra-Layer Current Flow within Exciton Condensate in a Bilayer Graphene System
Co-authors: Leonard F. Register, Sanjay K. Banerjee

[C3] Amir Natan
Graphene Doping with Single Atoms
Co-authors: Elad Segev, Mark Hersam, Tamar Seideman

[C4] Mikhail Nestoklon
Non-Diffusion Theory of Weak Localization in Graphene
Co-author: Nikita Averkiev

[C5] Arun Nissimagoudar
Effect of Phonon Confinement on Lattice Thermal Conductivity of Graphene Nanoribbons
Co-author: Nandkumar Sankeshwar

[C6] Walter Orellana
Tetraphenylporphyrins Physisorbed on Carbon Nanotubes & Graphene: Stability & Optical Properties from ab initio Calculations
Co-author: Julian Correa

[C7] Isil Ozfidan
Biexciton-Exciton Cascades in Graphene Quantum Dots
Co-authors: Marek Korkusinski, Pawel Hawrylak

[C8] Kibog Park
Quality Improvement of Epitaxial Graphene Grown on C-face Hexagonal SiC Surface by Molybdenum Plate Capping during UHV Annealing
Co-authors: Han Byul Jin, Youngeun Jeon, Sungchul Jung, Hyun Suk Kang, Byung Cheol Lee, Jae-Hyeon Ko, Hyung-Joon Shin, Jung-Woo Yoo, Sung Youb Kim, Soon-Yong Kwon, Daejin Eom

[C9] Chung-Yuan Ren
Electronic Structures in Periodically Doped Graphene: Planar-Basis Density Functional Calculations
Co-authors: Yia-Chung Chang, Chen-Shiung Hsue

[C10] Pauline Simonet
Charge Detection in a Hybrid Graphene-GaAs Nanostructure
Co-authors: Clemens Rössler, Tobias Krähenmann, Dominik Bischoff, Thomas Ihn, Klaus Ensslin, Christian Reichl, Werner Wegscheider

[D1] Stanko Tomic
Electronic & Optical Properties of Functionalized Graphene Oxide
Co-authors: Mark Lundie, Zeljko Sljivancanin

[D2] Allan V. Ribeiro
Comparative Study of the Behavior of Generalized Wannier Functions of sp Bands for Different Interatomic Distances in Linear Carbon Chains
Co-authors: Denis R. Nacbar and Alexys Bruno-Alfonso

[D3] Leonardo Villegas-Lelovsky
Intrinsic Spin-Orbit Effect On-Substrate Graphene Corbino Devices
Co-authors: Jorge Luis Huamani Correa, Fanyao Qu

[D4] Tomoya Yokoi
Electrically Driven Ultra-High-Speed Black Body Emitters Based on Graphene
Co-authors: Yusuke Takayama, Tatsuya Mori, Daiju Tsuya, Hideyuki Maki 

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Narrow-Gap Semiconductor
Click here to view Abstracts

[D5] Wei Cheng

Ab initio Calculation Of Electronic Structure of Oxygen Impurity In CdSe
Co-authors: Lei Liu, Peter Y Yu

[D6] Erasmo A. de Andrada e Silva
Effective g-factor Tensor for Carriers in IV-VI Semiconductor Quantum Wells
Co-authors: Emilia Ridolfi, Giuseppe C. La Rocca

[D7] Hassan El Idrissi
Spin Polarization in a Two Dimensional Hole Gas GaAs/AlGaAs
Co-authors: Asmaa Chakhmane, Abdelhamid El kaaouachi

[D8] Abdelhamid El kaaouachi
Variable Range Hopping conduction in Two Dimensional GaAs Holes System
Co-authors: Said Dlimi, Hassan El Idrissi

[D9] Jamal Hemine
Crossover from Efros-Shklovskii to Mott Variable Range Hopping Conduction in Amorphous Thin NixSi1-x Films
Co-authors: Mohammed Errai, Abdelhamid El kaaouachi

[D10] Denis Ishchenko
Investigation of Photoelectrical Properties of PbSnTe Doped with Indium with Tin Content x = 0.3 - 0.33
Co-authors: Aleksey Akimov, Aleksander Klimov, Igor Neizvestny, Nikolay Paschin, Valentina Sherstyakova, Vladimir Shumsky

[E1] Bela Kvirkvelia
Transport Properties in Solid Solutions of InP & InAs Semiconducting Compounds
Co-authors: Nodar Kekelidze, Elza Khutsishvili, Bela Kvirkvelia, Gulnara Urushadze, George Kekelidze

[E2] Sergey Krishtopenko
Efficient Photoluminescence & Possibilities of Lasing in HgCdTe/CdHgTe Epitaxial Films & QW Structures at Wavelengths up to 26 _m
Co-authors: Sergey Morozov, Vladimir Rumyantsev, Vladimir Gavrilenko, Alexandr Antonov, Maxsim Zholudev, Alexsandr Dubinov, Konstantin Kudryavtsev, Kirill Maremyanin, Nikolay Mikhailov, Sergey Dvoretskii

[E3] Sergey Krishtopenko
Band Ordering in Double HgTe Quantum Wells
Co-authors: N/A

[E4] Gaohua Liao
Electronic Structure of [001]- & [111]-Oriented Free-Standing InSb & GaSb Nanowires
Co-authors: Ning Luo, Keqiu Chen, H. Q. Xu

[E5] Abdelhakim Nafidi
Electronic Structure, Effective Mass & Magneto-Transport Properties in HgTe-CdTe Superlattice with Large Quantum Well Thickness
Co-authors: Aomar Idbaha, Driss Barkissy, Abderrazak Boutramine, Hassan Chaib, Hassan Sahsah, Bernabé Marí Soucase

[E6] Hiroyasu Nakata
Infrared Plasma Reflection by In Layer Grown on Si
Co-authors: Mai Adachi, Tokuo Yodo

[E7] John Petersen
On the Mechanical Properties of Lead Chalcogenides from ab initio Calculations
Co-authors: Luisa Scolfaro, Thomas Myers

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Optical Properties of Heterostructures (Akahane-Liu)
Click here to view Abstracts

[E8] Kouichi Akahane

Polarization Control for InAs Quantum Dot Edge Emission in Highly Stacked Structure with Strain Compensation Technique
Co-authors: Naokatsu Yamamoto, Toshimasa Umezawa, Tetsuya Kawanishi

[E9] Lev Avakyants
Estimation of the Lifetime of Nonequilibrium Carriers in Delta-Doped GaAs by Photoreflectance
Co-authors: Pavel Bokov, Anatoly Chervyakov, Galib Galiev, Evgeny Klimov, Igor Lyalin, Ivan Vasilevskii

[E10] Lev Avakyants
Electroreflectance from Multiple InGaN/GaN Quantum Wells: Interference Effects
Co-authors: Artem Aslanyan, Pavel Bokov, Anatoly Chervyakov, Kirill Polozhentsev

[F1] M.A.G Balanta
Electronic Coupling Between InGaAs Quantum Wells & Mn-delta Doping Layers
Co-authors: M.J.S.P Brasil, F. Iikawa, Udson. C. Mendes, J.A. Brum, Yu.A. Danilov, M. V. Dorokhin, O.V. Vikhrova, B.N. Zvonkov

[F2] Steffen Bieker
Excitonic Butterflies in Ultrapure Bulk GaAs
Co-authors: Tobias Henn, Tobias Kiessling, Wolfgang Ossau, Laurens W. Molenkamp

[F3] Ekaterina Chernysheva
Electric Field Dependent Fine-Structure Splitting in Single InAs/AlAs Quantum Dots
Co-authors: Snezana Lazic, Herko van der Meulen, Jose Manuel Calleja, Klaus Pierz

[F4] Eronides da Silva Jr.

Study of Optical & Electronic Properties in DMS Superlattices Based on Group III - V 
Co-authors: Jandrews Gomes, Sara Rodrigues, Guilherme Sipahi

[F5] Martin O. Eriksson

The Charged Exciton in an InGaN Pyramidal Quantum Dot Observed by Micro-Photoluminescence Spectroscopy
Co-authors: Chih-Wei Hsu, Anders Lundskog, Karl Fredrik Karlsson, Peder Bergman, Erik Janzén, Per Olof Holtz

[F6] Markus Fehrenbacher
Near-Field Investigation of a Plasmonic GaAs Superlens
Co-authors: Stephan Winnerl, Harald Schneider, Jonathan Döring, Susanne Kehr, Lukas M. Eng, Yongheng Huo, Oliver G. Schmidt, Kan Yao, Yongmin Liu, Manfred Helm

[F7] Fabio Aparecido Ferri
Study of Mn Incorporation in InAs Quantum Dots Fabricated by Low-Temperature Molecular Beam Epitaxy
Co-authors: Mourad Benamara, Gregoty Salamo, Marcio Teodoro, Euclydes Marega Junior

[F8] Jateen Gandhi
Lattice Strain Modulation of Optical Behavior in Epitaxial Quantum-dot p-i-n Structures
Co-authors: Anton Malko, Choong-Un Kim, Wiley Kirk

[F9] Manus Hayne
Optically-Induced Charging & Discharging of GaSb/GaAs Quantum Dots & Rings
Co-authors: Peter D. Hodgson, Robert J. Young, Mazliana Ahmad Kamarudin, Peter J. Carrington, Anthony Krier, Qiandong Zhuang

[G1] Isaac Hernández-Calderón
Study of the Coupling/Uncoupling of Ultra-Thin CdSe Double Quantum Wells
Co-authors: Jose-Antonio Lorenzo-Andrade, Frantisek Sutara

[G2] Isaac Hernández-Calderón 
Thermal Treatment Effects on the Excitonic Emission of Layer-by-Layer Grown ZnCdSe/ZnSe Quantum Wells
Co-authors: Miguel U. Salazar-Tovar, Frantisek Sutara

[F10] Arturo Hernández-Hernández
Synthesis of Visible Light Emitting Self Assembled SiGe Alloy Nanoparticles Formed by Co-Sputtering of Si, Ge
Co-authors: Luis A. Hernández-Hernández, Francisco De Moure-Flores, Jose G. Quiñones-Galván, Miguel Meléndez-Lira

[G3] Kurt Hingerl
Bulk Dipole Contribution to Second Harmonic Generation in Diamond Lattices Due to Spatial Dispersion Oxide 
Co-authors: Hendradi Hardhienata, David Stifter

[G4] Per Olof Holtz
Polarization Controlled Light Emission from Nitride Pyramidal Quantum Dots
Co-authors: ChihWei Hsu, Anders Lundskog, Martin Eriksson, Fredrik Karlsson, Urban Forsberg, Erik Janzen

[G5] Yasutaka Imanaka
Shubnikov-de Haas Type Oscillation in Cyclotron Resonance of CdMnTe Two-Dimensional Electron Systems
Co-authors: Tomasz Wojtowicz, Grzegorz Karczewski

[G6] Andrew Jacobs
Coherent Phonon Control via Fano-like Resonance in a Quantum Dot Molecule
Co-authors: Cameron Jennings, Mark Kerfoot, Alexander Govorov, Michael Scheibner

[G7] Gwénolé Jacopin
The Mott-Transition in Wide Bandgap Semiconductor Quantum Wells: A Temperature Dependent Study 
Co-authors: Georg Rossbach, Jacques Levrat, Mehran Shahmohammadi, Jean-François Carlin, Jean-Daniel GanièreRaphaël ButtéBenoit DeveaudNicolas Grandjean

[G8] Vishal Jain
Large Area Photodetectors at 1.3/1.55 _m Based on InP/InAsP NWs
Co-authors: Magnus Heurlin, Ali Nowzari, David Lindgren, Magnus Borgstöm, Federico Capasso, Lars Samuelson, Håkan Pettersson

[G9] Fredrik Karlsson
Unpaired Holes Reveal Quantum Dot Asymmetry
Co-authors: Daniel Dufåker, Lorenzo Mereni, Valeria Dimastrodonato, Gediminas Yuska, Emanuele Pelucchi, Per-Olof Holtz

[G10] Fredrik Karlsson
III-Nitride Quantum Dots for Photon Emission with Controlled Polarization Switching
Co-authors: Supaluck Amloy, Per Olof Holtz

[H1] Tomasz Kazimierczuk
Rydberg Excitons in Cuprous Oxide
Co-authors: Dietmar Fröhlich, Stefan Scheel, Heinrich Stolz, Manfred Bayer

[H2] Luis Felipe Lastras-Martinez
Macro & Micro Reflectance Difference Spectroscopy of Heterostructures: A Powerful Tool for the Characterization of Wurtzite Thin Films
Co-authors: Nicolas Antonio Ulloa-Castillo, Rafael Herrera-Jasso, Raul Eduardo Balderas-Navarro, Alfonso Lastras-Martinez

[H3] Gabriel Linares-Garcia
Study of Optical Properties of InAs/GaAs Quantum Rings in the Framework of kp Theory
Co-authors: Samar Alsolamy, Morgan Ware, Yuruy I. Mazur, Zhiming Wang, Jihoon Lee, Greg Salomo, Eric Stinaff, Lilia Meza-Montes

[H4] Fang Liu
Time Resolved Photocurrent Spectra of GaxIn1-xP-GaAs Double-Junction Solar Cells 
Co-authors: Zhuo Deng, Jiqiang Ning, S.J. Xu

[H5] Xiangming Liu
Multi-Exciton Binding in Droplet Epitaxially Grown InAs/ InP (111)A Quantum Dots at Telecommunication Wavelengths
Co-authors: Neul Ha, Takashi Kuroda, Takaaki Mano, Yoshiki Sakuma, Kazuaki Sakoda

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Optical Properties of Heterostructures (Penello-Yamamoto)
Click here to view Abstracts

[H6] Germano Maioli Penello 

Observation of an Electronic Excited State Localized in the Continuum 
Co-authors: Marcos Henrique Degani, Marcelo Zoega Maialle, Rudy Massami Sakamoto Kawabata, Daniel Neves Micha, Maurício Pamplona Pires, Patrícia Lustoza de Souza

[H7] Yasuaki Masumoto 
Fast Charge Transfer from Quantum Dots for Solar Cells
Co-authors: Jianhui Sun, Hikaru Umino, Eri Suzumura

[H8] Fanqi Meng
Ultrafast Photo-Response of an Optically Excited Plasma in Silicon Investigated with a Mid-Infrared Continuum Probe  
Co-authors: Mark D. Thomson, Hartmut G. Roskos

[H9] Ramūnas Nedzinskas 
Temperature-Dependent Optical Properties of InGaAs/GaAs Quantum Rods
Co-authors: Bronislovas Cechavivcius, Andrius Rimkus, Julius Kavaliauskas, Vytautas Karpus, Gintaras Valuvsis, Lianhe Li, Edmund Linfield

[H10] Mikhail Nestoklon 
Tight-Binding Study of Optical Transitions in Si/Ge Core-Shell Nanocrystals
Co-authors: Alexander Poddubny

[i1] Han Gyeol Park 
Construction of Rotating-Compensator Ellipsometer Using MgF2 Monoplate Retarder to Investigate Bandgap Energies of GaAs & GaFeO3 
Co-authors: Junho Choi, Tae Jung Kim, Yu Ri Kang, Jae Chan Park, Young Dong Kim, Chang Bae Park, Kwangwoo Shin, Kee Hoon Kim

[i2] Yuri Pusep 
Photoluminescence of Radial Heterostructured GaAs/AlGaAs/GaAs Nanowires 
Co-authors: Fransisco Guimarães, Raphael Caface, Haroldo Arakaki, Carlos De Souza

[i3] Evaldo Ribeiro 
Light Emission Mechanisms in Silicon Nanoparticle Colloids Produced by Laser Ablation
Co-authors: Cesar Chiesorin Baganha, Arandi Ginani Bezerra Jr., Ismael Leandro Graff, Gabriela Luchtemberg Plautz, Vinicius S. Oliveira, Wido Herwig Schreiner, Ney Mattoso, Carlos Kazuo Inoki, Kleber Daum Machado

[i4] Cédric Robert 
Carrier Capture & Relaxation in GaAsPN/GaP Quantum Wells 

[i5] Cédric Robert 
Strain-Induced Fundamental Optical Transition in (In,Ga)As/GaP Quantum Dots 
Co-authors: K. Pereira da Silva, A.R. Goñi, M.O. Nestoklon, L. Pedesseau, C. Cornet, M.I. Alonso, P. Turban, J.-M. Jancu, J. Even, O. Durand

[i6] Maciej Ściesiek 
ZnSe as a Barrier Material for an Enhanced Hole Binding Potential in CdTe Quantum Dots
Co-authors: Jan Suffczyński, Justyna Piwowar, Tomasz Smoleński, Wojciech Pacuski, Piotr Kossacki, Andrzej Golnik

[i7] Teng Shi 
Exciton Localization in GaAs/AlGaAs Radial Heterostructure Quantum Well Tubes
Co-authors: Bekele Badada, Yuda Wang, Howard Jackson, Leigh Smith, Jan Yarrison-Rice, Bryan Wong, Nian Jiang, Jennifer Wong-Leung, Qiang Gao, H. Hoe Tan, Chennupati Jagadish

[i8] Leigh Smith 
Optical & Electronic Signatures of Very High Hole Concentrations in Degenerately Doped GaAs Rotational Twin Nanowire Superlattices 
Co-authors: Teng Shi, Bekele Badada, Yuda Wang, Howard Jackson, Tim Burgess, Qiang Gao, H. Hoe Tan, Chennupati Jagadish

[i9] Mikhail Sobolev 
Optical Polarization & Quantum Coupling in 10-Layer Systems of InAs/GaAs Vertically Correlated Quantum Dots 
Co-authors: Idris Gadzhiyev, Mikhail Buyalo, Vladimir Nevedomskiy, Yurii Zadiranov, Raisa Zolotareva, Alexey Vasilyev, Victor Ustinov

[i10] Andrey Telegin 
Magnetorefractive Effect in the Manganites Superlattices  
Co-authors: Yurii Sukhorukov, Elena Ganshina, Evgeneii Stepantsov

[J1] Julian Treu 
Enhanced Luminescence Properties of Passivated InAs Core-Shell Nanowires 
Co-authors: Thomas Stettner, Michael Bormann, Hannes Schmeiduch, Markus Döblinger, Stefanie Morkötter, Sonja Matich, Kai Saller, Benedikt Mayer, Max Bichler, Markus-Christian Amann, Gerhard Abstreiter, Jonathan Finley, Gregor Koblmueller

[J2] Hans-Peter Wagner 
Population Dynamics of Electron-Hole Pairs in Polytype Wurzite-Zincblende InP Nanowires 
Co-authors: Masoud Kaveh, Wolfgang Langbein, Qiang Gao, Chennupati Jagadish

[J3] Yuda Wang 
Transient Rayleigh Scattering Spectroscopy Measurement of Carrier Dynamics in Zincblende & Wurtzite Indium Phosphide Nanowires 
Co-authors: Mohammad Montazeri, Howard Jackson, Leigh Smith, Jan Yarrison-Rice, Tim Burgess, Suriati Paiman, H. Hoe Tan, Qiang Gao, Chennupati Jagadish

[J4] Nathaniel Woodward 
Terahertz Probe of Lateral Electric Fields in c-plane III-V Nitrides 
Co-authors: Ryan Enck, Chad S. Gallinat, Erin C. Young, James S. Speck, Hongen Shen, Michael Wraback

[J5] Naokatsu Yamamoto 
Electro-Absorption Effect of Highly Stacked InAs Quantum Dot in 1550-nm Telecom Band
Co-authors: Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi 

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Quantum Information
Click here to view Abstracts

[J6] Anasua Chatterjee

Donor Qubit Devices in Silicon
Co-authors: Matias Urdampilleta, Cheuk Lo, Fernando Gonzalez-Zalba, Andrew Ferguson, John Morton

[J7] Shota Ichikawa
Three-Pulse Stimulated Photon Echo in InAs Quantum Dots toward Broadband Quantum Interface
Co-authors: Kazumasa Suzuki, Kouichi Akahane, Junko Ishi-Hayase

[J8] Benoit Roche
The Charge Noise of an Electrical Switch in the Quantum Limit
Co-authors: Preden Roulleau, Matthieu Santin, Thibaut Jullien, Ian Farrer, David Ritchie, D. Christian Glattli

[J9] Philipp Ross
Surface Code Quantum Computation Using Donor Spins in Silicon
Co-authors: Joe O'Gorman, Naomi H. Nickerson, Simon C. Benjamin, John J. L. Morton

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Quantum Optics, Nanophotonics
Click here to view Abstracts

[J10] Maria Bernard-Schwarz

A Real-Time Control System Designed for Quantum Optics Experiments
Co-authors: Lothar Ratschbacher, Tatjana Wilk, Martin Gröschl

[K1] Angela Camacho
Optical Behavior of Very Small Metal Nanoparticles
Co-author: Mario Zapata

[K2] Jorge Cuadra
Polarization Properties of 2D & 1D Polariton Condensates Created in the Optical Parametric Oscillation Regime
Co-authors: Dipankar Sarkar, Luis Vina, Anton Nalitov, Dmitry Solnyshkov, Guillaume Malpuech, Jørn M. Hvam

[K3] Elena del Valle
Spontaneous, Collective Coherence in Driven, Dissipative Cavity Arrays
Co-authors: Joaquin Ruiz-Rivas, Christopher Gies, Paul Gartner, Michael Hartmann

[K4] S. Diefenbach
Polarization Dependent, Surface Plasmon Induced Photoconductance in Gold Nanorod Arrays
Co-authors: A. Martin, D. Iacopino, A. W. Holleitner

[K5] Shuichi Emura
On Oscillatory Structures Hanging on Main Photoluminescence from Fine GaN Nanorods
Co-author: Mohamed Almokuhtar

[K6] Lukas Greuter
Strong Coupling of a Single Self-Assembled Quantum Dot in a Tunable Microcavity
Co-authors: Sebastian Starosielec, Daniel Najer, Andreas Kuhlmann, Sascha Valentin, Arne Ludwig, Andreas Wieck, Richard Warburton

[K7] Julia Kabuss
Theory of Deterministic & Robust Entanglement between Two NV Centers
Co-authors: Janik Wolters, Oliver Benson, Andreas Knorr

[K8] Konstantin Litvinenko
Ultrafast Electrical Detection of Orbital Donor States in Silicon
Co-authors: N/A

[K9] Tom Michalsky
Lateral Confinement of 1D & 0D Cavities by Conformal Distributed Bragg Reflector Coating
Co-authors: Helena Franke, Rüdiger Schmidt-Grund, Tomasz Jakubczyk, Tomasz Smoleński, Wojciech Pacuski, Piotr Kossacki, Carsten Kruse, Detlef Hommel, Martin Heilmann, Christian Tessarek, Silke Christiansen, Marius Grundmann

[K10] Felipe Murphy-Armando
Time Evolution of Charge Carriers & Phonons after Photo-Excitation by an Ultra-Short Light Pulse in Ge
Co-authors: Stephen Fahy, Mariano Trigo, David Reis, Ivana Savic, Eamonn Murray

[L1] Ali Nowzari 
InP Core-Shell Nanowire-Based Solar Cells
Co-authors: Magnus Heurlin, Kristian Storm, Vishal Jain, Magnus Borgström, Håkan Pettersson, Lars Samuelson 

[L2] Blanca Silva Fernández 
Photon Antibunching from a Condensate of Exciton-Polaritons 
Co-authors: Carlos Sánchez Muñoz, Alejandro González Tudela, Dario Ballarini, Milena De Giorgi, Elena del Valle, Daniele Sanvitto, Fabrice Laussy

[L3] Juan Pablo Vasco Cano
Study of the Coupling between L3 Cavities in Air-Bridge Photonic Crystals
Co-authors: Paulo Sergio Soares Guimarães, Herbert Vinck Posada

[L4] Juan Pablo Vasco Cano
The Light Statistical Properties of Interacting Quantum Dots in Microcavities
Co-authors: Milton Linares, Luis Elvis Cano, Boris Anghelo Rodriguez, Herbert Vinck Posada, Paulo Sergio Soares Guimarães

[L5] Olesea Volciuc
Photonic Crystal Structures Based on GaN Ultrathin Membranes Fabricated with Maskless Lithography
Co-authors: Vladimir Sergentu, Tudor Braniste, Ion Tiginyanu, Marion A. Stevens-Kalceff, Timo Aschenbrenner, Detlef Hommel, Jürgen Gutowski

[L6] Yohei Watanabe
Polaronic Quasiparticle Picture for Coherent Phonon Dynamics in Semiconductors
Co-authors: Yohei Watanabe, Yuya Nemoto, Ken-ichi Hino, Nobuya Maeshima

[L7] Alexis Zaganidis
A chip integrated source of directionally entangled photons
Co-authors: Raphael Faerber, Marc-André Dupertuis 

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Topological Insulators
Click here to view Abstracts

[L8] Ryota Akiyama

Electrical Transport Measurements in Topological Crystalline Insulator SnTe Thin Films
Co-authors: Kazuki Fujisawa, Shinji Kuroda

[L9] Sercan Babakiray 
Magnetotransport Measurements on Mn Doped Bi2Se3 Thin Films
Co-authors: Trent Johnson, Pavel Borisov, David Lederman

[L10] Rik Dey
Evidence of Strong Spin-Orbit Coupling & Effects of Zeeman Spin Splitting in Angle-Dependent Anisotropic Magnetoresistance of Topological Insulator Bi2Te3 Thin Film
Co-authors: Tanmoy Pramanik, Anupam Roy, Amritesh Rai, Samaresh Guchhait, Sushant Sonde, Hema C P Movva, Luigi Colombo, Leonard Franklin Register, Sanjay Kumar Banerjee

[M1] Junxi Duan
Study of Topological Surface States in Bi2Se3 by Circular Photogalvanic Effect Gated by Ionic Liquid
Co-authors: Ning Tang, Xin He, Shan Zhang, Yonghai Chen, Fujun Xu, Weikun Ge, Bo Shen

[M2] Xiaopeng Duan
Spike Current on Nano-Magnet Capped Topological Insulator Surface for Neuromorphic Computing
Co-authors: Yuriy G Semenov, Ki Wook Kim

[M3] Saskia Fischer
Transport Investigations of Topological Insulator Bi2Se3 Microflakes
Co-authors: Srujana Dusari, Jaime Sanchez-Barriga, S Valencia, Oliver Rader, Anna Mogilatenko, Lada Yashina

[M4] Grzegorz Grabecki 
Conductance Fluctuations in HgTe/(Hg,Cd)Te Spin Hall Bars & Nanoconstrictions 
Co-authors: Łukasz Cywinski, Jerzy Wrobel, Magdalena Czapkiewicz, Magdalena Majewicz, Sylwia Gieraltowska, Elzbieta Guziewicz, Maksim Zholudev, Vladimir Gavrilenko, N. N. Mikhailov, Sergey Dvoretski, Frederic Teppe, Wojciech Knap, Tomasz Dietl

[M5] Detlev Grützmacher
Structural & Electronic Properties of n-Bi2Te3 / p-Sb2Te3 Heterostructures
Co-authors: Gregor Mussler, Jörn Kampmeier, Christian Weyrich, Martin Gerster, Lucas Plucinski, Martina Luysberg

[M6] Yumei Jing
Quantum Phase Coherence Effects in Topological Insulator Bi2Se3 Thin Films
Co-authors: Kai Zhang, Shaoyun Huang, Hailin Peng, H. Q. Xu

[M7] Anton Konakov
Terahertz Field-Induced Electron & Spin Dynamics in Quantum Dots Formed in 2D Topological Insulators
Co-authors: Denis Khomitzky, Alexander Chubanov

[M8] Horacio W. Leite Alves
Structural & Electronic Properties of SnTe & PbTe (100) Surfaces
Co-author: Eronides F. da Silva Jr.

[M9] Hong-Chao Liu
Tunable Electron-Electron Interaction & Weak Antilocalization Effect in Nanostructured Bi2Te3 Thin Film
Co-authors: Hai-Zhou Lu, Hong-Tao He, Bai-Kui Li, Shi-Guang Liu, Qing Lin He, Gan Wang, Iam-Keong Sou, Shun-Qing Shen, Jiannong Wang

[M10] Junwei Liu
Spin-Filtered Edge States with an Electrically Tunable Gap in a Two-Dimensional Topological Crystalline Insulator
Co-authors: Timothy Hsieh, Peng Wei, Wenhui Duan, Jagadeesh Moodera, Liang Fu

[N1] Wei-Zhe Liu
Weak Antilocalisation in Topological Insulators with Strong Spin-Orbit Scattering
Co-authors: Pierre Adroguer, Xintao Bi, Ewelina Hankiewicz, Dimitrie Culcer

[N2] Hai-Zhou Lu
Low-Temperature Conductivity & Magnetoconductivity of Two-Dimensional Dirac Fermions in Topological Insulators
Co-author: Shun-Qing Shen

[N3] Andrés C. Moscoso Rojas
Anderson Transition in Two-Dimensional Systems
Co-author: R. R. Rey-González

[N4] Susanne Mueller
Transport Measurements in Mesoscopic Devices of the 2D Topological Insulator Candidate InAs/GaSb
Co-authors: Atindra Nath Pal, Fabrizio Nichele, Thomas Ihn, Klaus Ensslin, Christophe Charpentier, Werner Wegscheider

[N5] Yuya Ominato
Quantum Transport in Weyl Semimetals
Co-author: Mikito Koshino

[N6] Mehdi Pakmehr
Probing the Dirac-Like Dispersion at High Electron Energies in a HgTe QW near the Topological Transition by Magneto-Transport & THz Magneto-Photoresponse & -transmission
Co-authors: C. Brune, Hartmut Buhmann, Lauren Molenkamp, Bruce McCombe

[N7] A. Rahim
Nonlinear Transport near Charge Neutrality Point in Two-Dimensional Topological Insulators
Co-authors: A D Levin, G M Gusev, Z D Kvon, E B Olshanetsky, N N Mikhailov, S A Dvoretsky

[N8] Vincent Sacksteder
Bulk Effects on Topological Conduction in 3-D Topological Insulators
Co-author: Quansheng Wu

[N9] Jing Wang
Scattering of Surface/Edge States on typical 3D/2D Topological Insulators
Co-authors: Qile Wu, Langtao Huang, Jing Wang

Thursday August 14, 2014 17:00 - 19:00
Room EFG

17:00

Posters: Wide Band Gap
Click here to view Abstracts

[N10] Khaled Alfaramawi

Dislocation Scattering Limited Electron Mobility in Wurtzite Gallium Nitride
Co-authors: N/A

[O1] J. Dashdorj
EPR Detected Mg-Related Acceptor Levels in Bulk Mg-Doped GaN
Co-authors: M.E. Zvanut, M. Bockowski

[O2] Mao-Hua Du
Chemical Trends of Mn^4+ Emission in Solides
Co-authors: Bayrammurad I. Saparov Saparov, Ilia N. Ivanov, Athena S. Sefat

[O3] Shuichi Emura
Quantum Confinement of Phonon in InGaN/GaN Multi-Quantum Disks
Co-authors: Daivasigamani Krishnamurthy, Kazunori Sato

[O4] Satyaki Ganguly
Performance Enhancement in PAMBE Grown AlN/GaN(14)N(15) HEMTs by Isotope Engineering
Co-authors: Guowang Li, Bo Song, Rusen Yan, Jacob Khurgin, Huili (Grace) Xing, Debdeep Jena

[O5] Dr. Alka Garg
Structural & Optical Properties of Thin Films of Bismuth Tri-iodide for Radiation Detectors
Co-authors: Dr vinay Gupta, Dr Monika Tomar

[O6] Gregory Garrett
Temperature Effects in the Kinetics of Photoexcited Carriers in Wide Band Gap Semiconductors
Co-authors: Sergey Rudin, Michael Wraback, Sara Shishehchi, Enrico Bellotti

[O7] Luis A. Hernández-Hernández
Temperature Dependence of the Luminescence Bands of GaN Films Grown by Close Space Sublimation
Co-authors: Victor-Tapio Rangel-Kuoppa, Thomas Plach, Luis A. Hernández-Hernández, Francisco De Moure-Flores, Jose G. Quiñones-Galván, Enrique Campos-Gonzalez, Jose G. Quiñones-Galván, Miguel Meléndez-Lira

[O8] Luis A. Hernández-Hernández 
Optical & Structural Properties of GaN Grown by Closed-Space Vapor Transport
Co-authors: Jorge R. Aguilar-Hernández, Francisco de Moure-Flores, Rogelio Mendoza-Pérez, Gerardo S. Contreras-Puente, Osvaldo de Melo, Guillermo Santana, Máximo López-López

[O9] Luis A. Hernández-Hernández 
Enhancement of Structural, Optical & Electrical Properties through Post-Annealing of N-Doped ZnO Thin Films Grown by Reactive Magnetron RF-Sputtering
Co-authors: Arturo Hernández-Hernández, Francisco de Moure-Flores, J. S. Arias-Cerón, José G. Quiñones-Galván, Jorge R. Aguilar-Hernández, Gerardo S. Contreras-Puente, Miguel Meléndez-Lira

[O10] Justin Hurley
Determination of Defect Density in Thin-Film Amorphous Hydrogenated Boron Carbide Using Spectroscopic Photoconductivity Methods
Co-authors: Christopher Keck, Bradley Nordell, Thuong Nguyen, Anthony Caruso, Michelle Paquette

[P1] SM Islam
Pushing the Limits for Deep UV Emission from GaN/AlN Quantum Structures
Co-authors: Vladimir Protasenko, Huili (Grace) Xing, Debdeep Jena, Jai Verma

[P2] Edgaras Jelmakas
Growth of GaN Epilayer Using Femtosecond Laser Micromachining & ELO
Co-authors: Arunas Kadys, Samuel Margueron, Gediminas Raciukaitis, Rolandas Tomasiunas

[P3] Gabriel Juarez
Antimony Doping in Zinc Oxide (001) Single Crystal
Co-authors: Javier Martinez, Ramon Peña, Primavera López, Jorge I Contreras, Joel Diaz

[P4] Gil-Ho Kim
Temporal Behavior & Many-Body Effect on the Energy Relaxation of Photo-Generated Multi-Component Carriers in Wurtzite GaN
Co-authors: Inyeal Lee, Hye-Jung Kim, Do-kyun Kim, Gil-Ho Kim, Kyung Soo Yi

[P5] Hanchul Kim

Absolute Surface Energies of Low-Index Surfaces of Hexagonal CdS
Co-authors: Eun-Ha Shin, Yong-Sung Kim

[P6] Suk-Min Ko
Asymmetric Photonic Diode Behaviour via Huge Energy Bandgap Gradient in Tapered GaN/InGaN Core-Shell Nanorod
Co-authors: Su-Hyun Gong, Yong-Hoon Cho

[P7] Christian Kranert
Raman Scattering in (Ga,In,Al)2O3 Thin Films
Co-authors: Jörg Lenzner, Holger von Wenckstern, Rüdiger Schmidt-Grund, Marius Grundmann

[P8] Jacek A. Majewski
Physico-Chemistry of Heteropolar SiC/nitride Junctions
Co-author: Malgorzata Sznajder

[P9] Freddy Marcillo
Magnetism & Electronic Properties of SnO2 Containing Point Defects
Co-authors: Patricio Puchaicela, Alexander Chamba, Arvids Stashans

[P10] Tsukasa Nakamura
Thermally Stimulated Current Studies on Proton Irradiation Induced Defects in GaN
Co-authors: Kazuma Kamioka, Kazuo Kuriyama, Kazumasa Kushida

[Q1] Marco Piccardo
Conduction Band Structure of Wurtzite GaN Studied by Near-Band-Gap Photoemission Spectroscopy 
Co-authors: Lucio Martinelli, Justin Iveland, James Speck, Claude Weisbuch, Jacques Peretti

[Q2] Yusaku Takeuchi
Optical Band Gap & Bonding Character of Li5SiN3
Co-authors: Taiki Yamashita, Kazuo Kuriyama, Kazumasa Kushida

[Q3] Ning Tang
Enhancement of g* Factors in the Quantum Point Contacts Fabricated in AlGaN/GaN Heterostructures
Co-authors: Fangchao Lu, Shaoyun Huang, Fujun Xu, Weikun Ge, Bo Shen

[Q4] Koon Hoo Teo
Quantum Mechanical Simulation of Trap Lifetime in AlGaN/GaN HEMTs 
Co-authors: Qun Gao, Andrew Knyazev

[Q5] Jing Xu
Exciton & Defected-Related Emissions in ZnSe Longitudinal Twinning Nanowires
Co-authors: Chunrui Wang, Binhe Wu, Xiaofeng Xu, Xiaoshuang Chen, Hongseok Oh, Hyeonjun Baek, Gyu-Chul Yi

[Q6] Yoichi Yamada
Inelastic Exciton & Biexciton Scattering in AlGaN-Based Quantum Wells
Co-authors: Yuya Hayakawa, Tomonori Fukuno, Katsuto Nakamura, Hideto Miyake, Kazumasa Hiramatsu 

Thursday August 14, 2014 17:00 - 19:00
Room EFG
 
Friday, August 15
 

07:30

Complimentary Coffee & Tea
Complimentary coffee and tea served outside Ballroom D. 

Friday August 15, 2014 07:30 - 09:30
Ballroom D – Outside

08:00

Registration & Information
Registration & Information is located just across the entrance of Ballroom D. This is where you check-in if you registered in advance or where you will register on site. This is also where you come if you need any assistance during the conference. We are here to help make your visit to Austin as pleasant and productive as possible.

Near Registration & Information, just outside Ballroom D, there will be six ICPS 2014 exhibitors on display:
attocube | Dr. Eberl MBE-Komponenten GmbH | IOP Publishing
Montana Instruments | Neaspec GmbH | SPECS Surface Nano Analysis GmbH

Click to view all conference Abstracts



Friday August 15, 2014 08:00 - 14:00
Ballroom D – Outside

08:30

Narrow-Gap Semiconductor III
Click here to view Abstracts

8:30-8:45

Oral: Sen Li
Supercurrent & Multiple Andreev Reflections in an MBE Grown InSb Nanowire Josephson Junction
Co-authors: Ning Kang, Philippe Caroff, Hongqi Xu

8:45-9:00
Oral: Franz Münzhuber
Exciton Decay Dynamics Controlled by Impurity Occupation in Mn-Doped GaAs
Co-authors: Björn Gieseking, Georgy V. Astakhov, Tobias Kießling, Laurens W. Molenkamp, Wolfgang Ossau, Vladimir Dyakonov

9:00-9:30
Invited: Sergey Krishtopenko
Many-Body Effects in Narrow-Gap 2D Systems
Co-authors: N/A

In the past years there has been growing interest in many-body effects in 2D systems with spin-orbit interaction (SOI), in which energy-momentum law exhibits strong nonparabolicity.

My report contains theoretical results on electron-electron (e-e) interaction effects in narrow-gap quantum wells (QWs). I will demonstrate how SOI and the mixing between $\Gamma_6$, $\Gamma_7$ and $\Gamma_8$ bands, which are conduction and valence bands in III-V QWs, affects exchange enhancement of quasiparticle g-factor [1,2] (first proposed by Ando and Uemura [3]), many-body renormalization of cyclotron (CR) [4,5] and electron spin resonance (ESR) [5,6] in n-type QWs based on narrow-gap semiconductors. The calculations performed for InAs/AlSb QWs will be compared with experimental data obtained by magnetotransport and THz magnetospectroscopy in these structures.

Exchange renormalization of quasiparticle g-factor and g-factor, extracted from ESR, in direct-band and band-inverted HgTe QWs will possible be discussed.

[1] S. S. Krishtopenko et al. // J. Phys.: Condens. Matter 23, 385601 (2011).
[2] S. S. Krishtopenko et al. // J. Phys.: Condens. Matter 24, 135601 (2012).
[3] T. Ando, Y. Uemura. // J. Phys. Soc. Jpn 37, 1044 (1974).
[4] S.S. Krishtopenko. // J. Phys.: Condens. Matter 25, 365602 (2013).
[5] S.S. Krishtopenko. // J. Phys.: Condens. Matter 25, 105601 (2013).
[6] S.S. Krishtopenko et al. // Phys. Rev. B 87, 155113 (2013).

9:30-9:45
Oral: Gustavo Dalpian
Magnetic & Electronic Properties of FeGa3
Co-authors: Jorge Osorio-Guillen

9:45-10:00
Yara Galvão Gobato
Magneto-Photoluminescence Studies of GaBiAs Layers
Co-authors: Anne Rose Hermanson Carvalho, Vanessa Orsi Gordo, Helder Vinicius Avanço Galeti, Marcio Peron Franco de Godoy, Robert Kudrawiec, O M Lemine, Mohamed Henini

10:00-10:15
Oral: Giti Khodaparast
Magneto-Optical Spectroscopy of Narrow Gap Ferromagnetic Semiconductors
Co-authors: Y. H. Matsuda, D. Saha, G. D. Sanders, C. J. Stanton, B. W. Wessels, X. Liu, J. Furdyna

10:15-10:30
Open
 

Session Chairs
JT

J.G. Tischler

Naval Research Laboratory

Speakers
SK

Sergey Krishtopenko

Postdoctoral Researcher, Institute for Physics of Microstructures, Russian Academy of Sciences


Friday August 15, 2014 08:30 - 10:30
Room 19B

08:30

Optical Properties of Heterostructures V
Click here to view Abstracts

8:30-9:00

Invited: Gaël Nardin
Multidimensional Coherent Spectroscopy of Semiconductor Nanostructures
Co-authors: Travis Autry, Galan Moody, Rohan Singh, Hebin Li, François Morier-Genoud, Kevin Silverman, Steven Cundiff

Multidimensional coherent spectroscopy (MDCS) is an extension of Four-Wave-Mixing (FWM) techniques, which enables the unfolding of one-dimensional spectra onto, e.g., absorption and emission energy axes. It is an ideal tool to visualize and investigate coupling mechanisms in semiconductor materials [1], and it enables the separation of homogeneous and inhomogeneous line widths of a resonance [2]. In this talk, two approaches are presented.

The first approach is a non-collinear technique, which relies on the directional selection of the radiated FWM signal. As an example, a study of coupling between InGaAs quantum wells is presented. It exemplifies the ability of MDCS to distinguish quantum coupling from polarization interferences. A unique collection of zero-, one- and two-quantum spectra reveals two contributions---coherent and incoherent---to the inter-well coupling. Excellent agreement with density matrix simulations allows us to attribute the origin of the coherent coupling signatures to many-body effects, in the form of a renormalization of two-exciton states [1]. This new perspective on the coupling mechanism in semiconductor QWs may help in understanding the role played by many-body effects in devices where the inter-well coupling is exploited, such as quantum cascade lasers.

The drawback of non-collinear techniques is that they rely on the conservation of momentum, and thus cannot be applied to study single or few nanostructures whose size are below the diffraction limit. We present a second approach, based on a collinear geometry and the detection of the FWM as a photocurrent signal. It relies on the individual acousto-optic modulation of four excitation pulses, and selection of the FWM signal in the frequency domain [3]. The technique can be used to realize MDCS of single sub-diffraction nanostructures, and is therefore adapted to the study of building blocks of optoelectronics devices, such as single quantum dots or carbon nanotubes in diode structures. The robustness of the detection scheme enables the detection of amplitude and phase of the non-linear signal without requiring active stabilization. We demonstrate the technique by recording two-dimensional spectra from quantum well excitons in a p-i-n diode.

[1] Nardin et al, Phys. Rev. Lett. 112, 046402 (2014).
[2] Singh et al, Phys. Rev. B, 88, 045304 (2013).
[3] Nardin et al, Optics Express, 21, 28617 (2013).

The work at JILA was primarily supported by the U.S. Department of Energy under Award No. DE-FG02- 02ER15346, as well NIST. G. N. acknowledges support by the Swiss National Science Foundation (SNSF).

9:00-9:15
Oral: Faina Esser
Spectroscopic Investigation in High Magnetic Fields of the Dilute Nitride GaAsN
Co-authors: Oleksiy Drachenko, Harald Schneider, Amalia Patané, Mark Hopkinson, Manfred Helm

9:15-9:30
Oral: Scott Dufferwiel
Strong Exciton-Photon Coupling in Open Microcavities
Co-authors: Francois Fras, Aurelien Trichet, Feng Li, Laurynas Giriunas, Maxim N. Makhonin, Paul M. Walker, Luke R. Wilson, Jason M. Smith, Dimitrii N. Krizhanovskii, Maurice S. Skolnick

9:30-9:45
Oral: Savvas Germanis
Stark Effect on the Emission of a Single Piezoelectric InAs Quantum Dot at Liquid Nitrogen Temperature
Co-authors: Charalambos Katsidis, Antonis Stavrinidis, Simeon Tsintzos, George Constantinidis, Zacharias Hatzopoulos, Nikos Pelekanos

9:45-10:00
Oral: Alex Hayat
Dynamic StarkEeffect in Strongly Coupled Microcavity Exciton Polaritons
Co-authors: Christoph Lange, Lee Rozema, Ardavan Darabi, Henry van Driel, Aephraim Steinberg, Bryan Nelsen, David Snoke, Loren Pfeiffer, Kenneth West

10:00-10:15
Oral: Lily Yang
Narrow Emission Linewidths from Site-Controlled Self Assembled GaAs Quantum Dots
Co-authors: Michael Yakes, Allan Bracker, Timothy Sweeney, Peter Brereton, Mijin Kim, Chulsoo Kim, Patrick Vora, Doewon Park, Samuel Carter, Daniel Gammon

10:15-10:30
Oral: Ping Yu
Effect of Vertical & Lateral Coupling on Optical Properties of InGaAs Quantum Dots 
Co-authors: Meera Chandrasekhar, H.R. Chandrasekhar 

Session Chairs
AG

Alejandro González-Tudela

Max Planck Institute of Quantum Optics

Speakers
GN

Gaël Nardin

University of Colorado & NIST
Gael Nardin completed his PhD thesis at EPFL, at the Laboratory of Quantum Optoelectronics. He developed and used time-resolved interferometric imaging techniques to study the dynamics of exciton polaritons in semiconductor microcavities. He is now a post-doctoral research associate at JILA, implementing a novel concept of coherent multi-dimensional spectroscopy to study low-dimensional semiconductor nanostructures.


Friday August 15, 2014 08:30 - 10:30
Room 16A

08:30

Quantum Hall Effects IV

Click here to view Abstracts

8:30-8:45

Oral: Stephan Baer
Measurements of Quasi-Particle Tunneling in the Second Landau Level
Co-authors: Clemens Rössler, Thomas Ihn, Klaus Ensslin, Christian Reichl, Werner Wegscheider

8:45-9:00
Oral: Lina Bockhorn
Negative Magnetoresistance Induced by Rare Strong Scatterers
Co-authors: Igor V. Gornyi, Dieter Schuh, Christian Reichl, Werner Wegscheider, Rolf J. Haug

9:00-9:30
Oral: Milan Orlita
Massless Fermions in 2D & 3D: Infrared Magneto-Spectroscopy Studies
Co-authors: N/A 

Solid-state physics and quantum electrodynamics, with its relativistic (massless) particles, meet in steadily expanding class of materials. Those include, 1D carbon nanotubes, 2D graphene or topological-insulator surfaces, and most recently, the systems with 3D conical dispersion - with Weyl, Dirac or Kane fermions. In this talk, I will review how the linear dispersion impacts the (magneto-) optical properties of these systems.

We focus on two representative materials: a 2D graphene and bulk HgCdTe which displays the 3D conical dispersion when tuned to the point of the semiconductor-to-semimetal transition. We show that it is the number of dimensions, which defines the (joint) density of states, and in consequence, the simple physical quantities such as absorption of light - dispersionless in graphene but displaying a linear-in-photon-energy dependence in HgCdTe. In magnetic field, the optical response is determined by by electronic excitations between discrete or dispersion Landau levels (in 2D or 3D), both, however, with a typical for relativistic particles, square root dependence on the magnetic-field. Further relativistic effects may appear, depending on the strength of spin-orbit coupling. Spin-related effects are rather absent in the optical response of graphene which exhibits a weak spin-orbit coupling. Instead, we observe a pronounced spin splitting of levels in HgCdTe, which follows the square-root-magnetic-field dependence - a well-established signature of relativistic particles.

9:30-9:45
Oral: Masayuki Hashisaka
Fractional Charge Tunneling through a Local Fractional Quantum Hall Region
Co-authors: Tomoaki Ota, Koji Muraki, Toshimasa Fujisawa

9:45-10:00
Oral: Ramesh Mani
Size Dependent Giant Magnetoresistance in Millimeter-Sized GaAs/AlGaAs Devices
Co-authors: Annika Kriisa, Werner Wegscheider

10:00-10:15
Oral: Stephan Smolka
Cavity Quantum Electrodynamics as a Sensitive Probe of Many-Body Physics in Two Dimensional Electron Gases 
Co-authors: Wolf Wüster, Florian Haupt, Stefan Faelt, Werner Wegscheider, Atac Imamoglu 

10:15-10:30
Open 

Session Chairs
Speakers
MO

Milan Orlita

Laboratoire National des Champs Magnétiques Intenses, CNRS
Dr. Milan Orlita received his B.S. and Ph.D. (2006) from the Charles University in Prague, Czech Republic. Currently, he is a postdoctoral research fellow at Laboratoire National des Champs Magnetiques Intenses, CNRS, Grenoble, France. He is also affiliated with the Academy of Sciences of the Czech Republic. He has published extensively on optical measurements of solid-state systems, especially the graphene layers in recent years.


Friday August 15, 2014 08:30 - 10:30
Room 18AB

08:30

Topological Insulators IV

Click here to view Abstracts

8:30-9:00
Invited: Nuh Gedik
Observation of Floquet-Bloch States on the Surface of a Topological Insulator 
Co-authors: N/A

9:00-9:15
Oral: Kathrin-Maria Dantscher
Terahertz radiation induced photogalvanic effect and photoconductivity in HgTe based heterostructures
Co-authors: Christina Zoth, Patricia Vierling, Philipp Faltermeier, Peter Olbrich, Sergey Danilov, Grigory Budkin, Dmitri Kvon, Dimitriy Kozlov, Nikolay Mikhailov, Sergey Dvoretsky, Sergey Tarasenko, Mikhail Glazov, Marina Semina, Leonid Golub, Vasily Bel'kov, Sergey Ganichev

9:15-9:30
Oral: Gennady Gusev
The Resistance of 2D Topological Insulator in the Absence of the Quantized Transport
Co-authors: Ze Don Kvon, Eugene Olshanetsky, Alexander Levin, Yuriy Krupko, Jean-Claude Portal, Nikolay Mikhailov, Sergey Dvoretsky

9:30-9:45
Oral: Dieter Weiss
Strained HgTe: A high mobility 3D topological insulator
Co-authors: Ze Don Kvon, Dieter Weiss, Nikolay Mikhailov, Sergey Dvoretskiy

9:45-10:00
Oral: Jifa Tian
Spin Helical Transport in 3D Topological Insulators from Topological Surface State & Rashba 2D Electron Gases
Co-authors: Ireneusz Miotkowski, Yong Chen

10:00-10:15
Oral: Akiko Ueda
Aharonov-Bohm interferometry coupled to a BDI class topological superconductor
Co-author: Takehito Yokoyama

10:15-10:30
Open 


Session Chairs
TS

Tomasz Story

Institute of Physics PAS
Prof. Tomasz Story is Head of Semiconductor Physics Department of Institute of Physics of Polish Academy of Sciences in Warsaw (Poland). His research activities cover: carrier-induced ferromagnetism in semiconductors, thermoelectric energy conversion in narrow-gap semiconductors, and topological crystalline insulators.

Speakers
NG

Nuh Gedik

Associate Professor, Massachusetts Institute of Technology
Professor Gedik's research centers on developing and using advanced optical techniques for investigating ultrafast processes in solids, nanostructures and interfacial molecular assemblies. Typical timescale for these events are femtoseconds (billionth of a millionth of a second), and typical length scales are angstroms (tenth of a billionth of a meter). In order to resolve these fast processes, ultrafast laser pulses with femtosecond durations... Read More →


Friday August 15, 2014 08:30 - 10:30
Room 19A

08:30

Two Dimensional Systems Beyond Graphene III

Click here to view Abstracts

8:30-8:45

Oral: Adam Babinski
Transverse Acoustic Phonons in the Resonance Raman Scattering in Modlybdenum Disulfide
Co-authors: Magda Grzeszczyk, Przemyslaw Leszczynski, Clement Faugeras, Aurelien Nicolet, Andrzej Wysmolek, Marek Potemski, Adam Babinski

8:45-9:00
Oral: Santosh K.C.
Intrinsic Defects, Surface Oxidation, & Defect Passivation on Monolayer of MoS2
Co-authors: Roberto Longo, Robert M. Wallace, Kyeongjae Cho

9:00-9:30
Invited: Debdeep Jena
Two-Dimensional Semiconductors Beyond Graphene

Certain novel aspects of the electronic bandstructure and the charge-transport properties of 2D semiconductor crystals are the drivers for novel electronic device ideas in semiconductor physics. In my presentation, I will give an introduction to these aspects of transport properties and carrier dynamics in 2D crystals. Both low-field 'linear' transport and high-field transport with strong electron-phonon interactions will be discussed. Then, novel devices that exploit the unique features of 2D semiconductors will be described, and experimental progress towards their realization will be presented. The talk will make an attempt to connect the physics of 2D semiconductors to realistic near-term and future applications.

9:30-9:45
Oral: Paulina Plochoka
Optical Manipulation of the Exciton Charge State in Single Layer Tungsten Disulfide (WS2)

Co-authors: Anatolie Mitioglu, Joanna Jadczak, Walter Escoffier, Geert Rikken, Leonid Kulyuk, Duncan Maude

9:45-10:00
Oral: Akshay Singh
Coherent Electronic Coupling in Atomically Thin Transition Metal Dichalcogenides
Co-authors: Galan Moody, Sanfeng Wu, Yanwen Wu, Nirmal Ghimire, Jiaqiang Yan, David Mandrus, Xiadong Xu, Xiaoqin Li

10:00-10:15
Oral: Ha Jun Sung
Electronic Structure & Valley Polarization of Monolayer & Bilayer MoS2 on SiO2
Co-authors: Duk-Hyun Choe, K. J. Chang 

10:15-10:30
Open 


Session Chairs
CK

Chih-Kang (Ken) Shih

The University of Texas at Austin

Speakers
DJ

Debdeep Jena

Professor, College of Engineering, University of Notre Dame
Debdeep Jena received the B. Tech. degree with a major in Electrical Engineering and a minor in Physics from the Indian Institute of Technology (IIT) Kanpur in 1998, and the Ph.D. degree in Electrical and Computer Engineering at the University of California, Santa Barbara (UCSB) in 2003. He joined the faculty of the department of Electrical Engineering at the University of Notre Dame in 2003. His research and teaching interests are in the MBE... Read More →


Friday August 15, 2014 08:30 - 10:30
Room 18CD

10:30

Break
Friday August 15, 2014 10:30 - 11:00
Assorted

11:00

Carbon: Nanotubes & Graphene V
Click here to view Abstracts

11:00-11:30

Invited: Walter A. de Heer
Ballistic Transport in Graphene Nanoribbons
Co-authors: John Hankinson, Claire Berger, Walter A. de Heer

Graphene nanoribbons are essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about 10 nanometers between scattering events, resulting in minimum sheet resistances of about 1 kW  In contrast 40 nm wide graphene nanoribbons that are epitaxially grown on silicon carbide are single channel room temperature ballistic conductors on greater than 10 µm length scale, similarly to metallic carbon nanotubes. This is equivalent to sheet resistances below 1W surpassing theoretical predictions for perfect graphene by at least an order of magnitude. In neutral graphene ribbons, we show that transport is dominated by two modes. One is ballistic and temperature independent; the other is thermally activated. Transport is protected from back-scattering, possibly reflecting ground state properties of neutral graphene. At room temperature the resistance of both modes abruptly increases non-linearly with increasing length, one at a length of 16 µm and the other at 160 nm. Besides their importance for fundamental science, since epitaxial graphene nanoribbons are readily produced by the thousands, their room temperature ballistic transport properties can be used in advanced nanoelectronics as well. 

11:30-11:45

Oral: Stephan Engels
On the Limits of Electron Transport in High-Mobility Bilayer Graphene
Co-authors: Bernat Terrés, Alexander Epping, Tymofiy Khodkov, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer

11:45-12:00
Oral: Farhad Karimi
Optical Response of Zigzag Graphene Nanoribbons
Co-author: Irena Knezevic

12:00-12:15
Oral: Nancy Sandler
Conductance & LDOS of Graphene Ribbons with Centro-Symmetric out of Plane Deformations
Co-authors: Ramon Carrillo, Martin Schneider, Daiara Faria, Silvia Viola Kusminskiy, Andrea Latge, Francisco Mireles

12:15-12:30
Oral: Mandhour Lassaad
Minimal Conductivity in Ballistic Bilayer Graphene with a Twist
Co-authors: Sihem Jaziri, Ameni Daboussi 

12:30-12:45
Oral: Akira Satou
Effects of Carrier-Carrier Scattering on Graphene Terahertz/Photonic Devices
Co-authors: Victor Ryzhii, Vladimir Mitin, Fedir Vasko, Taiichi Otsuji

12:45-13:00
Oral: Chris Corbet
Ultrathin Gate Dielectrics Created from Oxidized Titanium for Graphene Field Effect Transistors

Session Chairs
LF

Leonard Franklin Register

The University of Texas at Austin

Speakers
WA

Walter A. de Heer

Regents' Professor, School of Physics, Georgia Tech


Friday August 15, 2014 11:00 - 13:00
Room 18AB

11:00

Electron Devices & Applications VI
Click here to view Abstracts

11:00-11:30

Invited: Emanuel Tutuc
Electron Interaction & Tunneling in Graphene-Based Heterostructures
Co-authors: Kayoung Lee, Stefano Larentis, Babak Fallahazad

Vertical heterostructures consisting of atomic layers separated by insulators can enable novel tunneling devices, and also open a window to explore electron interaction effect in these materials, otherwise not accessible in single layer devices.  In this presentation we discuss two examples of vertical heterostructures of atomic layer materials, where electron interaction plays a key role.

We examine the electron transport in graphene-MoS2 heterostructures, fabricated using a layer-by-layer transfer approach.  Four point conductivity measurements of the heterostructure as a function of back-gate bias show ambipolar characteristics, with a clear conductivity saturation on the electron branch.  Magnetotransport measurements reveal that the conductivity saturation marks the onset of MoS2 being populated with electrons.  Most surprisingly, once the MoS2 becomes populated with electrons the carrier density in graphene decreases with increasing gate bias, a finding indicating that the MoS2 electrons have a negative quantum capacitance [1].

A second type of heterostructure examined here are double bilayer heterostructures, consisting of two bilayer graphene flakes separated by hexagonal boron-nitride. Using the top layer as a resistively detected Kelvin probe we map the chemical potential of the bottom bilayer graphene as a function of electron density, perpendicular magnetic field, and transverse electric field.  At zero magnetic field the chemical potential reveals a strongly non-linear dependence on density, with an electric field induced energy gap at charge neutrality.  The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level energies, and the broken symmetry quantum Hall state gaps at high magnetic fields [2]. The interlayer transport shows a gate tunable negative differential resistance suggestive of momentum conserving tunneling.

[1] S. Larentis, et al., “Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures”,Nano Letters14, 2039 (2014).
[2] K. Lee, et al., “Chemical potential and quantum Hall ferromagnetism in bilayer graphene mapped using double bilayer heterostructures”, Science 345, 58 (2014).

11:30-1145
Oral: Andrew O'Hara
Theoretical Investigation of the Hafnia-Hafnium Interface in RRAM Devices

11:45-12:00
Oral: Antonio Claudio Padilha
A Study of TiO Magneli Phases Using Density Functional Theory
Co-authors: Alexandre Reily Rocha, Jorge Osorio-Guillén, Gustavo Dalpian

12:00-12:15
Oral: Roderick Melnik
Coupled Dynamic Effects in Shape Memory Alloy Nanostructures
Co-authors: Rakesh Dhote

12:15-12:30
Oral: Matthew Grayson
p x n Transverse Thermoelectrics: A Novel Paradigm for Thermoelectric Materials
Co-authors: Chuanle Zhou, S. Birner, Yang Tang, Karen Heinselman, Boya Cui

12:30-12:45
Oral: Stefano Roddaro
Achieving Millivolt Range Thermovoltages from a Single Nanowire
Co-authors: Daniele Ercolani, Mian Akif Safeen, Francesco Rossella, Vincenzo Piazza, Francesco Giazotto, Lucia Sorba, Fabio Beltram 

12:45-13:00
Open 

Session Chairs
DJ

Debdeep Jena

Professor, College of Engineering, University of Notre Dame
Debdeep Jena received the B. Tech. degree with a major in Electrical Engineering and a minor in Physics from the Indian Institute of Technology (IIT) Kanpur in 1998, and the Ph.D. degree in Electrical and Computer Engineering at the University of California, Santa Barbara (UCSB) in 2003. He joined the faculty of the department of Electrical Engineering at the University of Notre Dame in 2003. His research and teaching interests are in the MBE... Read More →

Speakers
ET

Emanuel Tutuc

The University of Texas at Austin


Friday August 15, 2014 11:00 - 13:00
Room 18CD

11:00

Optical Properties of Heterostructures VI

Click here to view Abstracts

11:00-11:15

Oral: Hunter B. Banks
High-order Sideband Generation from Antenna-enhanced Intense Terahertz Electric Fields
Co-authors: Andrea Hofmann, Mark S. Sherwin

11:15-11:30
Oral: Joe Tischler
Electron-Hole Exchange Energy in PbS Y PbSe Nanocrystals
Co-authors: E.E. Foos, D. Placencia, W. Yoon, J.E. Boercker

11:30-11:45
Oral: Marco Felici
Spatially Selective Hydrogenation as a Tool to Control the Polarization Properties of Dilute-Nitride Semiconductors
Co-authors: Simone Birindelli, Rinaldo Trotta, Antonio Polimeni, Annamaria Gerardino, Andrea Notargiacomo, Silvia Rubini, Faustino Martelli, Mario Capizzi

11:45-12:00
Oral: Florian Hackl
Purcell Enhancement Variations within the Unit Cell of a Si Photonic Crystal
Co-authors: Elisabeth Lausecker, Reyhaneh Jannesari, Martin Glaser, Friedrich Schaeffler, Thomas Fromherz

12:00-12:15
Oral: Maksym Sich
Dynamics of 2D Polariton Soliton Patterns in Semiconductor Microcavities
Co-authors: Jasmin Chana, Francois Fras, Dmitry Krizhanovskii, Emiliano Cancellieri, Andrey Gorbach, Robin Hartley, Dmitry Skryabin, Edgar Cerda-Mendez, Klaus Biermann, Rudolf Hey, Paulo Santos, Maurice Skolnick

12:15-12:30
Oral: Le Duc Anh
Reddish-Yellow Visible-Light Electroluminescence in Manganese-Doped Silicon Light-Emitting Diodes
Co-authors: Pham Nam Hai, Daiki Maruo, Masaaki Tanaka

12:30-12:45
Oral: Chris Phillips
Ultra-Efficient "Quantum Ratchet" Solar Cells from Semiconductor Nanostructures
Co-authors: Megumi Yoshida, Hemmel Amrania, Nicholas P Hylton, Andreas Pusch, Anthony Vaquero, Oliver Curtin, Ortwin Hess, Edward Yoxall, Nicholas Ekins-Daukes, Daniel Farrell 

12:45-13:00
Open 


Session Chairs
NG

Nuh Gedik

Associate Professor, Massachusetts Institute of Technology
Professor Gedik's research centers on developing and using advanced optical techniques for investigating ultrafast processes in solids, nanostructures and interfacial molecular assemblies. Typical timescale for these events are femtoseconds (billionth of a millionth of a second), and typical length scales are angstroms (tenth of a billionth of a meter). In order to resolve these fast processes, ultrafast laser pulses with femtosecond durations... Read More →

Friday August 15, 2014 11:00 - 13:00
Room 16A

11:00

Wide Band Gap IV

Click here to view Abstracts

11:00-11:15

Oral: A.R. Goni
Dependence on Pressure of the Refractive Indices of Wurtzite ZnO, GaN & AlN
Co-authors: F. Käss, J.S. Reparaz, M.I. Alonso, M. Garriga, G. Callsen, M. R. Wagner, A. Hoffmann, Z. Sitar

11:15-11:30
Oral: David Mora-Fonz
Why Are Polar Surfaces of ZnO Stable?
Co-author: Richard Catlow

11:30-11:45
Oral: Shantanu Saha
Photoluminescence Study of Zn0.85Mg0.15O Thin Films Implanted with Phosphorus Ions Using Plasma Immersion Ion Implantation
Co-authors: Saurabh Nagar, Subhananda Chakrabarti

11:45-12:00
Oral: Gwenole Jacopin
Exciton Drift under Uniform Strain Gradient in Bent ZnO Microwires
Co-authors: Xuewen Fu, Mehran Shahmohammadi, Ren Liu, Malik Benameur, Jean-Daniel Ganière, Ji Feng, Wanlin Guo, Zhimin Liao, Benoît Deveaud, Dapeng Yu

12:00-12:30
Invited: Matthew McCluskey
Acceptor Mysteries in Zinc Oxide 
Co-authors: Caleb Corolewski, Marianne Tarun, Samuel Teklemichael 

Zinc oxide (ZnO) is a semiconductor that emits bright UV light, with little wasted heat. This intrinsic feature makes it a promising material for energy-efficient white lighting, nano-lasers, and other optical applications. For devices to be competitive, however, it is necessary to develop reliable p-type doping. Although substitutional nitrogen has been considered as a potential p-type dopant for ZnO, recent theoretical and experimental work suggests that nitrogen is a deep acceptor and will not lead to p-type conductivity. This talk will highlight some experiments on acceptor doping of ZnO. In nitrogen-doped samples, a red photoluminescence (PL) band is correlated with the presence of deep nitrogen acceptors. PL excitation (PLE) measurements show an absorption threshold of 2.26 eV, in good agreement with theory. The results of these studies seem to rule out group-V elements as shallow acceptors in ZnO, contradicting numerous reports in the literature. It is possible that surface and interface conduction could be responsible for some of those observations. Optical studies on ZnO nanocrystals show some intriguing leads. At liquid-helium temperatures, a series of sharp IR absorption peaks arise from an unknown acceptor impurity. The data are consistent with a hydrogenic acceptor 0.46 eV above the valence band edge. While this binding energy is still too deep for many practical applications, it represents a significant improvement over the ~1.3 eV binding energy for nitrogen acceptors.

12:30-12:45
Oral: Michael Reshchikov
Thermal Quenching of Photoluminescence in III-V & II-IV Semiconductors

12:45-13:00
Open 

Session Chairs
SW

Su-Huai Wei

National Renewable Energy Laboratory

Speakers
MM

Matthew McCluskey

Westinghouse Professor & Chair of the Department of Physics & Astronomy, Washington State University
Matthew McCluskey is Westinghouse Professor and Chair of the Department of Physics and Astronomy, Washington State University (WSU). He received a Physics B.Sc. from MIT in 1991 and Ph.D. from the University of California, Berkeley in 1997. He was a postdoctoral researcher at the Xerox Palo Alto Research Center (PARC) from 1997 to 1998. Dr. McCluskey joined WSU as an assistant professor in 1998. His research interests include semiconductors... Read More →


Friday August 15, 2014 11:00 - 13:00
Room 17B

13:00

Lunch On Your Own
There are many restaurants & amenities within just a few blocks of the Austin Convention Center.
View this map to see the nearby options

Friday August 15, 2014 13:00 - 14:30
Assorted

14:30

Plenary IV
14:30-15:10
Plenary: Christopher Palmstrom
Integration of Heusler Compounds with III-V Semiconductors: Semiconductor Spintronics & More

Heusler alloys are analogous to the Perovskite complex oxides with over 1000 possible combinations of elements. Their properties depend on the number of valence electrons per formula unit and have been predicted to be semiconductors, metals, ferromagnets, antiferromagnets, half metals, superconductors and topological insulators. Similar to compound semiconductors, the band structure and lattice parameters of Heusler alloys can also be tuned through alloying but over a much larger range of properties. The half-Heusler compounds can be thought of as a zincblende lattice with additional atoms in the octahedral sites. The lattice parameters and FCC crystal structure make them excellent candidates for integrating with conventional III-V semiconductors. Magnetic tunnel junctions using Heusler alloys that are predicted to be half metals have shown record tunneling magnetoresistance. We have demonstrated record high spin accumulation at Heusler/GaAs interfaces in lateral spin transport device structures and also the growth of semiconducting half-Heusler alloys on III-V semiconductors with comparable electron mobilities to Si. This presentation will emphasize Heusler compound integration on III-V semiconductors by molecular beam epitaxy and the tuning of their properties. 

15:10-15:50
Plenary: Qi-Kun Xue
Quantized Anomalous Hall Effect in Magnetically Doped Topological Insulators

Anomalous Hall effect (AHE) was discovered by Edwin Hall in 1881. In this talk, we report the experimental observation of the quantized version of AHE, the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3 magnetic topological insulator on SrTiO3 substrate prepared by molecular beam epitaxy. The Cr0.15(Bi0.1Sb0.9)1.85Te3 films with a thickness of 5 nm exhibits ferromagnetic ordering at 15K. It was found that at zero magnetic field and 30 mK, the gate-tuned anomalous Hall resistance of the film is fully quantized at h/e2 accompanied by a significant drop of the longitudinal resistance. The longitudinal resistance vanishes under a strong magnetic field whereas the Hall resistance remains at the quantized value. The realization of the QAH effect paves a way for developing low-power-consumption electronics and spintronics.  



Session Chairs
AA

Alexander A. Demkov

The University of Texas at Austin

Speakers
CP

Christopher Palmstrom

Professor, Department of Electrical & Computer Engineering, UC Santa Barbara
Professor Chris Palmstrom, one of the world's leading researchers of electronic materials, joined the ECE faculty at UCSB in the Fall of '07. Born in Norway, Palmstrom received his PhD in Electrical and Electronic Engineering from the University of Leeds (England) in 1979. After five years of research on semiconductor materials and contact techonologies at Cornell, he joined Bellcore in 1985. There, he did groundbreaking research on semiconductor... Read More →
QX

Qi-Kun Xue

Professor of Physics & Vice President for Research, Tsinghua University
Prof. Qi-Kun Xue graduated with a major in optics from Shandong University in 1984. He received his Ph.D in condensed matter physics from Institute of Physics, The Chinese Academy of Sciences (CAS) in 1994. From 1994 to 2000, he worked as a research associate with Prof. Toshio Sakurai at Institute for Materials Research, Tohoku University, Japan. From 1996 to 1997, he worked as a visiting assistant professor at Prof. D. E. Aspnes' group at... Read More →


Friday August 15, 2014 14:30 - 15:50
Ballroom D

15:50

Closing
Friday August 15, 2014 15:50 - 16:20
Ballroom D